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FDMS7670

FDMS7670

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    PowerTDFN8

  • 描述:

    MOSFET N-CH 30V 21A POWER56

  • 数据手册
  • 价格&库存
FDMS7670 数据手册
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS7670 N-Channel PowerTrench® MOSFET 30 V, 3.8 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A „ Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A „ Advanced Package and Silicon design for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications Applications „ IMVP Vcore Switching for Notebook „ MSL1 robust package design „ VRM Vcore Switching for Desktop and Server „ 100% UIL tested „ OringFET / Load Switch „ RoHS Compliant „ DC-DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 105 (Note 1a) 21 (Note 3) 144 -Pulsed A 150 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 62 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.0 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7670 Device FDMS7670 ©2012 Fairchild Semiconductor Corporation FDMS7670 Rev.D3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7670 N-Channel PowerTrench® MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.25 1.9 -7 mV/°C VGS = 10 V, ID = 21 A 2.9 3.8 VGS = 4.5 V, ID = 17 A 4.1 5.0 VGS = 10 V, ID = 21 A, TJ = 125 °C 4.0 5.3 VDS = 5 V, ID = 21 A 136 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3085 4105 pF 990 1315 pF 75 115 pF 1.2 2.5 Ω ns Switching Characteristics td(on) Turn-On Delay Time 15 26 tr Rise Time 12 ns td(off) Turn-Off Delay Time VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 Ω 6 31 50 ns tf Fall Time 5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 40 56 nC Qg Total Gate Charge 24 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A 17 Qgs 9.8 nC Qgd Gate to Drain “Miller” Charge 4.4 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 0.95 VGS = 0 V, IS = 21 A (Note 2) 0.8 1.1 V trr Reverse Recovery Time 38 61 ns Qrr Reverse Recovery Charge 19 34 nC ta Reverse Recovery Fall Time 14 ns tb Reverse Recovery Rise Time 24 ns S Softness (tb/ta) 1.7 trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 21 A, di/dt = 100 A/μs IF = 21 A, di/dt = 300 A/μs 32 51 ns 34 54 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 22 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDMS7670 Rev.D3 2 www.fairchildsemi.com FDMS7670 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 VGS = 10 V 120 ID, DRAIN CURRENT (A) VGS = 4 V VGS = 5 V VGS = 4.5 V 90 60 VGS = 3.5 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4 VGS = 3.5 V 3 VGS = 4.5 V 2 1 VGS = 5 V 2.0 0 30 60 90 120 150 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 15 ID = 21 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 21 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 12 9 6 TJ = 125 oC 3 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 150 500 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 120 ID, DRAIN CURRENT (A) VGS = 4 V VDS = 5 V 90 TJ = 150 oC 60 30 TJ = 25 oC TJ = -55 oC 2 3 4 10 1 TJ = 150 oC 5 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 0 1 VGS = 0 V 100 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS7670 Rev.D3 3 1.2 www.fairchildsemi.com FDMS7670 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 Ciss ID = 21 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 2 Coss 1000 100 50 0.1 0 0 10 20 30 Crss f = 1 MHz VGS = 0 V 40 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 40 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 100 VGS = 10 V 80 VGS = 4.5 V 60 40 20 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 200 100 10 1 ms 0.1 RθJC = 2.0 C/W TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) o Limited by Package 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 0.01 0.01 1s 10 s DERIVED FROM TEST DATA 0.1 1 10 DC 100 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 1000 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS7670 Rev.D3 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7670 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15. 25 100 di/dt = 300 A/μs CURRENT CURRENT(A) (A) 20 20 di/dt = 300 A/μs 15 15 10 10 55 00 -5 -5 -120 0 -90 30 -60 60 -30 90 0 120 30 150 60 180 TIME (ns) (ns) TIME Figure 14. Body Diode Reverse Recovery Characteristics ©2012 Fairchild Semiconductor Corporation FDMS7670 Rev.D3 5 www.fairchildsemi.com FDMS7670 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
FDMS7670 价格&库存

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FDMS7670
  •  国内价格 香港价格
  • 1+13.366121+1.65806
  • 10+9.0028310+1.11680
  • 100+6.33384100+0.78571
  • 500+5.14036500+0.63766
  • 1000+4.750051000+0.58925

库存:5313