Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FGH60N60SMD
600 V, 60 A Field Stop IGBT
Features
General Description
o
• Maximum Junction Temperature: TJ = 175 C
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Description
Ratings
Unit
Collector to Emitter Voltage
600
V
Gate to Emitter Voltage
20
V
Transient Gate-to-Emitter Voltage
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
Pulsed Collector Current
o
30
V
120
A
60
A
180
A
Diode Forward Current
@ TC = 25 C
60
A
Diode Forward Current
@ TC = 100oC
30
A
180
A
Maximum Power Dissipation
@ TC = 25oC
600
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
W
-55 to +175
o
C
-55 to +175
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
1
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
November 2013
Symbol
Parameter
Typ.
Max.
Unit
oC/W
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.25
RJC(Diode)
Thermal Resistance, Junction to Case
-
1.1
o
RJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
C/W
Package Marking and Ordering Information
Part Number
Top Mark
FGH60N60SMD
FGH60N60SMD
Package Packing Method
TO-247
Electrical Characteristics of the IGBT
Symbol
Parameter
Reel Size
Tape Width
Quantity
N/A
N/A
30
Tube
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 A, VCE = VGE
3.5
4.5
6.0
V
IC = 60 A, VGE = 15 V
-
1.9
2.5
V
IC = 60 A, VGE = 15 V,
TC = 175oC
-
2.1
-
V
-
2915
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
270
-
pF
-
85
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
18
27
ns
tr
Rise Time
-
47
70
ns
td(off)
Turn-Off Delay Time
-
104
146
ns
tf
Fall Time
-
50
68
ns
Eon
Turn-On Switching Loss
-
1.26
1.94
mJ
Eoff
Turn-Off Switching Loss
-
0.45
0.6
mJ
VCC = 400 V, IC = 60 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
1.71
2.54
mJ
td(on)
Turn-On Delay Time
-
18
-
ns
tr
Rise Time
-
41
-
ns
td(off)
Turn-Off Delay Time
-
115
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.78
-
mJ
Ets
Total Switching Loss
-
2.88
-
mJ
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
VCC = 400 V, IC = 60 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 175oC
2
-
48
-
ns
-
2.1
-
mJ
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Min.
Typ.
Max
Unit
-
189
284
nC
-
20
30
nC
-
91
137
nC
Min.
Typ.
Max
Unit
TC = 25 C
-
2.1
2.7
TC = 175oC
-
1.7
-
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400 V, IC = 60 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
o
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
TC = 175oC
-
79
-
trr
Diode Reverse Recovery Time
TC = 25oC
-
30
39
TC = 175oC
-
72
-
Qrr
Diode Reverse Recovery Charge
TC = 25oC
-
44
62
o
-
238
-
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
IF = 30 A
IF =30 A, diF/dt = 200 A/s
TC = 175 C
3
V
uJ
ns
nC
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
180
20V
15V
o
TC = 25 C
180
o
TC = 175 C
12V
150
120
90
60
VGE = 8V
10V
90
VGE = 8V
60
30
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Transfer Characteristics
180
180
Common Emitter
VGE = 15V
o
TC = 25 C
o
TC = 175 C
120
Common Emitter
VCE = 20V
150
Collector Current, IC [A]
150
Collector Current, IC [A]
12V
120
30
90
60
o
TC = 25 C
o
TC = 175 C
120
90
60
30
30
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
2
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3.0
120A
2.5
60A
2.0
IC = 30A
1.5
1.0
25
50
75
100
125
150
o
Case Temperature, TC [ C]
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
3.5
Collector-Emitter Voltage, VCE [V]
20V
15V
150
10V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
o
TC = -40 C
16
12
8
60A
4
120A
4
IC = 30A
0
175
Common Emitter
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
T C = 25 C
16
12
8
60A
120A
4
IC = 30A
0
o
TC = 175 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
60A
8
12
16
Gate-Emitter Voltage, V GE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
7000
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
o
Gate-Emitter Voltage, VGE [V]
6000
o
TC = 25 C
Capacitance [pF]
IC = 30A
0
4
120A
4
5000
4000
Cies
3000
2000
Coes
1000
TC = 25 C
12
VCC = 200V
300V
9
400V
6
3
Cres
0
0.1
1
10
Collector-Emitter Voltage, VCE [V]
0
30
0
Figure 11. SOA Characteristics
80
120
160
Gate Charge, Qg [nC]
200
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
300
10s
100
80
tr
100s
1ms
10 ms
DC
10
60
Switching Time [ns]
Collector Current, Ic [A]
40
1
*Notes:
o
0.1
40
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
20
1. TC = 25 C
o
TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
o
TC = 175 C
10
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
0
1000
5
10
20
30
40
Gate Resistance, RG [ ]
50
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
Common Emitter
VGE = 15V, RG = 3
o
TC = 25 C
o
Switching Time [ns]
1000
Switching Time [ns]
TC = 25 C
o
TC = 175 C
td(off)
100
tf
o
TC = 175 C
100
td(on)
10
1
10
0
10
20
30
Gate Resistance, RG []
40
0
50
30
60
120
Figure 16. Switching Loss vs.
