FQB27N25TM_F085

N-Channel MOSFET 250 V, 25.5 A, 131 mΩ Features D „ Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A „ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 G Applications S D TO-263AB „ Automotive Engine Control TO-262AB „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering G „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Gate to Source Voltage Ratings 250 Units V ±30 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 25.5 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 972 A mJ Power Dissipation 417 W Derate above 25oC 3.3 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 150 oC 0.3 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FQB27N25TM Device FQB27N25TM-F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units FQI27N25TU FQI27N25TU-F085 TO-262AB Tube N/A 50 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 4.67mH, IAS = 20.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2014Semiconductor Components Industries, LLC. December-2017,Rev. 3 Publication Order Number: FQB27N25TM-F085/D FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET FQB27N25TM-F085/FQI27N25TU-F085 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 250V, VGS = 0V 250 - - V - - 1 μA TJ = 25oC TJ = 150oC(Note 4) VGS = ±30V - - 250 uA - - ±100 nA On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 25.5A, VGS= 10V 3.0 4.1 5.0 V - 108 131 mΩ - 265 310 mΩ TJ = 25oC TJ = 150oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 125V ID = 27A - 1800 - pF - 350 - pF - 45 - pF - 0.82 - Ω - 45 49 nC - 3.3 4 nC - 12 - nC 23 - nC Switching Characteristics ton Turn-On Time - - 196 ns td(on) Turn-On Delay - 36 - ns tr Rise Time td(off) Turn-Off Delay - 122 - ns - 81 - ns tf toff Fall Time - 60 - ns Turn-Off Time - - 164 ns VDD = 125V, ID = 27A, VGS = 10V, RGEN = 25Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse--Recovery Time Qrr Reverse--Recovery Charge ISD = 25.5A, VGS = 0V - - 1.5 V ISD = 12.75A, VGS = 0V - - 1.25 V IF = 27A, dISD/dt = 100A/μs, VDD=200V - 205 238 ns - 1.8 2.3 nC Notes: 4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 2 FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET POWER DISSIPATION MULTIPLIER Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(o C) 150 Figure 1. Normalized Power Dissipation vs. Case Temperature 10 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 0.01 1E-3 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 2. Normalized Maximum Transient Thermal Impedance www.onsemi.com 3 0 10 1 10 1000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) CURRENT AS FOLLOWS: 100 150 - TC I = I2 125 10 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Peak Current Capability 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) o TJ = 150 C TJ = 25oC TJ = -55oC 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 200 10 2 0.01 Figure 5. Unclamped Inductive Switching Capability VDD = 20V 0.1 STARTING TJ = 125oC NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1 10 1 1E-3 1000 Figure 4. Forward Bias Safe Operating Area 100 STARTING TJ = 25oC 100ms 0.1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 12 100 VGS = 0 V TJ = 150 oC TJ = 25 oC 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Forward Diode Characteristics www.onsemi.com 4 1.6 FQB27N25TM-F085/FQI27N25TU-F085 N-Channel MOSFET Typical Characteristics 80 60 60 VGS 15V Top 10V 8V 7V 6V Bottom 40 80μs PULSE WIDTH Tj=150oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80μs PULSE WIDTH Tj=25oC 20 20 6V 0 0 0 8 12 16 20 4 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 25.5A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 440 330 TJ = 150oC TJ = 25oC 220 110 0 5 8 9 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 10. RDSON vs. Gate Voltage 2.8 2.4 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.6 1.2 ID = 25.5A VGS = 10V 0.8 0.6 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. Normalized RDSON vs. Junction Temperature 1.4 1.2 5V 0 Figure 9. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 8. Saturation Characteristics 550 VGS 15V5.5V Top 10V 8V 7V 6V 5.5V 5V Bottom 40 ID = 1mA 1.1 1.0 1.0 0.8 0.9 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized Gate Threshold Voltage vs. Temperature 0.8 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature www.onsemi.com 5 FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET Typical Characteristics VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) 10000 Ciss 1000 Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 14. Capacitance vs. Drain to Source Voltage 10 ID = 27A VDD = 100V VDD = 80V 8 VDD = 120V 6 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 Figure 15. Gate Charge vs. Gate to Source Voltage www.onsemi.com 6 FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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