FGY75T95LQDT

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode. www.onsemi.com Features • • • • • • • Maximum Junction Temperature : TJ = 175℃ Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A Fast Switching Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant 75 A, 950 V VCESat = 1.31 V (Typ.) C G Applications • Solar Inverter E MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 950 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V G IC 150 75 A Pulsed Collector Current (Note 1) ILM 225 A Pulsed Collector Current (Note 2) ICM 225 A IF 150 75 A Pulsed Diode Forward Current (Note 2) IFM 225 A Maximum Power Dissipation @TC = 25°C @TC = 100°C PD 453 226 W TJ, TSTG −55 to +175 °C TL 300 °C Collector Current Diode Forward Current @TC = 25°C @TC = 100°C @TC = 25°C @TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5 seconds C E TO−247−3LD CASE 340CD MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 700 V, VGE = 15 V, IC = 225 A, RG = 26 W, Inductive Load, 100% Tested 2. Pulse width limited by max Junction temperature. Defined by design. Not subject to production test $Y&Z&3&K FGY75T95 LQDT $Y &Z &3 &K FGY75T95LQDT = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = 2−Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2019 May, 2020 − Rev. P1 1 Publication Order Number: FGY75T95LQDT/D FGY75T95LQDT ORDERING INFORMATION Part Number Top Marking Package Shipping FGY75T95LQDT FGY75T95LQDT TO−247−3LD (Pb-Free) 30 Units / Rail THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.33 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.23 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 950 Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES DTJ Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 950 V ICES 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES ±400 nA VGE = VCE, IC = 75 mA VGE(th) 4.57 6.4 V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCE(sat) 1.31 1.52 1.69 V Cies 15400 Coes 266 OFF CHARACTERISTICS V V/°C 0.96 ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage 3.4 DYNAMIC CHARACTERISTICS Input capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Output capacitance Reverse transfer capacitance Cres 85.3 Qg 663.3 Gate to emitter charge Qge 76.1 Gate to collector charge Qgc 218.6 Gate charge total VCE = 600 V, IC = 75 V, VGE = 15 V pF nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time TJ = 25°C VCC = 600 V, IC = 37.5 A Rg = 4.7 W VGE = 15 V Inductive Load Fall time td(on) tr td(off) tf Turn−on switching loss Eon Turn−off switching loss Eoff Total switching loss Ets www.onsemi.com 2 52.0 ns 24.0 496.0 108.0 2.0 1.8 3.7 mJ FGY75T95LQDT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Turn−on delay time Rise time Turn−off delay time Test Conditions Symbol TJ = 25°C VCC = 600 V, IC = 75 A Rg = 4.7 W VGE = 15 V Inductive Load td(on) Fall time tr td(off) tf Turn−on switching loss Eon Turn−off switching loss Eoff Total switching loss Ets Turn−on delay time Rise time Turn−off delay time TJ = 175°C VCC = 600 V, IC = 37.5 A Rg = 4.7 W VGE = 15 V Inductive Load Fall time td(on) tr td(off) tf Turn−on switching loss Eon Turn−off switching loss Eoff Total switching loss Ets Turn−on delay time Rise time Turn−off delay time TJ = 175°C VCC = 600 V, IC = 75 A Rg = 4.7 W VGE = 15 V Inductive Load Fall time td(on) tr td(off) tf Turn−on switching loss Eon Turn−off switching loss Eoff Total switching loss Ets Min Typ Max 52.0 Unit ns 52.0 476.0 76.0 4.8 mJ 3.3 8.1 44.0 ns 30.0 580.0 144.0 3.8 mJ 2.7 6.5 48.0 ns 54.0 548.0 118.0 7.6 mJ 5.1 12.7 DIODE CHARACTERISTICS Forward voltage Reverse Recovery Energy Reverse Recovery Time IF = 75 A IF = 75 A, TJ = 175°C VF TJ = 25°C VR = 600 V, IF = 37.5 A dIF/dt = 1000 A/ms Erec Reverse Recovery Charge Reverse Recovery Energy Reverse Recovery Time Qrr TJ = 25°C VR = 600 V, IF = 75 A dIF/dt = 1000 A/ms Reverse Recovery Charge Reverse Recovery Energy Reverse Recovery Time trr Erec trr Qrr TJ = 175°C VR = 600 V, IF = 37.5 A dIF/dt = 1000 A/ms Reverse Recovery Charge Erec trr Qrr www.onsemi.com 3 2.03 1.76 314 105 1635 2390 259 7515 454 148 2436 2.51 V uJ ns nC uJ ns nC uJ ns nC FGY75T95LQDT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Reverse Recovery Energy Reverse Recovery Time Test Conditions Symbol TJ = 175°C VR = 600 V, IF = 75 A dIF/dt = 1000 A/ms Erec Reverse Recovery Charge trr Qrr Min Typ 2790 294 9175 Max Unit uJ ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGY75T95LQDT TYPICAL CHARACTERISTICS Figure 1. Typical Output Characteristics (TJ = 255C) Figure 2. Typical Output Characteristics (TJ = 1755C) Figure 3. Transfer Characteristics Figure 4. Typical Saturation Voltage Characteristics Figure 5. Saturation Voltage vs Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE (TJ = 255C) www.onsemi.com 5 FGY75T95LQDT TYPICAL CHARACTERISTICS Figure 7. Saturation Voltage vs. VGE (TJ = 1755C) Figure 8. Capacitance Characteristics Figure 9. Gate Charge Characteristics (TJ = 255C) Figure 10. Turn−on Characteristics vs. Gate Resistance Figure 11. Turn−off Characteristics vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGY75T95LQDT Switching Loss [mJ] TYPICAL CHARACTERISTICS Figure 14. Switching Loss vs. Gate Resistance Switching Loss [mJ] Figure 13. Turn−off Characteristics vs. Collector Current Figure 16. SOA Characteristics (FBSOA) Figure 15. Switching Loss vs. Collector Current J J J J J Figure 17. (Diode) Forward Characteristics vs (Normal I−V) Figure 18. (Diode) Reverse Recovery Current www.onsemi.com 7 FGY75T95LQDT TYPICAL CHARACTERISTICS J J J J Figure 19. (Diode) Reverse Recovery Time Figure 20. (Diode) Stored Charge Figure 21. Transient Thermal Impedance of IGBT Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CD ISSUE A DATE 18 SEP 2018 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13857G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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