FDMS7570S

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS7570S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description „ Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. „ Max rDS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode Applications „ MSL1 robust package design „ Synchronous Rectifier for Synchronous Buck Converters „ 100% UIL tested „ Notebook „ RoHS Compliant „ Server „ Telecom „ High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 S D Power 56 D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 49 156 (Note 1a) 28 (Note 3) 144 -Pulsed A 180 Single Pulse Avalanche Energy EAS Ratings 25 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 83 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7570S Device FDMS7570S ©2011 Fairchild Semiconductor Corporation FDMS7570S Rev.C2 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7570S N-Channel PowerTrench®SyncFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 22 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -5 mV/°C VGS = 10 V, ID = 28 A 1.6 1.95 VGS = 4.5 V, ID = 22 A 2.3 2.85 VGS = 10 V, ID = 28 A, TJ = 125 °C 2.4 3.0 VDS = 5 V, ID = 28 A 170 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 3392 4515 pF 912 1215 pF 172 260 pF 1.2 2.1 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge 14 25 ns 5.9 12 ns 34 55 ns 4 10 ns VGS = 0 V to 10 V 49 69 nC VGS = 0 V to 4.5 V VDD = 13 V, ID = 28 A 22 32 VDD = 13 V, ID = 28 A, VGS = 10 V, RGEN = 6 Ω nC 9.9 nC 5.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.43 0.8 VGS = 0 V, IS = 28 A (Note 2) 0.78 1.2 28 45 ns 27 43 nC IF = 28 A, di/dt = 300 A/ μs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7570S Rev.C2 2 www.fairchildsemi.com FDMS7570S N-Channel PowerTrench® SyncFET Electrical Characteristics TJ = 25 °C unless otherwise noted 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V 135 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 180 VGS = 4.5 V VGS = 3.5 V VGS = 3 V 90 45 VGS = 2.7 V 0 0 1 2 3 4 6 VGS = 3 V 4 VGS = 3.5 V 2 VGS = 4.5 V VGS = 10 V 0 5 0 45 90 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 180 8 ID = 28 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 135 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 4 TJ = 125 oC 2 TJ = 25 oC 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 135 VDS = 5 V oC 90 TJ = 25 oC 45 TJ = -55 oC 1.5 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 125 4 VGS, GATE TO SOURCE VOLTAGE (V) 180 0 1.0 ID = 28 A 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 2.7 V 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC TJ = -55 oC 0.1 0.01 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7570S Rev.C2 3 1.2 www.fairchildsemi.com FDMS7570S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 28A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 16 V 4 1000 Coss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 1 Figure 7. Gate Charge Characteristics 160 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 120 VGS = 4.5 V 80 40 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 RθJC = 1.5 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 5000 100 100 us 10 1 30 Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss 100 0.1 50 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7570S Rev.C2 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7570S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7570S Rev.C2 5 www.fairchildsemi.com FDMS7570S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7570S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 30 25 CURRENT (A) 20 di/dt = 300 A/μs 15 10 5 0 -5 0 50 100 150 200 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7570S SyncFET body diode reverse recovery characteristic FDMS7570S Rev.C2 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7570S N-Channel PowerTrench® SyncFET Typical Characteristics (continued) PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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