FDMC86012

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Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device. „ Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant Applications „ 3.3 V input synchronous buck switch „ Synchronous rectifier Pin 1 Pin 1 S D D Top D S S S D S D S D G D G D Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TC = 25 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 30 Units V ±12 V 88 (Note 1a) 23 (Note 4) 230 (Note 3) 337 54 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 2.3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86012 Device FDMC86012 ©2012 Fairchild Semiconductor Corporation FDMC86012 Rev. C Package Power33 Reel Size 13 ’’ 1 Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86012 N-Channel Power Trench® MOSFET October 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V 30 V 43 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -4 VGS = 4.5 V, ID = 23 A 2.2 rDS(on) Static Drain to Source On Resistance VGS = 2.5 V, ID = 17.5 A 3.4 4.7 VGS = 4.5 V, ID = 23 A, TJ = 125 °C 3.5 4.3 VDD = 5 V, ID = 23 A 144 VDS = 15 V, VGS = 0 V, f = 1 MHz 3625 5075 pF 1230 1725 pF 185 260 pF 0.9 3.0 Ω gFS Forward Transconductance 0.8 1.0 mV/°C 2.7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 Switching Characteristics td(on) Turn-On Delay Time 20 32 ns tr Rise Time 11 20 ns td(off) Turn-Off Delay Time 43 69 ns tf Fall Time 8 16 ns nC VDD = 15 V, ID = 23 A, VGS = 4.5 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V 27 38 Qg(TOT) Total Gate Charge 16 23 Qgs Gate to Source Charge VGS = 0 V to 2.5 V VDD = 15 V, ID = 23 A Qgd Gate to Drain “Miller” Charge nC 5.8 nC 5.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 23 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 V 40 64 ns 23 37 nC IF = 23 A, di/dt = 100 A/μs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 337 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 15 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33 A. 4. Pulsed Id limited by junction temperature,td