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FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75 V, 80 A, 4.7 mΩ
Features
Applications
• R DS(ON) = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• Qg(tot) = 92 nC (Typ.), VGS = 10V
• Battery Protection Circuit
• Low Miller Charge
• Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
GD
S
TO-220
G
G
D
TO-247
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
FDP047AN08A0
FDH047AN08A0
Parameter
Drain to Source Voltage
75
V
Gate to Source Voltage
±20
V
80
A
15
A
Drain Current
Continuous (TC < 144oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS
PD
TJ, TSTG
Unit
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
475
mJ
Power dissipation
310
W
Derate above 25oC
Operating and Storage Temperature
2.0
W/oC
-55 to 175
C
o
Thermal Characteristics
Thermal Resistance Junction to Case, Max. TO-220, TO-247
RθJA
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
62
o
C/W
RθJA
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
30
o
C/W
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
1
0.48
oC/W
RθJC
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP047AN08A0
FDP047AN08A0
TO-220
Tube
N/A
50 units
FDH047AN08A0
FDH047AN08A0
TO-247
Tube
N/A
30 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
75
-
-
-
V
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
-
4
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 60V
VGS = 0V
TC = 150oC
µA
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
ID = 80A, VGS = 10V
-
0.0040 0.0047
ID = 37A, VGS = 6V
-
0.0058 0.0087
ID = 80A, VGS = 10V,
TJ = 175oC
-
0.0082
0.011
-
6600
-
-
1000
-
pF
-
240
-
pF
-
92
138
nC
-
11
17
nC
-
27
-
nC
-
16
-
nC
-
21
-
nC
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 40V
ID = 80A
Ig = 1.0mA
pF
(VGS = 10V)
tON
Turn-On Time
-
-
160
ns
td(ON)
Turn-On Delay Time
-
18
-
ns
tr
Rise Time
-
88
-
ns
td(OFF)
Turn-Off Delay Time
-
40
-
ns
tf
Fall Time
-
45
-
ns
tOFF
Turn-Off Time
-
-
128
ns
VDD = 40V, ID = 80A
VGS = 10V, RGS = 3.3Ω
Drain-Source Diode Characteristics
ISD = 80A
-
-
1.25
V
ISD = 40A
-
-
1.0
V
Reverse Recovery Time
ISD = 75A, dISD/dt = 100A/µs
-
-
53
ns
Reverse Recovered Charge
ISD = 75A, dISD/dt = 100A/µs
-
-
54
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 0.232mH, IAS = 64A.
2: Pulse Width = 100s
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
2
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
200
CURRENT LIMITED
BY PACKAGE
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
160
120
80
40
0.2
0
0
25
50
75
100
150
125
0
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
1000
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 10V
150
100
50
10-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
3
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
500
2000
10µs
1000
100
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100µs
1ms
10ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED
D BY DS(ON)
1
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
150
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
90
TJ = 175oC
60
TJ = -55oC
TJ = 25oC
VGS = 7V
VGS = 10V
120
ID, DRAIN CURRENT (A)
120
ID , DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
VGS = 6V
90
60
VGS = 5V
TC = 25oC
30
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
4.0
0
4.5
5.0
5.5
VGS , GATE TO SOURCE VOLTAGE (V)
0
6.0
Figure 7. Transfer Characteristics
1.5
Figure 8. Saturation Characteristics
2.5
7
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
DRAIN TO SOURCE ON RESISTANCE(mΩ)
0.5
1.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
6
VGS = 6V
5
4
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
VGS = 10V, ID = 80A
3
0
20
40
ID, DRAIN CURRENT (A)
60
0.5
-80
80
Figure 9. Drain to Source On Resistance vs Drain
Current
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
160
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
4
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.2
1.15
ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
1.05
1.00
0.95
0.90
-80
200
-40
0
80
120
160
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
VGS , GATE TO SOURCE VOLTAGE (V)
10
CISS = CGS + CGD
COSS ≅ CDS + CGD
1000
CRSS = CGD
VDD = 40V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 10A
2
VGS = 0V, f = 1MHz
100
0.1
40
TJ , JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
C, CAPACITANCE (pF)
1.10
0
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
75
0
Figure 13. Capacitance vs Drain to Source
Voltage
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
25
50
Qg, GATE CHARGE (nC)
75
100
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
5
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
VGS
VGS = 10V
+
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 18. Gate Charge Waveforms
Figure 17. Gate Charge Test Circuit
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
+
VGS
VDD
-
10%
0
10%
DUT
90%
RGS
VGS
VGS
0
Figure 19. Switching Time Test Circuit
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
50%
10%
50%
PULSE WIDTH
Figure 20. Switching Time Waveforms
6
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
.SUBCKT FDP047AN08A0 2 1 3 ;
CA 12 8 1.5e-9
CB 15 14 1.5e-9
CIN 6 8 6.4e-9
rev March 2002
