FGA30S120P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA30S120P 1300 V、 30 A 阳极短路 IGBT 特性 概述 • 高速开关 飞兆半导体的阳极短路沟道 IGBT 采用先进的场截止沟道和阳极 短路技术，为软开关应用提供卓越的导通和开关性能。该器件可 并联配置，具有极佳的雪崩能力。该器件为感应加热和微波炉而 设计。 • 低饱和电压：VCE(sat) =1.75 V @ IC=30 A • 高输入阻抗 • 符合 RoHS 标准 应用 • 感应加热，微波炉 C G TO-3PN E G C E 绝对最大额定值 T C= 25°C 除非另有说明 额定值 单位 VCES 符号 集电极 - 发射极之间电压 1300 V VGES 栅极－发射极间电压 ±25 V IC 说明 集电极电流 @ TC = 25°C 60 A 集电极电流 @ TC = 100°C 30 A 150 A ICM (1) 集电极脉冲电流 IF 二极管正向连续电流 @ TC = 25°C 60 A IF 二极管正向连续电流 @ TC = 100°C 30 A 最大功耗 @ TC = 25°C 348 W 最大功耗 @ TC = 100°C 174 W PD TJ 工作结温 -55 至 +175 °C Tstg 存储温度范围 -55 至 +175 °C TL 用于焊接 的最大引脚温度，距离外壳 1/8"，持续 5 秒 300 °C 热性能 典型值 最大值 单位 RJC(IGBT) 符号 结点 - 壳体的热阻 参数 -- 0.43 °C/W RJA 结至环境热阻 -- 40 °C/W 注意： 1: 受限于最大结温 ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 1 www.fairchildsemi.com FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 2016 年 5 月 器件编号 顶标 封装 包装方法 卷尺寸 带宽 数量 FGA30S120P FGA30S120P TO-3P 塑料管 不适用 不适用 30 IGBT 电气特性 T C= 25°C 除非另有说明 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage ICES 集电极切断电流 VCE = 1300, VGE = 0 V - IGES G-E 漏电流 VGE = VGES, VCE = 0 V - G-E 阈值电压 IC = 30 mA, VCE = VGE VGE = 0 V, IC = 1mA 1300 - - V - 1.3 - V/oC - 1 mA - ±500 nA 导通特性 VGE(th) VCE(sat) VFM 集电极 - 发射极间饱和电压 二极管正向电压 4.5 6.0 7.5 V IC = 30 A, VGE = 15 V TC = 25°C - 1.75 2.3 V IC = 30 A, VGE = 15 V, TC = 125°C - 1.85 - V IC = 30 A, VGE = 15 V, TC = 175°C - 1.9 - V IF = 30 A, TC = 25°C - 1.7 2.2 V IF = 30 A, TC = 175°C - 2.1 - V - 3345 - pF 动态特性 Cies 输入电容 Coes 输出电容 - 75 - pF Cres 反向传输电容 - 60 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz 开关特性 td(on) 导通延迟时间 - 39 - ns tr 上升时间 - 360 - ns td(off) 关断延迟时间 - 620 - ns tf 下降时间 - 160 - ns Eon 导通开关损耗 Eoff 关断开关损耗 Ets td(on) VCC = 600 V, IC = 30 A, RG = 10 , VGE = 15 V, 感性负载 , TC =25°C - 1.3 - mJ - 1.22 - mJ 总开关损耗 - 2.52 - mJ 导通延迟时间 - 38 - ns tr 上升时间 - 375 - ns td(off) 关断延迟时间 - 635 - ns tf 下降时间 - 270 - ns Eon 导通开关损耗 - 1.59 - mJ Eoff 关断开关损耗 - 1.78 - mJ Ets 总开关损耗 - 3.37 - mJ - 78 - nC - 4.2 - nC - 33.3 - nC Qg 总栅极电荷 Qge 栅极－发射极间电荷 Qgc 栅极－集电极间电荷 ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 VCC = 600 V, IC = 30 A, RG = 10 , VGE = 15 V, 电阻性负载， TC =175°C VCE = 600 V, IC = 30 A, VGE = 15 V 2 www.fairchildsemi.com FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 封装标识与定购信息 图 1. 典型输出特性 200 图 2. 典型输出特性 200 o 20V TC = 25 C o 15V 20V T C = 175 C 15V 160 Collector Current, IC [A] Collector Current, IC [A] 12V VGE = 17V 10V 120 80 9V 40 12V 160 VGE = 17V 120 10V 80 9V 8V 40 8V 7V 7V 0 0.0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 图 3. 典型饱和电压特性 200 Common Emitter VCE = 20V o Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C o TC = 175 C 120 80 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] o 120 3.0 6.0 9.0 12.0 Gate-Emitter Voltage,V GE [V] 20 Collector-Emitter Voltage, V CE [V] 60A 2.5 1.0 25 40 15.0 图 6. 