FOD3180V

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It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETs used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ +100°C 2A minimum peak output current High speed response: 200ns max propagation delay over temperature range 250kHz maximum switching speed 30ns typ pulse width distortion Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Under voltage lockout protection (UVLO) with hysteresis Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved RDS(ON) of 1.5Ω (typ.) offers lower power dissipation 15kV/µs minimum common mode rejection The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance. Applications ■ ■ ■ ■ ■ Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive *Requires ‘V’ ordering option Functional Block Diagram Package Outlines FOD3180 NO CONNECTION 1 8 VCC 8 ANODE 2 7 OUTPUT CATHODE 3 6 OUTPUT NO CONNECTION 4 5 VEE 1 8 8 1 Note: A 0.1µF bypass capacitor must be connected between pins 5 and 8. ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 1 www.fairchildsemi.com FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler August 2008 Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 °C TJ 260 for 10 sec. °C IF(AVG) Average Input Current(1) 25 mA IF(tr, tf) LED Current Minimum Rate of Rise/Fall 250 ns IF(TRAN) Peak Transient Input Current ( 5V VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 5V 0.8 Input Forward Voltage IF = 10mA 1.2 ∆VF / TA Temperature Coefficient of Forward Voltage IF = 10mA -1.5 mV/°C VUVLO+ UVLO Threshold VO > 5V, IF = 10mA 8.3 V VO < 5V, IF = 10mA 7.7 V 0.6 V VF VUVLO– IO = -100mA Typ.* VCC – 0.5 UVLOHYST UVLO Hysteresis BVR Input Reverse Breakdown Voltage IR = 10µA CIN Input Capacitance f = 1MHz, VF = 0V V VEE + 0.5 V 4.8 6.0 mA 5.0 6.0 mA 8.0 mA V 1.43 5 1.8 V V 60 pF *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 3 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics (DC) Over recommended operating conditions unless otherwise specified. Symbol Parameter Test Conditions Min. tPLH Propagation Delay Time to High Output Level(8) tPHL Propagation Delay Time to Low Output Level(8) IF = 10mA, Rg = 10Ω, f = 250kHz, Duty Cycle = 50%, Cg = 10nF PWD Pulse Width Distortion(9) Propagation Delay Difference Between Any PDD (tPHL – tPLH) Two Parts(10) tr Rise Time tf Fall Time tUVLO ON UVLO Turn On Delay tUVLO OFF UVLO Turn Off Delay Typ.* Max. Unit 50 135 200 ns 50 105 200 ns 65 ns 90 ns -90 CL = 10nF, Rg = 10Ω 75 ns 55 ns 2.0 µs 0.3 µs | CMH | Output High Level Common Mode Transient Immunity(11) (12) TA = +25°C, If = 10 to 16mA, VCM = 1.5kV, VCC = 20V 15 kV/µs | CML | Output Low Level Common Mode Transient Immunity(11) (13) TA = +25°C, Vf = 0V, VCM = 1.5kV, VCC = 20V 15 kV/µs *Typical values at TA = 25°C Isolation Characteristics Symbol Parameter Test Conditions VISO Withstand Isolation Voltage(14) (15) TA = 25°C, R.H. < 50%, t = 1min., II-O ≤ 20µA RI-O Resistance (input to output)(15) VI-O = 500V CI-O Capacitance (input to output) Freq. = 1MHz Min. Typ.* 5000 Max. Unit Vrms 1011 Ω 1 pF *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 4 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Switching Characteristics 7. 8. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 9. PWD is defined as | tPHL – tPLH | for any given device. 10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions. 11. Pin 1 and 4 need to be connected to LED common. 12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 5µA). 15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 5 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Notes: 1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω, frequency = 8kHz, 50% DF. