FJN3303RTA

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJN3303R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 22 kΩ, R2 = 22 kΩ) Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Applications • Switching, Interface, and Driver Circuits • Inverters • Digital Applications in Industrial Segments Equivalent Circuit C R1 B TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Collector 3. Base R2 3 E Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method FJN3303RTA R3303 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 50 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation FJN3303R Rev. 1.4 www.fairchildsemi.com FJN3303R — NPN Epitaxial Silicon Transistor with Bias Resistor October 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD Value Unit Power Dissipation Parameter 300 mW Derate Above TA = 25°C 2.4 mW/°C °C/W Thermal Resistance, Junction to Ambient 416 RθJA Note: 1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 50 V ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 5 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA VCE(sat) fT 0.1 μA 0.3 V 56 Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA VI(on) Input-On Voltage VCE = 0.3 V, IC = 5 mA Cob 0.5 V kΩ 3.0 V R1 Input Resistor 15 22 29 R1/R2 Resistor Ratio 0.9 1.0 1.1 © 2002 Fairchild Semiconductor Corporation FJN3303R Rev. 1.4 www.fairchildsemi.com 2 FJN3303R — NPN Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics(1) 1000 100 VCE = 0.3V R1 = 22 K R2 = 22 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = 5V R1 = 22K R2 = 22K 100 10 1 10 100 10 1 0.1 0.1 1000 1 IC[mA], COLLECTOR CURRENT 10 100 IC[mA], COLLECTOR CURRENT Figure 1. DS Current Gain Figure 2. Input-On Voltage 1000 300 PC[mW], POWER DISSIPATION IC [μA], COLLECTOR CURRENT 350 VCE = 5V R1 = 22K R2 = 22K 100 10 0.0 250 200 150 100 50 0 0.4 0.8 1.2 1.6 2.0 0 2.4 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE VI(off)[V], INPUT OFF VOLTAGE Figure 3. Input-Off Voltage © 2002 Fairchild Semiconductor Corporation FJN3303R Rev. 1.4 Figure 4. Power Derating www.fairchildsemi.com 3 FJN3303R — NPN Epitaxial Silicon Transistor with Bias Resistor Typical Performance Characteristics FJN3303R — NPN Epitaxial Silicon Transistor with Bias Resistor Physical Dimensions Figure 5. 3-LEAD, TO-92, MOLDED 0.200 IN-LINE SPACING LD FORM © 2002 Fairchild Semiconductor Corporation FJN3303R Rev. 1.4 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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