饱和电压与 VGE 的关系 Common Emitter VGE = 15V 30A IC = 15A 1.5 80 0 0.0 3.5 2.0 TC = 25 C TC = 175 C 6.0 图 5. 饱和电压与壳温的关系 （不同电流强度下） 3.0 o 160 40 0 0.0 Collector-Emitter Voltage, VCE [V] 8.0 图 4. 传输特性 200 160 2.0 4.0 6.0 Collector-Emitter Voltage, V CE [V] Common Emitter o T C = 25 C 16 12 8 60A 30A 4 IC = 15A 50 ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 75 100 125 150 o Case Temperature, TC [ C] 0 175 3 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 典型性能特征 图 7. 饱和电压与 VGE 的关系 图 8. 电容特性 20 10000 Cies o T C = 175 C 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] Common Emitter 12 8 30A 1000 Coes 100 60A 4 Cres Common Emitter VGE = 0V, f = 1MHz IC = 15A o T C = 25 C 0 10 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 图 9. 栅极电荷特性 30 20 10 Collector-Emitter Voltage, V CE [V] 图 10. SOA 特性 15 Common Emitter 400V 100 600V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 VCC = 200V 9 6 3 10s 100s 10 1ms 10ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 0 0.01 0.1 30 60 Gate Charge, Qg [nC] 图 11. 导通特性与栅极电阻的关系 图 12. 关断特性与栅极电阻的关系 10000 500 Common Emitter VCC = 600V, VGE = 15V IC = 30A tr o Switching Time [ns] Switching Time [ns] 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 C o TC = 175 C td(off) 1000 tf o TC = 25 C o TC = 175 C 20 10 20 ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 30 40 50 60 Gate Resistance, RG [] 100 70 4 0 10 20 30 40 50 Gate Resistance, RG [] 60 70 www.fairchildsemi.com FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 典型性能特征 图 13. 导通特性与集电极电流的关系 图 14. 关断特性与集电极电流的关系 2500 2500 Common Emitter VGE = 15V, RG = 10 Common Emitter VGE = 15V, RG = 10 1000 TC = 25oC TC = 25oC tr o Switching Time [ns] Switching Time [ns] TC = 175 C 100 td(on) o 1000 TC = 175 C td(off) tf 100 10 20 40 20 60 Collector Current, IC [A] 图 15. 开关损耗与栅极电阻的关系 30k Common Emitter VCC = 600V, VGE = 15V TC = 25 C Switching Loss [uJ] Switching Loss [mJ] o o TC = 175 C { Common Emitter VGE = 15V, RG = 10 10k IC = 30A 1 60 图 16. 开关损耗与集电极电流的关系 10 } Eon Eoff 40 Collector Current, IC [A] o T C = 25 C T C = 175oC 1k { { Eoff Eon 0.5 100 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 0 80 图 17. 关断开关 SOA 特性 20 30 40 50 Collector Current, IC [A] 60 70 图 18. 正向特性 80 Forward Current, IF [A] 100 Collector Current, IC [A] 10 10 Safe Operating Area ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 o TJ = 175 C o TC = 25 C o TC = 175 C 1 10 100 Collector-Emitter Voltage, VCE [V] 10 1 o VGE = 15V, TC = 175 C 1 o TJ = 25 C 0.5 1000 0 5 1 Forward Voltage, VF [V] 2 www.fairchildsemi.com FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 典型性能特征 FGA30S120P — 1300 V、 30 A 阳极短路 IGBT 图 19.IGBT 的瞬态热阻抗 Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2011 飞兆半导体公司 FGA30S120P Rev. 1.10 6 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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