FDS8960C

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS8960C Dual N & P-Channel PowerTrench® MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. • Q1: • Q2: P-Channel –5A, –35V RDS(on) = 0.053Ω @ VGS = –10V RDS(on) = 0.087Ω @ VGS = –4.5V • Fast switching speed • RoHS compliant Q2 DD2 DD2 5 DD1 4 6 3 Q1 G2 S2 G SO-8 Pin 1 SO-8 G1 S1 S Symbol S 7 2 8 1 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VDS(Avalanche) VGSS Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) Gate-Source Voltage ID Drain Current PD - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation - Continuous Q1 Q2 Units (Note 3) 35 40 –35 –40 (Note 1a) ±20 7 ±25 –5 V V V 20 –20 A 2 1.6 1 0.9 –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D1 D N-Channel 7.0A, 35V Operating and Storage Junction Temperature Range W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8960C FDS8960C 13” 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET November 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Q1 24.5 mJ Q2 Q1 Q2 12.5 mJ A Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy (Single Pulse) VDD = 35 V, ID = 7 A, L = 1 mH VDD = –35 V, ID =–5 A, L = 1 mH Drain-Source Avalanche Current 7 –5 Off Characteristics BVDSS ID = 250 μA VGS = 0 V, ID = –250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 28 V, VGS = 0 V VGS = 0 V VDS = –28 V, VGS = 20 V, VDS = 0 V IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = –20 V, VDS = 0 V IGSSR Gate-Body Leakage, Forward VGS = 25 V, VDS = 0 V IGSSF Gate-Body Leakage, Reverse VGS = –25 V, VDS = 0 V ΔBVDSS ΔTJ IDSS On Characteristics 35 –35 V 31 –40 Q2 mV/°C 1 –1 100 μA –100 nA 100 nA –100 nA 3 –3 V nA (Note 2) VGS(th) Gate Threshold Voltage ΔVGS(th) ΔTJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS Q1 Q2 Q1 Q2 Q1 Q2 Q1 Forward Transconductance ID = 250 μA VDS = VGS, ID = –250 µA VDS = VGS, ID = 250 μA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A ID = 6 A VGS = 4.5 V, VGS = 10 V, ID = 7 A, TJ = 125°C ID = –5 A VGS = –10 V, ID = –4 A VGS = –4.5 V, VGS = –10 V, ID = –5 A, TJ = 125°C VDS = 5 V, ID = 7 A ID =–5 A VDS = –5 V, Q1 Q2 Q1 Q2 Q1 Q2 1 –1 2 –1.8 –5 4 20 25 29 Q1 Q2 44 70 61 23 9 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 570 540 126 113 52 60 2 6 mV/°C 24 32 37 mΩ 53 87 79 S Dynamic Characteristics Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Q2 Reverse Transfer Capacitance VDS = –15 V, VGS = 0 V, f = 1.0 MHz RG Gate Resistance FDS8960C Rev C1(W) f = 1.0 MHz pF pF pF Ω www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Gate-Drain Charge Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = –15 V, ID = -1 A, VGS = –10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 5 V Q2 VDS = –15 V, ID = –5 A,VGS = –5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 12 5 16 23 20 3 5 5.5 5.7 1.8 1.8 1.8 2 16 22 10 29 37 32 6 10 7.7 8 ns ns ns ns nC nC nC Drain–Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = –1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.8 –0.8 20 17 10 5 1.3 –1.3 1.2 –1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a .02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics 2.6 20 6.0V 4.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 16 12 8 3.0V 4 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 VGS = 3.5V 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 8 12 ID, DRAIN CURRENT (A) 16 20 0.065 ID = 7A VGS = 10V ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) 1.6 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 0.8 0 1.4 1.2 1 0.8 0.6 0.055 0.045 TA = 125oC 0.035 0.025 TA = 25oC 0.015 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 TA = -55oC 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) 2.4 125oC 20 15 10 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDS8960C Rev C1(W) 4.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q1 (N-Channel) 800 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A VDS = 10V 15V f = 1 MHz VGS = 0 V 700 8 Ciss 600 CAPACITANCE (pF) 20V 6 4 500 400 300 Coss 200 2 100 0 0 2 4 6 8 10 Crss 0 12 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 35 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100μs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 10 1ms 10ms 100ms 1 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 100 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 40 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 30 I(AS), AVALANCHE CURRENT(A) I(pk), PEAK TRANSIENT CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) o TJ = 25 C 10 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDS8960C Rev C1(W) 1000 1 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q1 (N-Channel) 3.4 20 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -ID, DRAIN CURRENT (A) -4.5V 16 12 8 -3.5V 4 -3.0V 3.2 3 VGS = - 3.5V 2.8 2.6 2.4 2.2 -4.0V 2 1.8 -4.5V -5.0V 1.6 -6.0V 1.4 1.2 -10V 1 0 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. On-Region Characteristics. 20 0.2 ID = -2.5A ID = -5A VGS = - 10V 1.5 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.3 1.2 1.1 1 0.9 0.8 0.18 0.16 0.14 0.12 TA = 125oC 0.1 0.08 0.06 TA = 25oC 0.04 0.7 0.6 0.02 -50 -25 0 25 50 75 100 125 150 2 4 o 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 15. On-Resistance Variation with Temperature. Figure 16. On-Resistance Variation with Gate-to-Source Voltage. 20 -IS, REVERSE DRAIN CURRENT (A) 100 VDS = -5V -ID, DRAIN CURRENT (A) 10 -ID, DRAIN CURRENT (A) 16 o 25 C TA = -55oC 12 125oC 8 4 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. Transfer Characteristics. FDS8960C Rev C1(W) 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) 800 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -5A VDS = -10V f = 1 MHz VGS = 0 V 700 -15V CISS CAPACITANCE (pF) 8 -20V 6 4 2 600 500 400 300 COSS 200 100 CRSS 0 0 0 2 4 6 8 10 12 0 5 10 Qg, GATE CHARGE (nC) Figure 19. Gate Charge Characteristics. 25 30 35 50 P(pk), PEAK TRANSIENT POWER (W) 100μs RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 Figure 21. Maximum Safe Operating Area. 10 100 1000 Figure 22. Single Pulse Maximum Power Dissipation. 10 SINGLE PULSE RθJA = 135°C/W TA = 25°C 20 10 0.01 0.1 1 10 100 t1, TIME (sec) Figure 23. Single Pulse Maximum Peak Current FDS8960C Rev C1(W) 1000 I(AS), AVALANCHE CURRENT(A) 30 0 0.001 1 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) I(pk), PEAK TRANSIENT CURRENT(A) 20 Figure 20. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) o TJ = 25 C 1 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 24. Unclamped Inductive Switching Capability www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 135 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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