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FPAB20BH60B
用于单相升压功率因数校正的 PFC SPM® 3 系列
特性
概述
FPAB20BH60B 是一种先进的 PFC SPM® 3 模块，为消
费、医药和工业应用提供非常全面的高性能升压功率因数
校正输入功率平台。这些模块综合优化了内置 IGBT 的栅
极驱动以最小化电磁干扰和能量损耗。同时也提供多重模
组保护特性，集成欠压闭锁，过流保护，热量监测和故障
报告。这些模块内的全波整流器和高性能输出二极管，为
额外节省空间和方便安装起到了重要作用。
• 通过 UL 第 E209204 号认证 (UL1557)
• 600 V - 20 A 单相升压功率因数校正，包含栅极驱动和
保护的控制 IC
• 采用 DBC (Al2O3) 基板实现非常低的热阻
• 全波桥式整流器和高性能输出二极管
• 内置负温度系数热敏电阻可实现温度监测
• 针对 20 kHz 开关频率进行优化
• 绝缘等级：2500 Vrms / 分钟
应用
• 单相升压功率因数校正转换器
相关资料
• AN-9090 - PFC SPM 3 Series User’s Guide
• AN-9091 - Boost PFC Inductor Design Guide
图 1. 封装概览
封装标识与定购信息
器件
器件标识
封装
包装类型
数量
FPAB20BH60B
FPAB20BH60B
SPMIC-027
Rail
10
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
1
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
2014 年 9 月
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
集成的功率功能
• PFC 转换器，适用于单相 AC/DC 功率变换 （请参见图 3）
集成的驱动、保护和系统控制功能
• 对于 IGBT：栅极驱动电路、过流保护 (OCP)、控制电源欠压锁定 (UVLO) 保护
• 故障信号：对应 OC 和 UV 故障
• 内置热敏电阻：温度监控
• 输入接口：高电平有效接口，可用于 3.3 / 5 V 逻辑电平，施密特触发脉冲输入
引脚配置
Top View
12.205
(21)P
18.345
(1)VCC
(2)COM
(3)COM
(4)COM
(5)IN
(6)VFO
(7)CFOD
(8)CSC
(22)P
(23)N.C
(9)RTH
(10)VTH
(24)L
(11)N.C
Case Temperature (T C)
Detecting Point
(12)N.C
(25)PR
(13)N
(14)N
(15)N
(16)N
(26)R
(17)NR
(18)NR
DBC Substrate
(19)NR
(27)S
(20)NR
图 2. 俯视图
注：
1. 关于壳体温度 (TC) 的测量点，请参见图 2。
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
2
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
引脚描述
引脚号
引脚名
引脚描述
1
VCC
驱动 IC 和 IGBT 的通用偏置电压
2,3,4
COM
公共电源接地
5
IN
IGBT 信号输入
6
VFO
7
CFOD
设置故障输出持续时间的电容
8
CSC
过电流感测电容 （低通滤波器）
9
R(TH)
供热敏电阻使用的串联电阻器
10
V(TH)
热敏电阻偏压
11,12
N.C
无连接 *
13~16
N
IGBT 发射极
17~20
NR
整流器直流负端
21,22
P
23
N.C
24
L
电感器连接引脚
25
PR
整流器直流正端
26
R
R 相的交流输入
27
S
S 相的交流输入
故障输出
直流正端
无连接
* 引脚 11 和引脚 12 被切除。更多详细信息请参照产品封装外形图。
内部等效电路与输入 / 输出引脚
(10) VTH
NTC
Thermistor
(9) RTH
(8) CSC
CSC
(7) CFOD
CFOD
(6) VFO
VFO
(5) IN
IN
(21,22) P
(24) L
(25) PR
OUT
(26) R
(2~4) COM
COM
(1) VCC
VCC
(27) S
(13~16) N
(17~20) NR
图 3. 内部框图
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
3
www.fairchildsemi.com
转换器部分
符号
Vi
Vi （浪涌）
VPN
VPN （浪涌）
项目
条件
额定值
单位
电源电压
施加在 R - S 之间
264
Vrms
电源电压 （浪涌）
施加在 R - S 之间
500
V
输出电压
施加在 P - N 之间
450
V
输出电压 （浪涌）
施加在 P - N 之间
500
V
600
V
VCES
集电极 - 发射极之间电压
IC
单个 IGBT 的集电极电流
TC = 25°C, TJ < 150°C
20
A
