FQD3N60CTM_WS

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel QFET® MOSFET Description 600 V, 2.4 A, 3.4 Ω This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.4 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.2 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested D D G S G D-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) dv/dt PD TJ, TSTG TL - Pulsed Unit V 2.4 A 1.5 A 9.6 A ±30 V (Note 2) 150 mJ (Note 1) 2.4 A (Note 1) 4.0 4.5 50 0.4 -55 to +150 mJ V/ns W W/°C °C 300 °C (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD3N60CTM_WS 600 Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. ©2007 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 FQD3N60CTM_WS 2.5 Unit °C/W 110 °C/W Publication Order Number: FQD3N60CTM-WS/D FQD3N60CTM-WS — N-Channel QFET® MOSFET FQD3N60CTM-WS Device Marking FQD3N60CS Device FQD3N60CTM-WS Electrical Characteristics Symbol Package D-PAK Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 600 -- -- V -- 0.6 -- V/°C VDS = 600 V, VGS = 0 V -- -- 1 μA VDS = 480 V, TC = 125°C --- 10 100 μA nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS /ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V --- IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V 600 -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1.2A -- 2.8 3.4 Ω gFS Forward Transconductance VDS = 40V, ID = 1.2A -- 3.5 -- S VDS = 25V, VGS = 0V, f = 1.0MHz -- 435 565 pF -- 45 60 pF -- 5 8 pF VDD = 300 V, ID = 3 A, RG = 25 Ω -- 12 34 ns -- 30 70 ns -- 35 80 ns -- 35 80 ns -- 10.5 14 nC -- 2.1 -- nC -- 4.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4) VDS = 480 V, ID = 3 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A ISM -- -- 12 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0V, IS = 2.4A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 260 -- ns Qrr Reverse Recovery Charge -- 1.6 -- μC VGS = 0V, IS = 3A dIF/dt =100A/μs NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 2.4 A, VDD = 50 V, L=47 mH, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQD3N60CTM-WS — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 0 o 150 C o 25 C o -55 C ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 10 1 0 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 10 8 VGS = 10V 6 4 VGS = 20V 2 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0 -1 0 1 2 3 4 5 6 10 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Capacitances [pF] 700 600 Coss 500 Ciss 400 300 200 ※ Note ; 1. V GS = 0 V 2. f = 1 MHz Crss 100 0 -1 10 VGS, Gate-Source Voltage [V] 12 800 10 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 10A 0 10 0 10 1 0 2 4 6 8 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 10 12 FQD3N60CTM-WS — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 1.2 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.5 Operation in This Area is Limited by R DS(on) 1 2.0 10 μs ID, Drain Current [A] 100 μs 1 ms 10 10 ms 0 DC -1 10 ※ Notes : 1.5 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0.0 25 0 10 50 VDS, Drain-Source Voltage [V] 75 100 TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve ZθJC Thermal Response [oC/W] Zθ(t), (t), Thermal Response JC ID, Drain Current [A] 10 10 D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t) = 2 .5 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 -1 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] www.onsemi.com 4 10 0 10 1 125 150 FQD3N60CTM-WS — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) FQD3N60CTM-WS — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS V 10V GS 10% VGS DUT td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQD3N60CTM-WS — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQD3N60CTM-WS — N-Channel QFET® MOSFET Mechanical Dimensions TO-252 3L (DPAK) Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. Dimension in Millimeters www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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