Gate Resistance
1000
5
Eon
Switching Loss [mJ]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 3
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
1
0
30
60
90
0.1
120
0
10
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
20
30
40
Gate Resistance, RG [ ]
50
Figure 18. Turn off Switching
SOA Characteristics
10
300
100
Collector Current, IC [A]
Eon
Switching Loss [mJ]
90
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Switching Time [ns]
tr
1
Eoff
0.1
Common Emitter
VGE = 15V, RG = 3
o
TC = 25 C
10
Safe Operating Area
o
o
TC = 175 C
VGE = 15V, TC = 175 C
0.01
0
30
60
90
1
120
1
Collector Current, IC [A]
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequency
130
110
Square Wave
160
100
Collector Current, IC [A]
Collector Current, IC [A]
180
Common Emitter
VGE = 15V
120
90
80
70
60
50
40
30
o
TJ < 175 C, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 3
140
120
100
o
Tc = 75 C
80
o
Tc = 100 C
60
40
20
20
10
25
50
75
100
125
150
o
Case Temperature, TC [ C]
0
1k
175
Figure 21. Forward Characteristics
10k
100k
Switching Frequency, f [Hz]
1M
Figure 22. Reverse Current
10000
200
o
TC = 175 C
100
1000
o
Reverse Current, IR [uA]
Forward Current, IF [A]
TC = 175 C
o
TC = 125 C
o
10
TC = 75 C
o
TC = 25 C
o
TC = 25 C
o
TC = 75 C ---o
TC = 125 C ----
100
o
TC = 125 C
10
o
TC = 75 C
1
0.1
o
TC = 25 C
o
TC = 175 C
1
0
1
2
3
Forward Voltage, VF [V]
0.01
4
0
Figure 23. Stored Charge
200
300
400
Reverse Voltage,VR [V]
500
600
Figure 24. Reverse Recovery Time
100
350
o
o
TC = 25 C
o
300
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [nC]
100
TC = 175 C ----
250
200
150
100
diF/dt = 200A/s
diF/dt = 100A/s
50
0
0
10
20
30
40
Forward Current, IF [A]
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
50
TC = 25 C
90
o
TC = 175 C ----
80
70
60
diF/dt = 100A/s
50
diF/dt = 200A/s
40
30
20
60
0
7
10
20
30
40
Forward Current, IF [A]
50
60
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics
Figure 25.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 26.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 single pulse
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
8
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Mechanical Dimensions
Figure 27. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
9
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGH60N60SMD Rev. C1
10
www.fairchildsemi.com
FGH60N60SMD — 600 V, 60 A Field Stop IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
Build it Now™
GreenBridge™
PowerXS™
TinyBoost®
CorePLUS™
Programmable Active Droop™
Green FPS™
TinyBuck®
®
CorePOWER™
QFET
Green FPS™ e-Series™
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
SmartMax™
MICROCOUPLER™
ESBC™
TRUECURRENT®*
SMART
START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
4.82
E
4.58
15.87
E
15.37
A
12.81 E
4.13
3.53
6.85
6.61
5.58
E
5.34
5.20
4.96
B
3.65
E
3.51
M
0.254
B A M
1.35
0.51
20.82
E
20.32
1
2
3
3
1.87
1.53 (2X)
3.93
E
3.69
13.08 MIN
16.25
E
15.75
1.60
2.77
2.43
0.71
0.51
5.56
2.66
2.29
1.35
1.17
11.12
0.254 M
B A M
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
