FDD5690

FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge (23nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D G G S TO-252 Absolute Maximum Ratings Symbol S o T C =25 C unless otherwise noted Parameter Ratings Units V DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage V ID Maximum Drain Current (Note 1) ±20 30 (Note 1a) 9 Maximum Drain Current -Continuous -Pulsed 100 Maximum Power Dissipation @ T C = 25 o C PD T J, T stg A (Note 1) 50 T A = 25 o C (Note 1a) 3.2 T A = 25 o C (Note 1b) Operating and Storage Junction Temperature Range W 1.3 -55 to +150 °C Thermal Characteristics R θJC Thermal Resistance, Junction-to- Case (Note 1) 2.5 °C/W R θJA Thermal Resistance, Junction-to- Ambient (Note 1a) 40 °C/W (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5690 FDD5690 13’’ 16mm 2500 2002 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDD5690/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics W DSS IAR Single Pulse Drain-Source VDD = 30 V, ID = 30 A Avalanche Energy Maximum Drain-Source Avalanche Current BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20V, VDS = 0 V 100 µA nA VGS = -20 V, VDS = 0 V -100 nA IGSSR On Characteristics 90 30 60 mJ A V 57 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C -6 Static Drain-Source On-Resistance 0.023 0.032 0.026 ID(on) On-State Drain Current VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125°C VGS = 6 V, ID = 8 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 9 A 2 2.5 4 V mV/°C 0.027 0.048 0.032 25 Ω A 24 S 1110 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics VDS = 25 V, VGS = 0 V f = 1.0 MHz 150 pF 75 pF (Note 2) td(on) Turn-On Delay Time VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time 10 18 ns Qg Total Gate Charge 23 32 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge 10 VDS = 30 V, ID = 9 A VGS = 10 V, 18 ns 9 18 ns 24 39 ns 4 nC 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.75 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 2.3 A 1.2 V FDD5690 Electrical Characteristics FDD5690 Typical Characteristics 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 60 VGS = 10V 6.0V 50 5.0V 40 30 4.5V 20 4.0V 10 0 1.8 1.6 VGS = 4.5V 1.4 5.0V 1.2 1 0.8 0 1 2 3 5 4 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 2 ID = 15A ID = 9A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.06 o TA = 125 C 0.04 o 0.02 TA = 25 C 0 -50 -25 0 25 50 75 100 125 150 3 4 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 o VDS = 5V VGS = 0V TA = -55 C o 25 C 50 10 o o 125 C TA = 125 C 40 1 30 0.1 20 0.01 10 0.001 o 25 C o -55 C 0.0001 0 2 3 4 5 6 0 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.4 FDD5690 Typical Characteristics (continued) 2500 VGS, GATE-SOURCE VOLTAGE (V) 10 ID = 9A VDS = 10V f = 1MHz VGS = 0 V 20V 8 2000 CISS 30V 6 1500 4 1000 2 500 0 0 5 0 10 15 20 COSS CRSS 0 25 10 Qg, GATE CHARGE (nC) 30 40 SINGLE PULSE o RθJA = 96 C/W 10ms o 100ms TA = 25 C POWER (W) 1S 10S DC 40 20 VGS = 10V SINGLE PULSE 0.1 o RθJA = 96 C/W o TA = 25 C 0 0.01 0.1 1 10 0.1 0.01 100 1 10 100 1000 SINGLE PULSE TIME (SEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 1ms 1 60 60 100µs RDS(ON) LIMIT 10 50 Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 100 20 VDS, DRAIN TO SOURCE VOLTAGE (V) D = 0.5 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA = 96°C/W 0.1 0.05 0.01 0.01 0.02 P(pk) Single Pulse t1 0.001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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