FDN5632N-F085

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Other names and brands may be claimed as the property of others. N-Channel Logic Level PowerTrench® MOSFET 60 V, 1.6 A, 98 mΩ Features „ RDS(on) = 98 mΩ at VGS = 4.5 V, ID = 1.6 A „ RDS(on) = 82 mΩ at VGS = 10 V, ID = 1.7 A „ Typ Qg(TOT) = 9.2 nC at VGS = 10 V „ Low Miller Charge „ UIS Capability „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC/DC converter „ Motor Drives MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Drain to Source Voltage VDSS VGS ID Ratings 60 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 1.7 Pulsed 10 EAS Single Pulse Avalanche Energy PD Power Dissipation Parameter (Note 1) RθJA 74 mJ 1.1 TJ, TSTG Operating and Storage Temperature RθJC A W o -55 to +150 C Thermal Resistance Junction to Case 75 o C/W Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 111 o C/W Note: 1: EAS of 74mJ is 100% test at L=80mH, IAS=1.4A, starting TJ = 25 oC Package Marking and Ordering Information Device Marking 5632 Device FDN5632N-F085 ©2015 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Package SSOT3 Reel Size 7” Tape Width 8mm Quantity 3000 units Publication Order Number: FDN5632N-F085/D FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET FDN5632N-F085 Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 60 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 1 2.0 3 V ID = 1.7A, VGS= 10V - 57 82 ID = 1.6A, VGS= 6V - VDS = 48V, TA = 125oC VGS = 0V μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 1.6A, VGS= 4.5V 62 88 70 98 135 mΩ ID = 1.7A, VGS= 10V, TA = 150oC - 107 VDS = 15V, VGS = 0V, f = 1MHz - 475 - pF - 60 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 30 - RG Gate Resistance f = 1MHz - 1.4 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 9.2 12 nC Qgs Gate to Source Gate Charge - 1.5 - nC Qgd Gate to Drain “Miller“ Charge - 1.4 - nC Min Typ Max Units ns VDD = 20V ID = 1.7A Electrical Characteristics TA = 25oC unless otherwise noted Symbol Parameter Test Conditions Switching Characteristics ton Turn-On Time - - 30 td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 1.7 - ns td(off) Turn-Off Delay Time - 5.2 - ns tf Fall Time - 1.3 - ns toff Turn-Off Time - - 12.9 ns ISD = 1.7A - 0.8 1.25 ISD = 0.85A - 0.8 1.0 - 16.0 21 ns - 7.9 10.3 nC VDD = 30V, ID = 1.0A VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 1.7A, dISD/dt = 100A/μs www.onsemi.com 2 V FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 3 1.2 2 0.8 0.6 VGS = 10V VGS = 4.5V 1 0.4 0.2 o RθJA = 111 C/W 0.0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 25 150 50 75 100 125 150 TA, AMBIENT TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE o RθJA = 111 C / W 0.01 -3 -2 10 10 -1 10 0 1 10 10 t, RECTANGULAR PULSE DURATION(s) 2 3 10 10 4 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 150 - TC 125 10 SINGLE PULSE o RθJA = 111 C / W 1 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 2 10 3 10 4 10 FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 12 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 100us 1 1ms 10ms 0.1 100ms 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.001 0.01 SINGLE PULSE TJ = MAX RATED 1s DC 9 VDD = 5V 6 TJ = 25oC TJ = -55oC 3 TJ = 150oC o TA = 25 C 0 0 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 6. Transfer Characteristics 200 12 VGS = 10V rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID, DRAIN CURRENT (A) VGS = 6V VGS = 5V 9 VGS = 4.5V VGS = 4V 6 VGS = 3.5V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 3 ID = 1.7A 150 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 100 TJ = 150oC 50 TJ = 25oC VGS = 3V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.2 1.0 0.6 -80 6 8 10 1.4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.6 0.8 4 Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage 2.0 1.8 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0 4 ID = 1.7A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature 160 1.2 VGS = VDS ID = 250μA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature www.onsemi.com 4 160 FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1000 1.15 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250μA 1.10 1.05 1.00 Ciss Coss 100 0.95 Crss f = 1MHz VGS = 0V 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Capacitance vs Drain to Source Voltage VGS, GATE TO SOURCE VOLTAGE(V) Figure 14. 10 ID = 1.7A 8 VDD = 20V 6 VDD = 30V 4 VDD = 40V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Figure 13. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 50 FDN5632N-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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