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N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
Features
Description
• RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior
switching performance.
• Low FOM RDS(on) * QG
• Low Reverse-Recovery Charge, Qrr = 112 nC
• Soft Reverse-Recovery Body Diode
• Enables High Efficiency in Synchronous Rectification
• Fast Switching Speed
Applications
• 100% UIL Tested
• Synchronous Rectification for ATX / Server / Telecom PSU
• This device is Pb-Free, Halogen Free/BFR Free and
is RoHS Compliant
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
- Continuous (TC = 25oC, Silicon Limited)
Drain Current
ID
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
PD
- Continuous (TC = 100oC, Silicon Limited)
FDP027N08B_F102
80
Unit
V
±20
V
223*
158*
A
- Continuous (TC = 25oC, Package Limited)
120
- Pulsed
(Note 1)
892
A
(Note 2)
917
mJ
6.0
V/ns
(Note 3)
(TC = 25oC)
- Derate Above 25oC
246
W
1.64
W/oC
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
TL
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A.
o
C
o
C
Thermal Characteristics
Symbol
Parameter
FDP027N08B_F102
RθJC
Thermal Resistance, Junction to Case, Max.
0.61
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Semiconductor Components Industries, LLC
December 2017, Rev. 3
1
Unit
o
C/W
Publication Order Number:
FDP027N08B/D
FDP027N08B — N-Channel PowerTrench® MOSFET
FDP027N08B
Part Number
FDP027N08B-F102
Top Mark
FDP027N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
80
-
-
V
-
0.05
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to
25oC
VDS = 64 V, VGS = 0 V
-
-
1
VDS = 64 V, TC = 150oC
-
-
500
VGS = ±20 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.5
-
4.5
V
Static Drain to Source On Resistance
-
2.21
2.7
mΩ
gFS
Forward Transconductance
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
-
227
-
S
-
10170
13530
pF
-
1670
2220
pF
-
35
-
pF
-
3025
-
pF
-
137
178
nC
-
56
-
nC
-
25
-
nC
-
28
-
nC
f = 1 MHz
-
2.4
-
Ω
-
47
104
ns
VDD = 40 V, ID = 100 A,
VGS = 10 V, RG = 4.7 Ω
-
66
142
ns
-
87
184
ns
-
41
92
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Engry Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 40 V, VGS = 0 V,
f = 1 MHz
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 10 V,
ID = 100A
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
223*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
892
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 100 A
-
-
1.3
V
trr
Reverse Recovery Time
-
80
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, VDD = 40 V, ISD = 100 A,
dIF/dt = 100 A/μs
-
112
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 24.72 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
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2
FDP027N08B — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
500
100
ID, Drain Current[A]
ID, Drain Current[A]
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
*Notes:
1. 250μs Pulse Test
10
o
2. TC = 25 C
5
0.1
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
o
25 C
10
o
-55 C
1
VDS, Drain-Source Voltage[V]
1
2.5
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
3.5 4.0 4.5 5.0 5.5
VGS, Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
VGS = 10V
2.0
VGS = 20V
1.5
100
o
o
25 C
175 C
10
*Notes:
1. VGS = 0V
o
2. 250μs Pulse Test
*Note: TC = 25 C
0
100
200
300
ID, Drain Current [A]
400
1
0.2
500
Figure 5. Capacitance Characteristics
10
Ciss
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
10000
Capacitances [pF]
0.4
0.6
0.8
1.0
1.2 1.3
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
30000
100
6.5
500
2.5
1.0
6.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.0
RDS(ON) [mΩ],
Drain-Source On-Resistance
o
175 C
6
4
2
0
80
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3
VDS = 16V
VDS = 40V
VDS = 64V
8
*Note: ID = 100A
0
30
60
90
120
Qg, Total Gate Charge [nC]
150
FDP027N08B — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.08
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 250μA
0.92
-80
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 100A
0.5
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
250
2000
1000
VGS= 10V
200
100
100us
10
Operation in This Area
is Limited by R DS(on)
1
ID, Drain Current [A]
ID, Drain Current [A]
10us
1ms
10ms
DC
*Notes:
o
1. TC = 25 C
0.1
0.01
150
100
50
o
2. TJ = 175 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
o
RθJC= 0.61 C/W
0
25
200
Figure 11. Eoss vs. Drain to Source Voltage
175
200
100
IAS, AVALANCHE CURRENT (A)
5
4
3
2
1
0
50
75
100
125
150
o
TC, Case Temperature [ C]
Figure 12. Unclamped Inductive
Switching Capability
6
EOSS, [μJ]
200
0
20
40
60
VDS, Drain to Source Voltage [V]
80
TJ = 25 oC
TJ = 150 oC
10
1
0.001
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
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4
1000
FDP027N08B — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
o
ZThermal
Response
θJC(t), Thermal
Response
[ZθJC[ ]C/W]
1
0.5
0.1
0.2
PDM
0.1
t1
0.05
o
0.01
0.01
1. ZθJC(t) = 0.61 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.005
-5
10
t2
*Notes:
0.02
-4
10
-3
10
-2
10
Duration[sec]
[sec]
t1Rectangular
, Rectangular Pulse
Pulse Duration
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5
-1
10
1
FDP027N08B — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP027N08B — N-Channel PowerTrench® MOSFET
IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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6
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
FDP027N08B — N-Channel PowerTrench® MOSFET
DUT
FDP027N08B — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
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verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Always visit ON Semiconductor’s online packaging area for the most recent package drawings: www.onsemi.com
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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