FDWS86369-F085

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 80 V 7.5 mW @ 10 V 65 A 80 V, 65 A, 7.5 mW ELECTRICAL CONNECTION FDWS86369-F085 Features • • • • • • Typ RDS(on) = 5.9 mW at VGS = 10 V; ID = 65 A Typ Qg(tot) = 35 nC at VGS = 10 V; ID = 65 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant N−Channel MOSFET Top Applications • • • • • Bottom D Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems G S S D D D S Pin 1 DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Parameter Symbol Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current (TC = 25°C) Continuous (VGS = 10 V) (Note 1) Pulsed EAS Single Pulse Avalanche Energy (Note 2) PD Power Dissipation Derate above 25°C TJ, TSTG Operating and Storage Temperature A 65 (see Fig. 141) 27 mJ 107 0.71 W W/°C −55 to +175 °C Thermal Resistance (Junction to case) 1.4 °C/W RθJA Maximum Thermal Resistance (Junction to Ambient) (Note 3) 50 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting Tj = 25°C, L = 20 mH, IAS = 52 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche. 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqJA is determined by the user’s board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. October, 2021 − Rev. 3 ON AYWWWL FDWS 86369 RθJC © Semiconductor Components Industries, LLC, 2015 MARKING DIAGRAM 1 A Y WW WL FDWS 86369 = Assembly Location = Year = Work Week = Assembly Lot = Device Code = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† FDWS86369−F085 DFNW8 (Power56) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDWS86369−F085/D FDWS86369−F085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V OFF CHARACTERISTICS BVDSS IDSS IGSS Drain−to−Source Leakage Current VDS = 80 V, VGS = 0 V, TJ = 25°C − − 1 mA VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) − − 1 mA VGS = ±20 V − − ±100 nA VGS = VDS, ID = 250 mA 2.0 3.0 4.0 V ID = 65 A, VGS = 10 V, TJ = 25°C − 5.9 7.5 mW ID = 65 A, VGS = 10 V, TJ = 175°C (Note 4) − 12.2 15.5 VDS = 40 V, VGS = 0 V, f = 1 MHz − 2470 − Gate−to−Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage RDS(on) Drain to Source On−Resistance DYNAMIC CHARACTERISTICS pF Ciss Input Capacitance Coss Output Capacitance − 400 − Crss Reverse Transfer Capacitance − 14 − − 1.8 − W 35 46 nC ns Rg Qg(ToT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge VGS = 0 V to 10 V Threshold Gate Charge VGS = 0 V to 2 V VDD = 64 V, ID = 65 A 4.5 Qgs Gate−to−Source Gate Charge 12.5 Qgd Gate−to−Drain “Miller” Charge 8 SWITCHING CHARACTERISTICS ton Turn−On Time td(on) Turn−On Delay tr td(off) tf toff VDD = 40 V, ID = 65 A, VGS = 10 V, RGEN = 6 W − − 39 − 15 − Rise Time − 11 − Turn−Off Delay − 24 − Fall Time − 8 − Turn−Off Time − − 48 DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage Trr Reverse−Recovery Time Qrr Reverse−Recovery Charge V ISD = 65 A, VGS = 0 V − − 1.4 ISD = 32.5 A, VGS = 0 V − − 1.2 IF = 65 A, DISD/Dt = 100 A/ms, VDD = 64 V − 49 74 ns − 44 68 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production www.onsemi.com 2 FDWS86369−F085 TYPICAL CHARACTERISTICS 100 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 80 Current Limited by Silicon 60 40 20 0 175 25 50 TC, CASE TEMPERATURE (°C) NORMALIZED THERMAL IMPEDANCE, ZqJC 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs. Case Temperature 2 VGS = 10 V Current Limited by Package Figure 2. Maximum Continuous Drain Current vs. Case Temperature Duty Cycle − Descending Order 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZqJA x RqJA + TC Single Pulse 0.01 10−5 10−4 10−3 10−2 10−1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10 V TC = 25°C For temperatures above 25°C derate peak current as follows: I + I 25 100 Single Pulse 10 10−5 10−4 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 3 ƪǸ ƫ 175 * T C 150 100 101 FDWS86369−F085 TYPICAL CHARACTERISTICS 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 10 100 ms 1 Operation in this area may be limited by RDS(on) 0.1 1 ms 10 ms 100 ms TC = 25°C TJ = Max Rated Single Pulse 0.01 0.1 1 10 100 10 Starting TJ = 150°C 0.1 10 0.01 1 100 tAV, TIME IN AVALANCHE (ms) (Note: Refer to onsemi Applications Notes AN7514 and AN7515) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 200 Pulse Duration = 80 ms Duty Cycle = 0.5% Max VDD = 5 V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 150 100 TJ = 175°C 50 0 TJ = 25°C 2 3 4 TJ = −55°C 5 6 7 8 9 10 TJ = 175°C 1 0.0 0.2 0.4 0.6 0.8 1.2 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 200 150 100 80 ms Pulse Width TJ = 25°C 50 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 1 2 3 4 80 ms Pulse Width TJ = 175°C 1.4 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 150 100 50 5V 5V 0 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 0 V 100 0.1 10 200 0 Starting TJ = 25°C 1 0.001 500 100 If R = 0 tAV=(L)(IAS)/(1.3*Rated BVDSS − VDD) If R ≠ 0 tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1] 0 5 0 VDS, DRAIN−SOURCE VOLTAGE (V) 1 2 3 4 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDWS86369−F085 TYPICAL CHARACTERISTICS ID = 65 A 2.2 Pulse Duration = 80 ms Duty Cycle = 0.5% Max 80 NORMALIZED DRAIN−SOURCE ON−RESISTANCE RDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) 100 60 TJ = 175°C TJ = 25°C 40 20 0 6 7 1.8 1.6 1.4 1.2 1.0 0.8 ID = 65 A VGS = 10 V 0.6 0.4 −80 10 9 8 Pulse Duration = 80 ms Duty Cycle = 0.5% Max 2.0 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.0 0.8 0.6 0.4 40 0 −40 80 120 160 200 1.00 0.95 0.90 −80 −40 VGS, GATE−TO−SOURCE VOLTAGE (V) CAPACITANCE (pF) Coss 10 Crss 1 40 80 120 160 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Ciss 1 0.1 0 TJ, JUNCTION TEMPERATURE (°C) 10000 f = 1 MHz VGS = 0 V 200 1.05 Figure 13. Normalized Gate Threshold Voltage vs. Temperature 100 160 ID = 5 mA TJ, JUNCTION TEMPERATURE (°C) 1000 120 1.10 VGS = VDS ID = 250 mA 0.2 −80 80 Figure 12. Normalized RDS(on) vs. Junction Temperature Figure 11. RDS(on) vs. Gate Voltage 1.2 40 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.4 0 −40 10 10 ID = 65 A VDD = 32 V 8 VDD = 40 V VDD = 48 V 6 4 2 0 100 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain−to−Source Voltage Figure 16. Gate Charge vs. Gate−to−Source Voltage www.onsemi.com 5 FDWS86369−F085 PACKAGE DIMENSIONS DFNW8 5.2x6.3, 1.27P CASE 507AU ISSUE A www.onsemi.com 6 FDWS86369−F085 POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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