FJP5027TU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 1100 Units V 800 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A A ICP Collector Current (Pulse) 10 IB Base Current 1.5 A PC Collector Dissipation ( TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω tON Turn On Time tSTG Storage Time tF Fall Time Min. 1100 Typ. Max. Units V V 10 8 40 0.5 µs 3 µs 0.3 µs hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5027 Typical Characteristics 3.0 100 VCE = 5 V IB = 350mA 2.5 IC [A], COLLECTOR CURRENT o o hFE, DC CURRENT GAIN TC = 125 C 2.0 IB = 150mA 1.5 IB = 100mA 1.0 IB = 50mA TC = 75 C o TC = - 25 C o TC = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 1 0.01 8 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 100 10 IC = 5 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE o TC = 125 C 10 o TC = 75 C o TC = 25 C 1 o TC = - 25 C 0.1 0.01 0.1 1 IC = 5 IB o TC = 25 C 1 o TC = - 25 C o o TC = 125 C TC = 75 C 0.1 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 100 10 IB1=3A, RB2=0 L=1mH, VCC=20V 1 10 100 1000 ICMAX.(Pulse) 10 ICMAX(Continuous) 10ms 1ms 100µs DC 1 0.1 0.01 1E-3 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time ©2003 Fairchild Semiconductor Corporation Figure 6. Safe Operating Area Rev. A, December 2003 FJP5027 Typical Characteristics (Continued) 80 10 PC[W], POWER DISSIPATION tF, tSTG [µ s], SWITCHING TIME 70 1 0.1 IB1=45mA, IB2=-0.5A VCC=125V 60 50 40 30 20 10 0 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Characteristics ©2003 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, December 2003 SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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