Silicon Carbide Schottky
Diode
650 V, 20 A
FFSD2065B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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1, 2, 4 Cathode
Schottky Diode
Features
•
•
•
•
•
•
•
3 Anode
Max Junction Temperature 175°C
Avalanche Rated 94 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DPAK3 (TO−252, 3 LD)
CASE 369AS
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuit
MARKING DIAGRAM
$Y&Z&3&K
FFS
D2065B
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, Unless otherwise specified)
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
650
V
Single Pulse Avalanche Energy (Note 1)
94
mJ
Continuous Rectified Forward Current
@ TC < 143°C
20
A
Continuous Rectified Forward Current
@ TC < 135°C
23.4
Non−Repetitive
Peak Forward
Surge Current
TC = 25°C, 10 ms
763
TC = 150°C, 10 ms
650
Non−Repetitive
Forward Surge
Current
Half−Sine Pulse,
tp = 8.3 ms
80
Power Dissipation
TC = 25°C
160
TC = 150°C
27
Symbol
VRRM
EAS
IF
IF, Max
IF, SM
Ptot
TJ, TSTG Operating and Storage Temperature
Range
A
A
$Y
&Z
&3
&K
FFSD2065B
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
W
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V.
© Semiconductor Components Industries, LLC, 2019
October, 2020 − Rev. 3
1
Publication Order Number:
FFSD2065B/D
FFSD2065B
THERMAL CHARACTERISTICS
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max.
Ratings
Unit
0.94
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping†
FFSD2065B
FFSD2065B
DPAK3
(Pb−Free / Halogen Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol
VF
IR
QC
C
Parameter
Forward Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
IF = 20 A, TC = 25°C
1.38
1.7
IF = 20 A, TC = 125°C
1.6
2.0
IF = 20 A, TC = 175°C
1.72
2.4
VR = 650 V, TC = 25°C
0.5
40
VR = 650 V, TC = 125°C
1
80
VR = 650 V, TC = 175°C
2
160
Total Capacitive Charge
V = 400 V
51
nC
Total Capacitance
VR = 1 V, f = 100 kHz
866
pF
VR = 200 V, f = 100 kHz
80
VR = 400 V, f = 100 kHz
70
Reverse Current
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFSD2065B
TYPICAL CHARACTERISTICS
(TJ = 25°C Unless Otherwise Noted)
−5
TJ = 75°C
40
IR, REVERSE CURRENT (A)
TJ = 25°C
TJ = 175°C
TJ = 125°C
20
0
IF, PEAK FORWARD CURRENT (A)
10
TJ = −55°C
−6
10
TJ = 175°C
−7
10
TJ = 125°C
TJ = 75°C
TJ = 25°C
−8
10
TJ = −55°C
−9
0.0
0.5
1.0
1.5
2.0
2.5
10
3.0
100
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
180
200
D = 0.1
150
D = 0.2
100 D = 0.3
D = 0.5
50
D = 0.7
0
25
D=1
50
75
100
125
150
120
60
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (5C)
TC, CASE TEMPERATURE (5C)
Figure 3. Current Derating
Figure 4. Power Dissipation
90
5000
1000
CAPACITANCE (pF)
QC, CAPACITANCE CHARGE (nC)
200
VF, FORWARD VOLTAGE (V)
PTOT, POWER DISSIPATION (W)
IF, FORWARD CURRENT (A)
60
60
30
100
0
0
100
200
300
400
500
50
0.1
600 650
1
10
100
650
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSD2065B
TYPICAL CHARACTERISTICS (continued)
(TJ = 25°C Unless Otherwise Noted)
EC, CAPACITIVE ENERGY (mJ)
20
15
10
5
0
0
100
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
SINGLE PULSE
0.001
−6
10
−5
−4
10
−3
10
−2
10
1
−1
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO−252 3 LD)
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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