FFSB0665B-F085

Silicon Carbide Schottky Diode 650 V, 6 A FFSB0665B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com VRRM IF 650 V 6.0 A Features • • • • • • • • Max Junction Temperature 175°C Avalanche Rated 24.5 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1., 3. Cathode 2. Anode Schottky Diode 3 1 Applications 2 D2PAK−2 TO−263 CASE 418BK • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V) Continuous Rectified Forward Current @ TC < 150 Non−Repetitive Peak Forward Surge Current TC = 25°C tP = 10 ms Value Unit VRRM 650 V EAS 24.5 mJ IF 6.0 A @ TC < 135 &Z&3&K FFSB 0665B 8.0 IFM TC = 150°C tP = 10 ms A 523 467 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 45 A Power Dissipation TC = 25°C Ptot 61 W TC = 150°C Operating Junction and Storage Temperature Range MARKING DIAGRAM = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION 10 TJ, Tstg &Z &3 &K FFSB0665B −55 to +175 °C See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2019 August, 2020 − Rev. 1 1 Publication Order Number: FFSB0665B−F085/D FFSB0665B−F085 THERMAL CHARACTERISTICS Parameter Symbol Value Unit RqJC 2.46 °C/W Thermal Resistance, Junction−to−Case, Max. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions VF Min Typ Max Unit IF = 6.0 A, TJ = 25°C 1.38 1.7 V IF = 6.0 A, TJ = 125°C 1.53 2.0 IF = 6.0 A, TJ = 175°C 1.67 2.4 VR = 650 V, TJ = 25°C 0.5 40 VR = 650 V, TJ = 125°C 1.0 80 VR = 650 V, TJ = 175°C 2.0 160 QC VC = 400 V 16 nC Ctot VR = 1 V, f = 100 kHz 259 pF VR = 200 V, f = 100 kHz 29 VR = 400 V, f = 100 kHz 22 ON CHARACTERISTICS Forward Voltage Reverse Current IR mA CHARGES, CAPACITANCES & GATE RESISTANCE Total Capacitive Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number FFSB0665B−F085 Top Marking Package FFSB0665B D2PAK Packing Method Tape & Reel† Reel Size Tape Width Quantity 330 mm 24 mm 800 Units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSB0665B−F085 TYPICAL CHARACTERISTICS TJ = −55o C TJ = 25 o C 9 TJ = 75 o C I R , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 12 TJ = 175 o C TJ = 125o C 6 3 0 0.0 0.5 1.0 1.5 2.0 2.5 10 −6 10 −7 TJ = 175 o C 10 TJ = 75 o C TJ = 25 o C TJ = −55o C 10 3.0 TJ = 125o C −8 −9 0 100 V F , FORWARD VOLTAGE (V) 500 600 650 80 P TOT , POWER DISSIPATION (W) I F , PEAK FORWARD CURRENT (A) 400 Figure 2. Reverse Characteristics 80 D = 0.1 60 D = 0.2 40 D = 0.3 D = 0.5 20 D = 0.7 D = 1 25 50 75 100 125 150 T C , CASE TEMPERATURE ( o C) 60 40 20 0 175 25 Figure 3. Current Derating 50 75 100 125 150 TC , CASE TEMPERATURE ( o C) 175 Figure 4. Power Derating 25 1000 20 CAPACITANCE (pF) Q C , CAPACITIVE CHARGE (nC) 300 V R , REVERSE VOLTAGE (V) Figure 1. Forward Characteristics 0 200 15 10 5 0 0 100 200 300 400 500 100 10 600 650 V R , REVERSE VOLTAGE (V) 0.1 1 10 100 V R , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSB0665B−F085 TYPICAL CHARACTERISTICS E C , CAPACITIVE ENERGY ( mJ) 6 4 2 0 0 100 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 0.001 −6 10 D=0.01 SINGLE PULSE 10 −5 10 −4 10 −3 10 −2 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response www.onsemi.com 4 10 −1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK2 (TO−263−2L) CASE 418BK ISSUE O DATE 02 AUG 2018 GENERIC MARKING DIAGRAM* XXXXXXXXG AYWW XXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON93788G D2PAK2 (TO−263−2L) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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