FJPF13009H1TU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJPF13009 NPN Silicon Transistor Features Description • High-Voltage Capability • High Switching Speed The FJPF13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJPF13009 is available with multiple hFE bin classes for ease of design use. The FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent power dissipation. Applications • • • • Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply 1 1.Base TO-220F 2.Collector 3.Emitter Ordering Information Part Number(1) Top Mark Package Packing Method FJPF13009H1TU J13009-1 TO-220F 3L Rail FJPF13009H2TU J13009-2 TO-220F 3L Rail Notes: 1. The affix “-H1, H2” means the hFE classification. The suffix “-TU” means the tube packing method. © 2003 Fairchild Semiconductor Corporation FJPF13009 Rev. 1.2.1 www.fairchildsemi.com FJPF13009 — NPN Silicon Transistor September 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 12 A ICP Collector Current (Pulse) 24 A IB Base Current 6 A PD Total Device Dissipation (TC = 25°C) 50 W TJ Junction Temperature 150 °C -65 to +150 °C Storage Temperature Range TSTG Note: 2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations. Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) IEBO hFE1 Parameter IC = 10 mA, IB = 0 Emitter Cut-Off Current VEB = 9 V, IC = 0 DC Current Gain(3) hFE2 VCE(sat) VBE(sat) Conditions Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage(3) Base-Emitter Saturation Voltage(3) 40 30 IC = 5 A, IB = 1 A 1.0 IC = 8 A, IB = 1.6 A 1.5 IC = 12 A, IB = 3 A 3.0 IC = 5 A, IB = 1 A 1.2 IC = 8 A, IB = 1.6 A 1.6 tON Turn-On Time tSTG Storage Time VCC = 125 V, IC = 8 A, IB1 = - IB2 = 1.6 A, RL = 15.6 Ω Fall Time 1 6 VCE = 10 V, IC = 0.5 A Unit V 8 Current Gain Bandwidth Product tF Max VCE = 5 V, IC = 8 A VCB = 10 V, f = 0.1 MHz fT Typ. 400 VCE = 5 V, IC = 5 A Output Capacitance Cob Min. 180 mA V V pF 4 MHz 1.1 3.0 μs 0.7 Note: 3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 8 ~ 17 15 ~ 28 © 2003 Fairchild Semiconductor Corporation FJPF13009 Rev. 1.2.1 www.fairchildsemi.com 2 FJPF13009 — NPN Silicon Transistor Absolute Maximum Ratings(2) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 10 IC = 3 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.1 100 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10000 1000 tR, tD [ns], TURN ON TIME Cob[pF], CAPACITANCE VCC=125V IC=5IB 100 10 1 0.1 1 10 100 1000 tR tD, VBE(off)=5V 100 10 0.1 1000 VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Collector Output Capacitance 10 100 Figure 4. Turn-On Time 100 10000 10 μs 1000 10 DC s 1m tSTG s 0μ IC[A], COLLECTOR CURRENT VCC=125V IC=5IB 10 tSTG, tF [ns], TURN OFF TIME 1 IC[A], COLLECTOR CURRENT 1 0.1 tF 100 0.1 0.01 1 10 1 100 Figure 5. Turn-Off Time © 2003 Fairchild Semiconductor Corporation FJPF13009 Rev. 1.2.1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 6. Forward Bias Safe Operating Area www.fairchildsemi.com 3 FJPF13009 — NPN Silicon Transistor Typical Performance Characteristics 70 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 60 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1 0.1 50 40 30 20 10 0.01 10 0 100 1000 0 10000 50 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area © 2003 Fairchild Semiconductor Corporation FJPF13009 Rev. 1.2.1 25 o VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 8. Power Derating www.fairchildsemi.com 4 FJPF13009 — NPN Silicon Transistor Typical Performance Characteristics (Continued) B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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