FDD6635

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss R DS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Fast Switching capability to offer superior performance benefit in the applications. • RoHS compliant Applications • Inverter • Power Supplies D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS o TA=25 C unless otherwise noted Parameter Drain-Source Voltage Ratings Units 35 V 40 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS Gate-Source Voltage ID Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) 15 Pulsed (Note 1a) 100 EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG (Note 4) ±20 V 59 A (Note 5) 113 mJ @TC=25°C (Note 3) 55 W @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) 1.6 Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6635 FDD6635 D-PAK (TO-252) 13’’ 16mm 2500 units ©2007 Fairchild Semiconductor Corporation FDD6635 Rev. 1.2 www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics(Note 2) ID = 250 μA BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V 1 μA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS(th) ΔVGS(th) ΔTJ RDS(on) gFS VGS = 0 V, 35 ID = 250 μA, Referenced to 25°C V 32 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C Static Drain–Source On–Resistance VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, Forward Transconductance ID = 15 A ID = 13 A ID = 15 A, TJ=125°C ID = 15 A 1 1.9 –5 8.2 10.2 12.4 mV/°C 10 13 16 mΩ 53 S 1400 pF 317 pF 137 pF 1.4 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = 20 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg (TOT) Total Gate Charge, VGS = 10V Qg Total Gate Charge, VGS = 5V VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 20 V, ID = 15 A 11 20 ns 6 12 ns 28 45 ns 14 25 ns 26 36 nC 13 18 nC Qgs Gate–Source Charge 3.9 nC Qgd Gate–Drain Charge 5.3 nC FDD6635 Rev. 1.2 www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 15 A IF = 15 A, diF/dt = 100 A/µs 0.8 (Note 2) 1.2 V 26 ns 16 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. 5. Starting TJ = 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V FDD6635 Rev. 1.2 www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Electrical Characteristics 80 2.4 VGS=10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 70 ID, DRAIN CURRENT (A) 6.0V 4.5V 60 3.5V 50 40 30 20 3.0V 10 2.2 2 VGS = 3.5V 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 10 20 Figure 1. On-Region Characteristics 40 50 60 70 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 0.029 ID = 7.5A ID = 15A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 0.025 0.021 TA = 125oC 0.017 0.013 TA = 25oC 0.009 0.005 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 80 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 25oC 70 TA =-55oC ID, DRAIN CURRENT (A) 10V 1 60 125oC 50 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDD6635 Rev. 1.2 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics 2000 ID = 15A VDS = 10V f = 1MHz VGS = 0 V 15V 1600 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 CISS 1200 800 COSS 2 400 0 0 CRSS 0 5 10 15 20 25 0 30 5 Figure 7. Gate Charge Characteristics 20 25 30 P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 100µs 100 1ms 10ms 100ms 10 10s 1s DC 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 100 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1000 100 SINGLE PULSE RθJA = 96癈 /W TA = 25癈 80 I(AS), AVALANCHE CURRENT (A) I(pk), PEAK TRANSIENT CURRENT (A) 15 Figure 8. Capacitance Characteristics 1000 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 60 40 20 0 0.1 1 10 100 t1, TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDD6635 Rev. 1.2 1000 o TJ = 25 C 100 10 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.0 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6635 Rev. 1.2 www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics L VDS BVDSS tP VGS RGEN + DUT VDD VDD - 0V VGS VDS IAS IAS tp vary tP to obtain required peak IAS 0.01Ω tAV Figure 14. Unclamped Inductive Load Test Circuit Figure 15. Unclamped Inductive Waveforms Drain Current Regulator Same type as DUT + - 10μF QG 10V 50kΩ 10V + 1μF QGD QGS VGS VDD - VGS DUT Charge, (nC) Ig(REF) Figure 16. Gate Charge Test Circuit VDS RL tON tOFF td(ON) VDS + VGS RGEN Figure 17. Gate Charge Waveform DUT td(OFF) 90% VDD tf tr 90% VGS Pulse Width ≤ 1μs Duty Cycle ≤ 0.1% 10% 0V 90% VGS 50% 0V Figure 18. Switching Time Test Circuit FDD6635 Rev. 1.2 10% 10% 50% Pulse Width Figure 19. Switching Time Waveforms www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Test Circuits and Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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