ICP
单个 IGBT 的集电极电流 （峰值）
TC = 25°C, TJ < 150°C, 脉冲宽度小于 1ms
40
A
PC
集电极功耗
TC = 25°C
89
W
600
V
250
A
-40 ~ 150
°C
VRRM
重复反向峰值电压
IFSM
正向浪涌峰值电流
TJ
单一正弦半波
工作结温
控制部分
符号
项目
条件
额定值
单位
20
V
VCC
控制电源电压
施加在 VCC - COM 之间
VIN
输入信号电压
施加在 IN - COM 之间
-0.3 ~ VCC+0.3
V
VFO
故障输出电源电压
施加在 VFO - COM 之间
-0.3 ~ VCC+0.3
V
IFO
故障输出电流
VFO 引脚处的灌电流
5
mA
VSC
电流感测输入电压
施加在 CSC - COM 之间
-0.3 ~ VCC+0.3
V
额定值
单位
-40 ~ 125
°C
2500
Vrms
整个系统
符号
项目
TSTG
存储温度
VISO
绝缘电压
条件
60 Hz，正弦波形，交流 1 分钟，连接陶瓷基
板到引脚
热阻
符号
Rθ(j-c)Q
项目
条件
最小值 典型值 最大值
单位
IGBT
-
-
1.4
°C/W
Rθ(j-c)F
FRD
-
-
1.4
°C/W
Rθ(j-c)R
整流器 （每 1 / 4 模块）
-
-
2.1
°C/W
结点 - 壳体的热阻
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
4
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
绝对最大额定值 （TJ = 25°C，除非另有说明。）
转换器部分
符号
项目
VCE(SAT)
条件
最小值 典型值 最大值 单位
IGBT 饱和电压
VCC = 15 V, VIN = 5 V, IC = 20 A
-
2.3
3.0
V
VFF
快速恢复二极管正向电压
IF = 20 A
-
1.8
2.5
V
VFR
整流器正向电压
IF = 20 A
-
1.2
1.5
V
tON
开关时间
VPN = 400 V, VCC = 15V, IC = 20 A
VIN = 0 V ↔ 5 V，电感负载
-
450
-
ns
-
200
-
ns
-
350
-
ns
tC(OFF)
-
80
-
ns
trr
-
70
-
ns
Irr
-
6
-
A
-
-
250
μA
tC(ON)
（注 2）
tOFF
ICES
集电极 - 发射极间漏电流
VCE = VCES
注：
2. tON 和 tOFF 包括模块内部驱动 IC 的传输延迟时间。 tC(ON) 和 tC(OFF) 指在内部给定的栅极驱动条件下， IGBT 本身的开关时间。详细信息，请参见图 4。
Irr
120% of IC
100% of IC
VCE
IC
90% of IC
15% of VCE
IC
VIN
10% of IC
VCE 15% of VCE
10% of IC
VIN
tON
trr
tC(ON)
tC(OFF)
tOFF
(a) Turn-on
(b) Turn-off
图 4. 开关时间的定义
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
5
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
电气特性 （TJ = 25°C，除非另有说明。）
符号
项目
条件
最小值 典型值 最大值 单位
IQCCL
VCC 静态电源电流
VCC = 15 V, IN = 0 V VCC - COM
VFOH
故障输出电压
VFOL
-
-
26
mA
VSC = 0 V, VFO 电路：4.7 kΩ 至 5 V 上拉
4.5
-
-
V
VSC = 1 V, VFO 电路：4.7 kΩ 至 5 V 上拉
-
-
0.8
V
VSC(ref)
过电流保护触发电平
VCC = 15 V
0.45
0.5
0.55
V
UVCCD
电源电路欠压保护
检测电平
10.7
11.9
13.0
V
复位电平
11.2
12.4
13.2
V
UVCCR
tFOD
故障输出脉宽
CFOD = 33 nF （注 3）
1.4
1.8
2.0
ms
VIN(ON)
导通阈值电压
施加在 IN - COM 之间
2.8
-
-
V
VIN(OFF)
关断阈值电压
-
-
0.8
V
@ TTH = 25°C （注 4，图 5）
-
47.0
-
kΩ
@ TTH = 100°C （注 4，图 5）
-
2.9
-
kΩ
RTH
热敏电阻的阻值
注：
3. 故障输出脉宽 tFOD 取决于电容 CFOD 的值，可采用下面的近似公式进行计算：CFOD = 18.3 x 10-6 x tFOD [F]。
4. TTH 是壳体温度 (TC) 的温度，请根据具体应用进行试验。
R-T Curve
200
MIN
TYP
MAX
4
MIN
TYP
MAX
Resistance RTH[kΩ]
Resistance RTH[kΩ]
150
100
3
2
1
95
100
105
50
0
110
115
120
125
Temperature TTH[∩ ]
0
25
50
75
100
125