LDRAIN
DPLCAP
10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RLDRAIN
RSLC1
51
5
51
EVTHRES
+ 19 8
+
LGATE
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 4.81e-9
LSOURCE 3 7 4.63e-9
ESLC
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
EBREAK 11 7 17 18 82.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
DRAIN
2
5
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
LSOURCE
CIN
8
SOURCE
3
7
RSOURCE
RLSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9e-4
RGATE 9 20 1.36
RLDRAIN 2 5 10
RLGATE 1 9 48.1
RLSOURCE 3 7 46.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
S1A
12
S2A
14
13
13
8
S1B
CA
RBREAK
15
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
VBAT
5
8
EDS
-
IT
14
+
+
-
+
8
22
RVTHRES
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DBODYMOD D (IS = 2.4e-11 N = 1.04 RS = 1.76e-3 TRS1 = 2.7e-3 TRS2 = 2e-7 XTI=3.9 CJO = 4.35e-9 TT = 1e-8
M = 5.4e-1)
.MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 N = 10 M = 0.53)
.MODEL MMEDMOD NMOS (VTO = 3.7 KP = 9 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36)
.MODEL MSTROMOD NMOS (VTO = 4.4 KP = 250 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 3.05 KP = 0.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36e1 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.9e-2 TC2 = 4e-5)
.MODEL RSLCMOD RES (TC1 = 1.3e-3 TC2 = 1e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -6e-3 TC2 = -1.9e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -4.0 VOFF= -1.5)
VON = -1.5 VOFF= -4.0)
VON = -1.0 VOFF= 0.5)
VON = 0.5 VOFF= -1.0)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
7
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
REV March 2002
template FDP047AN08A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 2.4e-11, n1 = 1.04, rs = 1.76e-3, trs1 = 2.7e-3, trs2 = 2e-7, xti = 3.9, cjo = 4.35e-9, tt = 1e-8, m = 5.4e-1)
dp..model dbreakmod = (rs = 1.5e-1, trs1 = 1e-3, trs2 = -8.9e-6)
dp..model dplcapmod = (cjo = 1.35e-9, isl =10e-30, nl =10, m = 0.53)
m..model mmedmod = (type=_n, vto = 3.7, kp = 9, is =1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 4.4, kp = 250, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 3.05, kp = 0.03, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -4.0, voff = -1.5)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -1.5, voff = -4.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.0, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.0)
LDRAIN
DPLCAP
10
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 6.4e-9
RLDRAIN
RSLC1
51
RSLC2
ISCL
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
GATE
1
EVTEMP
RGATE + 18 22
9
20
21
DBODY
MWEAK
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
S1A
12
S2A
13
8
14
13
S1B
CA
11
16
6
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = -9e-7
res.rdrain n50 n16 = 9e-4, tc1 = 1.9e-2, tc2 = 4e-5
res.rgate n9 n20 = 1.36
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 48.1
res.rlsource n3 n7 = 46.3
res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 =1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.3e-3, tc1 = 1e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -6e-3, tc2 = -1.9e-5
DBREAK
50
-
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 4.81e-9
l.lsource n3 n7 = 4.63e-9
DRAIN
2
5
RBREAK
15
17
18
RVTEMP
S2B
13
CB
6
8
EGS
-
19
IT
14
+
+
VBAT
5
8
EDS
-
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 82.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
}
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
8
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
SABER Electrical Model
th
JUNCTION
REV 23 March 2002
FDP047AN08A0T
CTHERM1 th 6 6.45e-3
CTHERM2 6 5 3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 tl 1e-1
RTHERM1
CTHERM1
6
RTHERM1 th 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1.1e-1
RTHERM6 2 tl 1.4e-1
CTHERM2
RTHERM2
5
SABER Thermal Model
SABER thermal model FDP047AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.45e-3
ctherm.ctherm2 6 5 = 3e-2
ctherm.ctherm3 5 4 = 1.4e-2
ctherm.ctherm4 4 3 = 1.65e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 1e-1
CTHERM3
RTHERM3
4
RTHERM4
rtherm.rtherm1 th 6 = 3.24e-3
rtherm.rtherm2 6 5 = 8.08e-3
rtherm.rtherm3 5 4 = 2.28e-2
rtherm.rtherm4 4 3 = 1e-1
rtherm.rtherm5 3 2 = 1.1e-1
rtherm.rtherm6 2 tl = 1.4e-1
}
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
9
CASE
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FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
SPICE Thermal Model
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220 3L
Figure 21. TO-220, Molded, 3Lead, Jedec Variation AB
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Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
10
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-247 3L
Figure 22. TO-247, Molded, 3 Lead, Jedec Variation AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
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tm
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Rev. I66
©2003 Fairchild Semiconductor Corporation
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FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
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