FGA90N33ATTU

FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.1V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V 25oC IC Collector Current @ TC = 90 A IC pulse(1) Pulsed Collector Current @ TC = 25oC 220 A Pulsed Collector Current 25oC 330 A o W IC pulse(2) PD @ TC = Maximum Power Dissipation @ TC = 25 C 223 Maximum Power Dissipation @ TC = 100oC 89 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C oC 300 Thermal Characteristics Symbol Parameter Typ. Max. Units oC/W RθJC(IGBT) Thermal Resistance, Junction to Case - 0.56 RθJA Thermal Resistance, Junction to Ambient - 40 o C/W Notes: (1) Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D