FDMC4435BZ_F126

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) 87 -30 V, -18 A, 20 mW 12 DD 34 SG DD Bottom Top FDMC4435BZ, FDMC4435BZ-F127 WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC4435BZ Pin 1 General Description S This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.3 A Extended VGSS Range (−25 V) for Battery Applications High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability HBM ESD Protection Level > 7 kV Typical* 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant G SS D D Top DD Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC4435BZ−F127 Features • • • • • • • • SS 65 MARKING DIAGRAM ON AXYKK FDMC 4435BZ FDMC 4435BZ ALYW FDMC4435BZ FDMC4435BZ−F127 FDMC4435BZ = Specific Device Code A = Assembly Location XY = 2−Digit Date Code KK = 2−Digit Lot Run Traceability Code L = Wafer Lot Number YW = Assembly Start Week Applications • High Side in DC − DC Buck Converters • Notebook Battery Power Management • Load Switch in Notebook PIN ASSIGNMENT D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. © Semiconductor Components Industries, LLC, 2010 March, 2022 − Rev. 4 1 Publication Order Number: FDMC4435BZ/D FDMC4435BZ, FDMC4435BZ−F127 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Unit VDS Drain to Source Voltage −30 V VGS Gate to Source Voltage ±25 V A ID Parameter Drain Current Continuous TC = 25°C −18 Continuous (Note 1a) TA = 25°C −8.5 Pulsed −50 EAS Single Pulse Avalanche Energy (Note 2) 32 mJ PD Power Dissipation TC = 25°C 31 W Power Dissipation (Note 1a) TA = 25°C 2.3 TJ, TSTG Operating and Storage Junction Temperature Range −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit °C/W RqJC Thermal Resistance, Junction to Case 4 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 53 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Starting TJ = 25°C; P−ch: L = 1 mH, IAS = −8 A, VDD = −27 V, VGS = −10 V. www.onsemi.com 2 FDMC4435BZ, FDMC4435BZ−F127 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V BVDSS IGSS Gate to Source Leakage Current −30 V 21 mV/°C −1 VDS = −24 V, VGS = 0 V, TJ = 125°C −100 VGS = ±25 V, VDS = 0 V ±10 mA mA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C −5 Static Drain to Source On Resistance VGS = −10 V, ID = −8.5 A 14 20 VGS = −4.5 V, ID = −6.3 A 21 37 VGS = −10 V, ID = −8.5 A, TJ = 125°C 20 29 VDD = −5 V, ID = −8.5 A 25 rDS(on) gFS Forward Transconductance −1.0 −1.8 −3.0 V mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = −15 V, VGS = 0 V, f = 1 MHz 1535 2040 pF 310 410 pF 280 420 pF f = 1 MHz 4 VDD = −15 V, ID = −8.5 A, VGS = −10 V, RGEN = 6 W 10 20 ns 9 18 ns 35 56 ns W SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge 19 34 ns VGS = 0 V to −10 V, VDD = −15 V, ID = −8.5 A 38 53 nC VGS = 0 V to −4.5 V, VDD = −15 V, ID = −8.5 A 20 28 nC VDD = −15 V, ID = −8.5 A 4.3 nC 11 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = −8.5 A (Note 3) 0.86 1.5 V VGS = 0 V, IS = −1.9 A (Note 3) 0.74 1.2 trr Reverse Recovery Time IF = −8.5 A, di/dt = 100 A/ms 26 40 ns Qrr Reverse Recovery Charge 12 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. www.onsemi.com 3 FDMC4435BZ, FDMC4435BZ−F127 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE −ID, DRAIN CURRENT (A) 50 VGS = −4.5 V 40 VGS = −5 V VGS = −10 V 30 VGS = −4 V 20 10 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 1 2 VGS = −3.5 V 3 4 4.0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 3.5 VGS = −3.5 V 3.0 VGS = −4 V 2.5 VGS = −4.5 V 2.0 1.5 VGS = −5 V 1.0 0.5 VGS = −10 V 10 0 1.6 1.2 1.0 0.8 0 25 50 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 50 ID = −8.5 A 40 30 TJ = 125°C 20 10 75 100 125 150 TJ = 25°C 2 TJ, JUNCTION TEMPERATURE (°C) −IS, REVERSE DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDS = −5 V 30 20 TJ = 25°C TJ = −55°C 1 2 3 4 6 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage 50 TJ = 150°C 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 0 50 60 ID = −8.5 A 1.4 VGS = −10 V 10 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE Figure 1. On Region Characteristics 40 30 ID, DRAIN CURRENT (A) −VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 −75 −50 −25 20 5 50 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 TJ = −55°C 0.001 0.0 −VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 FDMC4435BZ, FDMC4435BZ−F127 10 10000 ID = −8.5 A VDD = −10 V 8 6 VDD = −15 V 4 VDD = −20 V 2 0 0 10 20 Ciss CAPACITANCE (pF) −VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 30 1000 Coss f = 1 MHz VGS = 0 V 10 0.1 40 Qg, GATE CHARGE (nC) 10 30 Figure 8. Capacitance vs. Drain to Source Voltage 40 −ID, DRAIN CURRENT (A) 20 −IAS, AVALANCHE CURRENT (A) 1 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 10 TJ = 25°C TJ = 125°C 1 0.001 0.01 0.1 1 10 30 VGS = −10 V VGS = −4.5 V 20 10 Limited by Package RqJC = 4°C/W 0 25 100 tAV, TIME IN AVALANCHE (ms) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature −4 10 −IG, GATE LEAKAGE CURRENT (A) 100 −ID, DRAIN CURRENT (A) Crss 100 100 ms 1 ms 1 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 SINGLE PULSE TJ = MAX RATED RqJA = 125°C/W TA = 25°C 0.1 1 1s 10 s DC 10 100 10 VDS = 0 V −5 10 TJ = 125°C −6 10 −7 10 −8 10 −VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25°C 0 5 10 15 20 25 −VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. IGSS vs. VGSS www.onsemi.com 5 30 FDMC4435BZ, FDMC4435BZ−F127 P(PK), PEAK TRANSIENT POWER (W) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 100 VGS = −10 V 10 SINGLE PULSE RqJA = 125°C/W TA = 25°C 1 0.5 −3 10 −2 −1 10 10 1 t, PULSE WIDTH (s) 100 10 1000 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 13. Single Pulse Maximum Power Dissipation 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJA(t) = r(t) x R qJA SINGLE PULSE 0.01 −3 10 −2 10 RqJA = 125°C/W Peak T J = PDM x Z qJA(t) + TA Duty Cycle, D = t 1 / t 2 −1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction−to−Ambient Transient Thermal Response Curve ORDERING INFORMATION Device Marking Package Type Shipping† FDMC4435BZ FDMC4435BZ WDFN8 3.3x3.3, 0.65P, case 511DR (Pb−Free) 3000 / Tape & Reel FDMC4435BZ−F127 FDMC4435BZ WDFN8 3.3x3.3, 0.65P, case 511DQ (Pb−Free) 3000 / Tape & Reel FDMC4435BZ−F127−L701 FDMC4435BZ WDFN8 3.3x3.3, 0.65P, case 511DQ (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13648G WDFN8 3.3X3.3, 0.65P DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com WDFN8 3.3x3.3, 0.65P CASE 511DQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13648G WDFN8 3.3X3.3, 0.65P DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DR ISSUE B GENERIC MARKING DIAGRAM* XXXX AYWWG G DOCUMENT NUMBER: DESCRIPTION: XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 98AON13650G WDFN8 3.3x3.3, 0.65P DATE 02 FEB 2022 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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