FDZ7064AS

FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Features General Description ■ 13.5 A, 30 V. This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064AS minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). RDS(ON) = 5.6 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.76 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability. ■ ■ ■ ■ Applications ■ DC/DC converters Pin 1 D D D D D D S S S S D D S S S S D D S S S S D D G S S S D D F7064AS Pin 1 D G S Top Bottom Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation (Steady State) TJ, Tstg Operating and Storage Junction Temperature Range – Continuous Ratings Units 30 V ±20 V (Note 1a) 13.5 A (Note 1a) 2.2 W –55 to +150 °C °C/W – Pulsed 60 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 56 RθJB Thermal Resistance, Junction-to-Ball (Note 1) 4.5 RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.6 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 7064AS FDZ7064AS 13” 12mm 3000 ©2004 Fairchild Semiconductor Corporation FDZ7064AS Rev. A 1 www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET December 2004 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25°C VGS = 0 V, ID = 1mA 30 V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 uA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA mV/°C 25 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = 10mA, Referenced to 25°C 1 –0.3 1.4 3 V RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS=10 V, ID=13.5A, TJ =125°C 4.6 5.7 5.9 ID(on) On–State Drain Current VGS = 10 V,VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 13.5 A 61 S VDS = 15 V, V GS = 0 V, f = 1.0 MHz 1960 pF mV/°C 5.6 7.1 7.4 60 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance 570 pF 210 pF VGS = 15 mV, ID = 6 A 1.4 W VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 9 18 nS 12 22 nS Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 39 62 nS tf Turn–Off Fall Time 18 33 nS Qg(TOT) Total Gate Charge, Vgs = 10V 36 51 nC Qg Total Gate Charge, Vgs = 5V 20 28 nC Qgs Gate–Source Charge 5 nC Qgd Gate–Drain Charge 6 nC VDS = 15 V, ID = 13.5A Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 1) 0.4 0.7 V trr Diode Reverse Recovery Time nS Diode Reverse Recovery Charge IF = 13.5 A, diF/dt = 300 A/µs See Diode Characteristic, page 5 23 Qrr 21 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. b) 119˚C/W when mounted on a minimum pad of 2 oz copper a) 56˚C/W when mounted on a 1in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Electrical Characteristics TA = 25˚C unless otherwise noted 60 2.25 ID, DRAIN CURRENT (A) 50 3.0V 3.5V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10.0V 4.5V 40 30 20 2.5V 10 1.75 3.5V 1.5 4.0V 4.5V 1.25 6.0V 10.0V 1 0.75 0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 0 1 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.02 ID =6.8A ID = 13.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 2 1.2 1 0.8 0.0175 0.015 0.0125 0.01 TA = 125°C 0.0075 0.005 TA = 25°C 0.6 0.0025 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) 100 125 2 Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 40 30 TA = 125°C -55°C 20 10 25°C 0 10 TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 1 1.5 2 2.5 3 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.4 0.6 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDZ7064AS Rev. A 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Typical Characteristics 3000 f = 1MHz VGS = 0 V ID = 13.5A 2500 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 10V 6 20V 4 15V 2000 Ciss 1500 Coss 1000 2 500 Crss 0 0 0 10 20 30 0 40 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1000 1ms RDS(ON) LIMIT 10ms 10 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 119°C/W 0.1 DC TA = 25°C 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 119°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 119°C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Typical Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. SyncFET Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064AS. CURRENT : 0.4A/div IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 125°C 0.001 TA = 100°C 0.0001 TA = 25°C 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDZ7064AS SyncFET body diode reverse recovery characteristic. CURRENT : 0.4A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET . TIME : 12.5ns/div Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic. 5 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Typical Characteristics 4.00±0.15 0.30 INDEX SLOT GATE CL CL 1 2 3 4 5 6 A SOURCE B 0.65 CL C DRAIN D 2.60 3.60±0.20 E 0.65 2.60 TOP VIEW LAND PATTERN RECOMMENDATION 0.76 MAX 0.25^0.15 SOLDER BALL, 0.30±0.03 0.30 SOLDER BALL CL 0.10 FRONT VIEW E 2.60 D 0.51 BALL CL C 0.65 B INDEX SLOT (HIDDEN) A 1 2 3 4 5 6 SEATING PLANE 0.65 SIDE VIEW GATE 3.25 NOTES: UNLESS OTHERWISE SPECIFIED BOTTOM VIEW A) ALL DIMENSIONS ARE IN MILLIMETERS. B) NO JEDEC REGISTRATION REFERENCE AS OF JULY 1999. 6 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET Dimensional Outline and Pad Layout The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 7 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET TRADEMARKS