Temperature TTH[∩ ]
图 5. 内置热敏电阻的 R-T 曲线
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
6
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
控制部分
符号
项目
条件
最小值 典型值 最大值
单位
输入电源电压
施加在 R - S 之间
187
220
253
Vrms
VPN
输出电压
施加在 P - N 之间
-
380
400
V
VCC
控制电源电压
施加于 VCC(L) - COM 之间
13.5
15.0
16.5
V
dVCC/dt
控制电源波动
-1
-
Vi
1
V/μs
fPWM
PWM 输入频率
TJ ≤ 150°C
-
20
-
kHz
Ii
允许的输入电流
TC < 90°C, Vi = 220 V, VPN = 380 V
VPWM = 20 kHz
-
-
20
Apeak
机械特性和额定值
项目
条件
安装扭矩
安装螺钉：M3
器件平面度
见图 6
最小值 典型值 最大值
建议 0.62 N•m
重量
单位
0.51
0.62
0.72
N•m
0
-
+120
μm
-
15.00
-
g
(+)
(+)
(+)
图 6. 平面度测量位置
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
7
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
推荐工作条件
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
保护功能时序图
Input S ignal
Internal IG B T
G ate-E m itter V oltage
P3
UV
reset
P5
C ontrol S upply V oltage
P2
UV
detect
P6
P1
O utput C urrent
P4
Fault O utput S ignal
P1 : 正常工作：IGBT 导通并传导电流
P2 : 欠压检测
P3 : IGBT 栅极中断
P4 : 故障信号产生
P5 : 欠压复位
P6 : 正常工作：IGBT 导通并传导电流
图 7. 欠压保护
P5
In p u t S ig n a l
P6
In te r n a l IG B T
G a te - E m itte r V o lta g e
O C D e te c tio n
P1
P4
P7
O u tp u t C u r re n t
P2
O C R e fe r e n c e
V o lta g e ( 0 .5 V )
S e n s in g V o lta g e
R C F ilte r D e la y
F a u lt O u tp u t S ig n a l
P3
P8
P1 : 正常工作：IGBT 导通并传导电流
P2 : 过流检测
P3 : IGBT 栅极中断 / 故障信号产生
P4 : IGBT 缓慢关断
P5 : IGBT 关断信号
P6 : IGBT 导通信号：但是在故障输出有效的时间内， IGBT 不导通
P7 : IGBT 关断状态
P8 : 故障输出复位并启动正常工作
图 8. 过流保护
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
8
www.fairchildsemi.com
VTH
NTC
Thermistor
RTH
+5 V
CSC
CFOD
VFO
PFC
Controller
IN
COM
VCC
+15 V
P
L
CSC
CFOD
PR
VFO
R
OUT
IN
S
VAC
COM
VCC
N
NR
图 9. 应用实例
注：
5. 每个电容都应尽可能地靠近 PFC SPM® 产品的引脚安装。
6. 建议应当将反向并联二极管与 IGBT 相连接。
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
9
www.fairchildsemi.com
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
+5 V
FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
封装轮廓详图
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和
/ 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/dwg/MO/MOD27BE.pdf
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
10
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FPAB20BH60B 用于单相升压功率因数校正的 PFC SPM® 3 系列
©2010 飞兆半导体公司
FPAB20BH60B Rev. C4
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