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 8.5Ω, frequency = 8kHz, 50% DF. 4. Derate linearly above +87°C, free air temperature at the rate of 0.77mW/°C. Refer to Figure 12. 5. No derating required across operating temperature range. 6. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature Fig. 1 Input Forward Current vs. Forward Voltage 6 IFLH – LOW TO HIGH INPUT CURRENT THRESHOLD (mA) I F – FORWARD CURRENT (mA) 100 10 TA = -40°C TA = 100°C 1 TA = 25°C 0.1 0.01 V = 10 to 20V CC VEE = 0 Output = Open 5 4 3 2 1 0 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 2.2 -20 Fig. 3 Output Low Voltage vs. Ambient Temperature (VOH - VCC) – HIGH OUTPUT VOLTAGE DROP (V) V OL – OUTPUT LOW VOLTAGE (V) VF(OFF) = -3.0V to 0.8V IOUT = 100mA V = 10V to 20V CC VEE = 0 0.20 0.15 0.10 0.05 0.00 -40 -20 0 20 40 60 40 60 80 100 80 0.00 V CC = 10 to 20V, VEE = 0 IF = 10mA to 16mA IOUT = -100 mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 100 -40 -20 TA – AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage 6.2 6.2 V CC = 20V, VEE = 0 IF = 10mA (for ICCH) IF = 0mA (for ICCL) IF = 10mA (for ICCH) IF = 0mA (for ICCL) 5.8 I CC – SUPPLY CURRENT (mA) 5.8 I CC – SUPPLY CURRENT (mA) 20 Fig. 4 High Output Voltage Drop vs. Ambient Temperature 0.30 0.25 0 TA – AMBIENT TEMPERATURE (°C) VF – FORWARD VOLTAGE (V) 5.4 ICCL 5.0 ICCH 4.6 4.2 3.8 TA = 25oC, VEE = 0V 5.4 5.0 ICCL ICCH 4.6 4.2 3.8 -40 -20 0 20 40 60 80 100 10 TA – AMBIENT TEMPERATURE (°C) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 12 14 16 18 20 VCC – SUPPLY VOLTAGE (V) www.fairchildsemi.com 6 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves Fig. 8 Propagation Delay vs. Forward LED Current Fig. 7 Propagation Delay vs. Load Capacitance 200 200 VCC = 20V, VEE = 0 RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% t P – PROPAGATION DELAY (ns) t P – PROPAGATION DELAY (ns) 180 160 tPHL 140 120 tPLH 100 80 180 160 tPHL 140 120 tPLH 100 80 60 60 5 10 15 20 25 6 8 CG – LOAD CAPACITANCE (nF) 12 14 16 Fig. 10 Propagation Delay vs. Ambient Temperature Fig. 9 Propagation Delay vs. Series Load Resistance 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50% 180 t P – PROPAGATION DELAY (ns) t P – PROPAGATION DELAY (ns) 10 IF – FORWARD LED CURRENT (mA) 160 140 tPHL 120 tPLH 100 80 IF = 10mA RG = 10Ω, CG = 10nF f = 250kHz, D. Cycle = 50% 180 160 140 tPHL 120 tPLH 100 80 60 60 10 20 30 40 50 -40 RG – SERIES LOAD RESISTANCE (Ω) -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Fig. 11 Propagation Delay vs. Supply Voltage 180 t P – PROPAGATION DELAY (ns) IF = 10mA, TA = 25oC RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% 160 140 tPHL 120 tPLH 100 80 60 10 15 20 25 VCC – SUPPLY VOLTAGE (V) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 7 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves (Continued) Option Order Entry Identifier (Example) No option FOD3180 S FOD3180S SD FOD3180SD T FOD3180T 0.4" Lead Spacing V FOD3180V VDE 0884 TV FOD3180TV VDE 0884, 0.4" Lead Spacing SV FOD3180SV VDE 0884, Surface Mount SDV FOD3180SDV Description Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 3180 XX YY B V 3 2 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 8 www.fairchildsemi.com FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 ± 0.3 Tape Thickness 0.30 ± 0.05 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location 7.5 ± 0.1 4.0 ± 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 ± 0.1 10.30 ±0.20 B0 10.30 ±0.20 K0 4.90 ±0.20 W1 d R ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 Cover Tape Width 1.6 ± 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10° Min. Bending Radius 30 9 www.fairchildsemi.com FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications 245 C, 10–30 s Temperature (°C) 300 260 C peak 250 200 150 Time above 183C,