FJY3012R
tm
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJY4012R
Equivalent Circuit
C
C
S12
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
TSTG
Storage Temperature Range
-55~150
°C
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
Max
Units
600
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 100 uA, IE = 0
40
V
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 1mA, IB = 0
40
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
hFE
DC Current Gain
VCE = 5 V, IC = 1 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
Ccb
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
R
Input Resistor
0.1
100
0.3
250
47
V
MHz
3.7
32
uA
600
pF
62
KΩ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY3012R Rev. B
1
www.fairchildsemi.com
FJY3012R NPN Epitaxial Silicon Transistor
July 2007
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
1000
VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
R = 47K
100
10
1
10
IC = 10IB
R = 47K
100
10
1
100
1
IC[mA], COLLECTOR CURRENT
10
100
IC[mA], COLLECTOR CURRENT
Figure 3. Power Derating
280
PC[mW], POWER DISSIPATION
240
200
160
120
80
40
0
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
2
FJY3012R Rev. B
www.fairchildsemi.com
FJY3012R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJY3012R NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
FJY3012R Rev. B
www.fairchildsemi.com
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
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reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I25
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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