FDMS7670AS

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS7670AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m: Features General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. „ Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A „ Max rDS(on) = 3.2 m: at VGS = 7 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design Applications „ 100% UIL tested „ Synchronous Rectifier for DC/DC Converters „ RoHS Compliant „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C MOSFET dv/dt EAS Single Pulse Avalanche Energy PD TJ, TSTG Units V ±20 V 42 113 (Note 1a) -Pulsed dv/dt Ratings 30 22 A 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 1.8 V/ns 98 mJ 65 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.9  (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7670AS Device FDMS7670AS ©2010 Fairchild Semiconductor Corporation FDMS7670AS Rev.C2 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 PA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 14 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 VGS = 10 V, ID = 21 A 2.4 VGS = 7 V, ID = 19 A 2.5 3.2 VGS = 4.5 V, ID = 17 A 3.0 3.5 VGS = 10 V, ID = 21 A, TJ = 125 °C 3.0 3.8 VDS = 5 V, ID = 21 A 300 rDS(on) StaticDrain to Source On Resistance gFS Forward Transconductance 1.2 1.6 mV/°C 3.0 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3175 4225 pF 1175 1565 pF 110 165 pF 1.3 2.6 : 14 25 ns 6 12 ns 35 56 ns 5 10 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 47 66 nC Qg Total Gate Charge 22 31 nC Qgs Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 : 8.5 nC 4.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.43 0.7 VGS = 0 V, IS = 21 A (Note 2) 0.75 1.2 IF = 21 A, di/dt = 300 A/ Ps V 35 56 ns 41 67 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7670AS Rev.C2 2 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TA = 25 °C unless otherwise noted 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.5 VGS = 3.5 V 120 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 90 VGS = 4 V VGS = 3 V 60 30 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 3.0 VGS = 3 V 2.5 VGS = 3.5 V 2.0 VGS = 4 V 1.5 VGS = 4.5 V 1.0 VGS = 10 V 0.5 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 120 150 10 ID = 21 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 90 TJ = 125 oC 60 = 25 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 TJ = 125 oC 4 2 TJ = 25 oC 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 1.5 6 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 0 1.0 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 8 2 150 TJ ID = 21 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7670AS Rev.C2 3 1.2 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 Ciss ID = 21 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 Coss 1000 Crss 2 100 f = 1 MHz VGS = 0 V 60 0.1 0 0 10 20 30 40 50 Figure 7. Gate Charge Characteristics TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 90 VGS = 4.5 V 60 30 o RTJC = 1.9 C/W Limited by Package 1 0.01 0.1 1 10 0 25 100 300 P(PK), PEAK TRANSIENT POWER (W) 10 ms 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10 s RTJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 200 150 VGS = 10 V 1000 100 10 SINGLE PULSE RTJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7670AS Rev.C2 125 10000 1 ms THIS AREA IS LIMITED BY rDS(on) 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 Ps 10 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 50 o tAV, TIME IN AVALANCHE (ms) 1 30 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7670AS Rev.C2 5 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7670AS. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/Ps 10 5 0 -5 0 30 60 90 120 150 TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 14. FDMS7670AS SyncFET body diode reverse recovery characteristic FDMS7670AS Rev.C2 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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