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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FJV42
NPN High-Voltage Transistor
3
2
1 SOT-23
Marking: 1DF
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
Packing Method
FJV42MTF
1DF
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
350
V
VCBO
Collector-Base Voltage
350
V
VEBO
Emitter-Base Voltage
6
V
500
mA
-55 to +150
°C
Value
Unit
IC
TSTG
Collector Current
Storage Temperature Range
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Power Dissipation
350
mW
Thermal Resistance, Junction-to-Ambient
357
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
www.fairchildsemi.com
FJV42 — NPN High-Voltage Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
(2)
Conditions
Min.
Max.
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 5.0 mA, IB = 0
350
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
350
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
6
V
ICBO
Collector Cut-Off Current
VCB = 200 V, IE = 0
0.1
μA
IEBO
Emitter Cut-Off Current
VEB = 5.0 V, IC = 0
0.1
μA
IC = 20 mA, IB = 2.0 mA
0.5
V
Base-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.9
V
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Output Capacitance
VCB = 20 V, IE = 0,
f = 1.0 MHz
hFE
VCE(sat)
VBE(sat)
fT
Ccb
DC Current Gain
(2)
Collector-Emitter Saturation Voltage
(2)
(2)
IC = 1.0 mA, VCE = 10 V
25
IC = 10 mA, VCE = 10 V
40
IC = 30 mA, VCE = 10 V
40
50
MHz
3
pF
Note:
2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
www.fairchildsemi.com
2
FJV42 — NPN High-Voltage Transistor
Electrical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1000
VCE = 10V
100
10
1
10
10
IC = 10 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
1
100
10
IC[mA], COLLECTOR CURRENT
100
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
100
Ccb [pF], CAPACITANCE
IE = 0
f = 1MHz
10
1
0.1
1
10
100
VCE = 20V
80
60
40
20
0
1
100
VCB [V], COLLECTOR-BASE VOLTAGE
10
100
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
120
Figure 4. Current Gain Bandwidth Product
www.fairchildsemi.com
3
FJV42 — NPN High-Voltage Transistor
Typical Performance Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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