FGH30S150P

IGBT - Shorted-anode 1500 V, 30 A FGH30S150P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. www.onsemi.com C Features • • • • G High Speed Switching Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A High Input Impedance This Device is Pb−Free and is RoHS Compliant E E Applications C G • Induction Heating, Microwave Oven COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH30S 150P $Y &Z &3 &K FGH30S150P = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev. 2 1 Publication Order Number: FGH30S150P/D FGH30S150P ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Unit Collector to Emitter Voltage VCES 1500 V Gate to Emitter Voltage VGES ±25 V IC 60 A Description Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current Diode Continuous Forward Current TC = 25°C Diode Continuous Forward Current TC = 100°C Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C 30 A ICM (Note 1) 90 A IF 60 A 30 A 500 W 250 W PD Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by Tjmax. THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction to Case, Max Symbol Typ Max Unit RJC(IGBT) − 0.3 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient, Max PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Quantity FGH30S150P FGH30S150P TO−247 − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 1500 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 1 mA − 1.5 − V/°C Collector Cut−Off Current ICES VCE = 1500, VGE = 0 V − − 1 mA G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±500 nA G−E Threshold Voltage VGE(th) IC = 30 mA, VCE = VGE 4.5 6.0 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 30 A, VGE = 15 V, TC = 25°C − 1.85 2.4 V IC = 30 A, VGE = 15 V, TC = 125°C − 2.06 − V IC = 30 A, VGE = 15 V, TC = 175°C − 2.15 − V IF = 30 A, TC = 25°C − 1.61 2.2 V IF = 30 A, TC = 175°C − 1.96 − V ON CHARACTERISTICs Diode Forward Voltage VFM www.onsemi.com 2 FGH30S150P ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 3310 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 70 − pF Reverse Transfer Capacitance Cres − 55 − pF − 32 − ns − 292 − ns td(off) − 492 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 600 V, IC = 30 A, RG = 10  VGE = 15 V, Resistive Load, TC = 25°C tf − 214 − ns Turn−On Switching Loss Eon − 1.16 − mJ Turn−Off Switching Loss Eoff − 0.9 − mJ Total Switching Loss Ets 2.06 − mJ Turn−On Delay Time td(on) − 36 − ns − 336 − ns td(off) − 560 − ns tf − 520 − ns Turn−On Switching Loss Eon − 1.39 − mJ Turn−Off Switching Loss Eoff − 1.86 − mJ Total Switching Loss Ets − 3.25 − mJ Total Gate Charge Qg − 369 − nC Gate to Emitter Charge Qge − 23.5 − nC Gate to Collector Charge Qgc − 199 − nC Rise Time Turn−Off Delay Time Fall Time tr VCC = 600 V, IC = 30 A, RG = 10  VGE = 15 V, Resistive Load, TC = 175°C VCE = 600 V, IC = 30 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH30S150P TYPICAL PERFORMANCE CHARACTERISTICS 20 V TC = 25°C 200 15 V VGE = 17 V 160 Collector Current, IC [A] Collector Current, IC [A] 200 12 V 120 80 10 V 9V 40 TC = 175°C 20 V 7V 4 6 2 Collector−Emitter Voltage, VCE [V] 120 12 V 80 10 V 9V 40 8V 7V 0 8 200 160 Common Emitter VCE = 20 V TC = 25°C TC = 175°C Collector Current, IC [A] 160 120 80 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 40 0 80 40 0 8 2 4 6 Collector−Emitter Voltage, VCE [V] 120 0 Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 60 A 3 30 A 2 IC = 15 A 50 75 6 9 12 15 Gate−Emitter Voltage, VGE [V] 18 20 Common Emitter VGE = 15 V 25 3 Figure 4. Transfer Characteristics 4 1 8 Figure 2. Typical Output Characteristics 200 Collector Current, IC A] 6 4 2 Collector−Emitter Voltage, VCE [V] 0 Figure 1. Typical Output Characteristics 0 15 V 160 8V 0 17 V 100 125 150 16 12 Collector −Emitter Case Temperature, TC [°C] 30 A 8 IC = 15 A 60 A 4 0 175 Common Emitter TC = 25°C 4 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 20 FGH30S150P TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10000 Common Emitter TC = 175°C 16 Cies Capacitance [pF] Collector−Emitter Voltage, VCE [V] 20 12 30 A 8 60 A 4 0 1000 10 Gate−Emitter Voltage, VGE [V] 5 10 15 20 25 Collector−Emitter Voltage, VCE [V] Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristic 16 12 8 4 20 400 V VCC = 200 V 9 DC 600 V 6 3 0 80 160 240 320 Gate Charge, Qg [nC] 1 0.1 10000 Switching Time [ns] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 600 V, VGE = 15 V IC = 30 A TC = 25°C TC = 175°C 30 40 50 60 Gate Resistance, RG [] *Notes: 1.TC = 25°C 1. TJ = 175°C 3. Single Pulse 10 100 1000 3000 Collector−Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 1000 20 1 ms 100 s 10 ms 0.01 1 400 50 s 10 Figure 9. Gate Charge Characteristics 10 30 200 100 Collector Current, IC [A] Gate−Emitter Voltage, VGE [V] Common Emitter TC = 25°C 12 10 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C IC = 15 A 15 0 Coes 100 Common Emitter VCC = 600 V, VGE = 15 V IC = 30 A TC = 25°C TC = 175°C td(off) 1000 tf 100 10 70 20 30 40 50 60 70 Gate Resistance, RG [] Figure 12. Turn−Off Characteristics vs. Gate Resistance Figure 11. Turn−On Characteristics vs. Gate Resistance www.onsemi.com 5 FGH30S150P TYPICAL PERFORMANCE CHARACTERISTICS (continued) 4000 1000 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C tf tr Switching Time [ns] Switching Time [ns] 1000 100 td(on) 10 10 20 Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C 100 50 60 30 40 50 Collector Current, IC [A] td(off) 10 Eoff 1 0.5 10 20 1 Eoff Common Emitter VGE = 15 V, RG = 10  TC = 25°C TC = 175°C 20 40 50 30 Collector Current, IC [A] 60 Figure 16. Switching Loss vs. Collector Current 100 60 Forward Current, IF [A] Collector Current, IC [A] Eon 0.05 10 60 30 40 50 Gate Resistance, RG [] Figure 15. Switching Loss vs. Gate Resistance 10 Safe Operating Area VGE = 15 V, TC = 175°C 1 60 5 Switching Loss [mJ] Switching Loss [mJ] 10 Eon 30 40 50 Collector Current, IC [A] Figure 14. Turn−Off Characteristics vs. Collector Current Figure 13. Turn−On Characteristics vs. Collector Current Common Emitter VCC = 600 V, VGE = 15 V IC = 30 A TC = 25°C TC = 175°C 20 1 10 100 TJ = 25°C TJ = 175°C 10 1 0.5 1000 Collector−Emitter Voltage, VCE [V] TJ = 25°C TJ = 175°C 0 1 2 Forward Voltage, VF [V] Figure 18. Forward Characteristics Figure 17. Turn−Off Switching SOA Characteristics www.onsemi.com 6 3 FGH30S150P TYPICAL PERFORMANCE CHARACTERISTICS (continued) Thermal Response [Zjc] 0.4 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 7E−3 1E−5 1E−4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 19. Transient Thermal Impedance of IGBT www.onsemi.com 7 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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