FDC637AN

FDC637AN FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Applications • • • DC/DC converter Load switch Battery Protection D D • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V • Fast switching speed. • Low gate charge (10.5nC typical). • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA = 25°C unless otherwise noted Parameter FDC637AN Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous 6.2 A Drain Current - Pulsed PD Power Dissipation for Single Operation TJ, T stg (Note 1a) 20 (Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .637 FDC637AN 7’’ 8mm 3000 units 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDC6FDC637AN/DD Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA 1.5 V On Characteristics 20 V 14 mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID =250µA,Referenced to 125°C -3 0.019 0.028 0.025 0.4 ID(on) On-State Drain Current VGS = 4.5 V,ID = 6.2 A VGS = 4.5 V,ID = 6.2 A,TJ=125°C VGS = 2.5 V, ID = 5.2 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6.2 A 0.82 mV/°C 0.024 0.041 0.032 10 Ω A 7.4 S 1125 pF 290 pF 145 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 9 18 ns 13 24 ns td(off) Turn-Off Delay Time 26 42 ns tf Turn-Off Fall Time 11 20 ns Qg Total Gate Charge 10.5 16 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 5 V, ID = 6.2 A, VGS = 4.5 V 1.5 nC 2.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.7 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 22 FDC637AN Electrical Characteristics FDC637AN Typical Characteristics 20 2.5 2.5V 3.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS= 4.5V 2.0V 12 8 4 1.5V 2 VGS= 2.0V 1.5 2.5V 3.0V 4.5V 1 0.5 0 0 0.4 0.8 1.2 1.6 0 2 5 Figure 1. On-Region Characteristics. 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID= 6.2A VGS= 4.5V 1.4 RDS(ON), ON RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 0.08 1.5 1.3 1.2 1.1 1 0.9 0.8 ID= 6.2A 0.06 0.04 o TJ= 125 C o 25 C 0.02 0.7 0 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 o o 25 C IS, REVERSE DRAIN CURRENT (A) TJ= -55 C VDS= 5V ID, DRAIN CURRENT (A) 10 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) o 125 C 15 10 5 VGS = 0 10 1 o TJ= 125 C o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 0 2.5 0.4 0.6 0.8 1 VSD, BODY DIODE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 1800 VDS = 5V ID = 6.2A f = 1MHz VGS = 0V 10V 15V 1500 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1200 Ciss 900 600 1 Coss 300 Crss 0 0 0 2 4 6 8 10 12 14 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics 5 100 SINGLE PULSE o RθJA = 156 C/W 100µs RDS(ON) LIMIT 10 4 POWER (W) 1ms 10ms 100ms 1s 1 DC VGS= 4.5V SINGLE PULSE 0.1 o RθJA= 156 C/W o TA = 25 C 3 2 1 o TA= 25 C 0.01 0 0.1 1 10 100 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) FDC637AN Typical Characteristics 0.5 D = 0.5 0.2 0.1 0.05 R θJA (t) = r(t) * R θJA R θJA = 156°C/W 0.2 0.1 P(pk) 0.05 t1 0.02 0.02 0.01 t2 TJ - TA = P * R θJA (t) 0.01 Duty Cycle, D = t 1 / t 2 Single Pulse 0.005 0.00001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com