Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDC6333C
30V N & P-Channel PowerTrench MOSFETs
General Description
Features
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
• Q1
2.5 A, 30V.
RDS(ON) = 95 mΩ @ VGS = 10 V
RDS(ON) = 150 mΩ @ VGS = 4.5 V
• Q2
–2.0 A, 30V.
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 220 mΩ @ VGS = –4.5 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
Applications
• SuperSOT –6 package: small footprint (72% smaller than
• DC/DC converter
• Load switch
• LCD display inverter
SO-8); low profile (1mm thick).
D2
Q2(P)
S1
D1
G2
SuperSOT
TM
-6
Pin 1
4
3
5
2
S2
G1
1
6
Q1(N)
SuperSOT™-6
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Q1
Q2
Units
VDSS
Drain-Source Voltage
Parameter
30
–30
V
VGSS
Gate-Source Voltage
±16
±25
V
ID
Drain Current
2.5
–2.0
A
8
–8
– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
0.96
(Note 1b)
0.9
(Note 1c)
0.7
W
–55 to +150
°C
(Note 1a)
130
°C/W
(Note 1)
60
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.333
FDC6333C
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
FDC6333C
October 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID(on)
gFS
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA,Ref. to 25°C
ID = –250 µA,Ref. to 25°C
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
VGS = –16 V, VDS = 0 V
VGS = –25 V, VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
–30
V
27
–22
mV/°C
1
–1
100
100
–100
–100
µA
V
nA
nA
(Note 2)
Q1
VDS = VGS, ID = 250 µA
1
1.8
3
Q2
VDS = VGS, ID = –250 µA
–1
–1.8
–3
Gate Threshold Voltage
Temperature Coefficient
Q1
ID = 250 µA,Ref. To 25°C
Q2
ID = –250 µA,Ref. to 25°C
Static Drain–Source
On–Resistance
Q1
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2.0 A
VGS = 10 V, ID = 2.5 A,TJ=125°C
Q2
VGS = –10 V, ID = –2.0 A
VGS =– 4.5 V, ID = –1.7 A
VGS = 10 V, ID= –2.0 A,TJ=125°C
Q1
VGS = 10 V,
Gate Threshold Voltage
On–State Drain Current
Forward Transconductance
VDS = 5 V
mV/°C
4
–4
73
90
106
95
142
149
95
150
148
mΩ
130
220
216
8
A
Q2
VGS = –10 V, VDS = –5 V
Q1
VDS = 5 V
ID = 2.5 A
7
Q2
VDS = –5 V
ID = –2.0A
3
Q1
VDS=15 V, V GS= 0 V, f=1.0MHz
282
Q2
VDS=–15 V, V GS= 0 V, f=1.0MHz
185
Q1
VDS=15 V, V GS= 0 V, f=1.0MHz
49
Q2
VDS=–15 V, V GS= 0 V, f=1.0MHz
56
VDS=15 V, V GS= 0 V, f=1.0MHz
20
Q2
VDS=–15 V, V GS= 0 V, f=1.0MHz
26
Q1
Q2
For Q1:
VDS =15 V,
VGS= 10 V,
4.5
9
4.5
9
–8
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Q1
Switching Characteristics
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
tf
Qg
Qgs
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Q1
Q1
Q2
Gate–Drain Charge
pF
For Q2:
VDS =–15 V,
VGS= –10 V,
I DS= 1 A
RGEN = 6 Ω
I DS= –1 A
RGEN = 6 Ω
6
12
ns
23
34
ns
11
20
1.5
3
Q2
2
4
Q1
Q2
Q1
Q1
Q2
For Q1:
VDS =15 V,
VGS= 10 V,
For Q2:
VDS =–15 V,
VGS= –10 V,
I DS= 2.5 A
RGEN = 6 Ω
I DS= –2.0 A
ns
13
19
Q1
Q2
Qgd
pF
(Note 2)
Q2
td(off)
pF
4.7
4.1
0.9
6.6
5.7
ns
nC
nC
0.8
0.6
nC
0.4
FDC6333C Rev C (W)
FDC6333C
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Q1
0.8
Q2
–0.8
Q1
VGS = 0 V, IS = 0.8 A
(Note 2)
0.8
1.2
Q2
VGS = 0 V, IS = 0.8 A
(Note 2)
0.8
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 130 °C/W when
mounted on a 0.125
2
in pad of 2 oz.
copper.
b) 140°/W when mounted
2
on a .004 in pad of 2 oz
copper
c) 180°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6333C Rev C (W)
FDC6333C
Electrical Characteristics
FDC6333C
Typical Characteristics: N-Channel
10
2
VGS = 10V
VGS = 3.0V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
3.5V
I D, DRAIN CURRENT (A)
8
6
3.0V
4
2
0
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
0
1
2
3
0
2
4
6
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.25
ID = 2.5A
VGS = 10V
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
ID = 1.25A
0.2
0.15
TA = 125 oC
0.1
TA = 25oC
0.05
0.6
-50
-25
0
25
50
75
100
125
2
150
4
o
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
VGS = 0V
o
TA =-55 C
8
25o C
I S, REVERSE DRAIN CURRENT (A)
VDS =5V
I D, DRAIN CURRENT (A)
8
125o C
6
4
2
0
10
TA = 125oC
1
25 oC
0.1
-55o C
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C Rev C (W)
FDC6333C
Typical Characteristics: N-Channel (continued)
400
VDS = 5V
ID = 2.5A
f = 1MHz
VGS = 0 V
10V
8
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
300
C ISS
200
100
COSS
CRSS
0
0
0
1
2
3
4
5
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
5
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
1
VGS = 10V
SINGLE PULSE
R θJA = 180oC/W
0.1
10µs
100µs
1ms
10ms
100ms
1s
DC
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
4
3
2
1
0
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6333C Rev C (W)
FDC6333C
Typical Characteristics: P-Channel
10
-6.0V
8
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
VGS = -10V
-4.5V
6
-4.0V
4
-3.5V
2
VGS = -3.5V
2.5
2
-4.0V
-4.5V
-5.0V
1.5
-6.0V
-10V
1
0.5
0
0
1
2
3
4
0
5
2
4
Figure 11. On-Region Characteristics.
10
0.4
I D = -2A
VGS =-10V
RDS(ON), ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
ID = -1A
0.3
TA = 125 oC
0.2
TA = 25o C
0.1
0
150
2
TJ , JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation
withTemperature.
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
VGS = 0V
25oC
o
TA = -55 C
-I S, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
4
125oC
3
2
1
0
1
TA = 125oC
0.1
25o C
0.01
-55oC
0.001
0.0001
1.5
2.5
3.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C Rev C (W)
FDC6333C
Typical Characteristics: P-Channel (continued)
300
ID = -2.0A
f = 1MHz
VGS = 0 V
-10V
VDS = -5V
250
8
-15V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
CISS
200
150
COSS
100
2
50
CRSS
0
0
0
1
2
3
4
5
0
5
Qg , GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
15
20
25
30
Figure 18. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
5
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
R θJA = 180oC/W
0.1
10µs
100µs
1ms
10ms
100ms
1s
DC
TA = 25oC
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
4
3
2
1
0
0.01
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
10
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 180°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDC6333C Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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