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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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MOSFET – P-Channel,
POWERTRENCH
-20 V, -4 A, 100 mW
FDC642P-F085,
FDC642P-F085P
www.onsemi.com
Features
• Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A
• Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A
• Fast Switching Speed
• Low Gate Charge (6.9 nC Typical)
• High Performance Trench Technology for Extremely Low RDS(on)
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
Standard SO−8); Low Profile (1 mm Thick)
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
TSOT23 6−Lead
CASE 419BL
MARKING DIAGRAM
Applications
&E&Y
&.642&G
• Load Switch
• Battery Protection
• Power management
1
XXX
&E
&Y
&.
G
= Specific Device Code
= Space Designator
= Year of Production
= Pin One Identifier
= Pb−Free Package
PINOUT
S
4
3
G
D
5
2
D
D
6
1
D
SuperSOTTM−6
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
September, 2020 − Rev. 3
1
Publication Order Number:
FDC642P−F085/D
FDC642P−F085, FDC642P−F085P
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Units
VDSS
Drain to Source Voltage
−20
V
VGS
Gate to Source Voltage
±8
V
Drain Current
− Continuous (VGS = 4.5 V)
− Pulsed
−4
−20
EAS
Single Pulse Avalanche Energy (Note 1)
72
mJ
PD
Power Dissipation
1.2
W
−55 to +150
°C
ID
TJ, TSTG
Operating and Storage Temperature
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting TJ = 25°C, L = 14.1 mH, IAS = −3.2 A
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
°C/W
RθJC
Thermal Resistance, Junction to Case
30
RθJA
Thermal Resistance, Junction to Ambient, 1in2 Copper pad Area
103
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDC642P
FDC642P−F085
SSOT−6
7”
8 mm
3000 Units
FDC642P
FDC642P−F085P
SSOT−6
7”
8 mm
3000 Units
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2
FDC642P−F085, FDC642P−F085P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
−20
−
−
V
Zero Gate Voltage Drain Current
VDS = −16 V, VGS = 0 V
−
−
−1
μA
VDS = −16 V, VGS = 0 V, TA = 150°C
−
−
−250
VGS = ±8 V
−
−
±100
−0.4
−0.7
−1.5
V
mW
Gate to Source Leakage Current
nA
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −4 A
−
52.5
65
VGS = −2.5 V, ID = −3.2 A
−
75.3
100
VGS = 4.5 V, ID = −4 A, TJ = 125 °C
−
72.7
105
VDD = −5 V, ID = −4 A
−
10
−
S
VGS = 0 V, VDS = −10 V
f = 1 MHz
−
630
−
pF
−
160
−
pF
−
65
−
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
−
4.4
−
W
Qg(TOT)
Total Gate Charge at −4.5 V
VGS = 0 V to −4.5 V, VDD = −10 V, ID = −4 A
−
6.9
9.0
nC
Qgs
Gate to Source Gate Charge
−
1.2
−
nC
Qgd
Gate to Drain “Miller” Charge
VDD = −10 V
ID = −4 A
−
1.8
−
nC
VDD = −10 V, ID = −1 A,
VGS = −4.5 V, RGS = 6 W
−
−
23
ns
−
7.3
−
ns
Rise Time
−
5.5
−
ns
Turn−Off Delay Time
−
23.2
−
ns
Fall Time
−
9.6
−
ns
Turn−Off Time
−
−
53
ns
ISD = −1.3 A
−
−
−1.25
V
ISD = −0.65 A
−
−
−1.0
ISD = −1.3 A, dISD/dt = 100 A/ms
−
17
22
ns
−
5.6
7.3
nC
Rg
SWITCHING CHARACTERISTICS
ton
td(on)
tr
td(off)
tf
toff
Turn−On Time
Turn−On Delay Time
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDC642P−F085, FDC642P−F085P
POWER DISSIPATION MULTIPLIER
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE(oC)
150
TA, Case Temperature (°C)
Figure 1. Normalized Power Dissipation
vs. Ambient Temperature
Figure 2. Maximum Continuous Drain Current
vs. Ambient Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
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4
FDC642P−F085, FDC642P−F085P
TYPICAL CHARACTERISTICS continued)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On−Resistance Variation
vs. Gate to Source Voltage
Figure 10. Normalized Drain to Source On−Resistance
vs. Junction Temperature
www.onsemi.com
5
FDC642P−F085, FDC642P−F085P
TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted (continued)
Figure 11. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Capacitance vs. Drain to Source Voltage
Figure 14. Gate Charge vs. Gate to Source Voltage
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
SCALE 2:1
DATE 31 AUG 2020
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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1
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