P-Channel QFET® MOSFET
-100 V, -3.6 A, 1.05Ω
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• -3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V,
ID = 1.8 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 18 pF)
• 100% avalanche tested
D
D
G
G
D-PAK
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD5P10
-100
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
dv/dt
PD
- Pulsed
TL
-3.6
A
-2.28
A
-14.4
A
30
V
(Note 2)
55
mJ
(Note 1)
-3.6
A
(Note 1)
2.5
-6.0
2.5
mJ
V/ns
W
25
0.2
-55 to +150
W
W/°C
°C
300
°C
FQD5P10
5.0
Unit
°C/W
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
Unit
V
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RJA
Thermal Resistance, Junction-to-Ambient *
50
°C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQD5P10/D
FQD5P10 P-Channel QFET® MOSFET
FQD5P10
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Min
Typ
Max
Unit
-100
--
--
V
--
-0.1
--
V/°C
VDS = -100 V, VGS = 0 V
--
--
-1
A
VDS = -80 V, TC = 125°C
--
--
-10
A
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 A
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.8 A
--
0.82
1.05
gFS
Forward Transconductance
VDS = -40 V, ID = -1.8 A
--
2.3
--
S
Ciss
Input Capacitance
190
250
pF
Output Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
Coss
--
70
90
pF
Crss
Reverse Transfer Capacitance
--
18
25
pF
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
On Characteristics
Dynamic Characteristics
Switching Characteristics
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -4.5 A,
RG = 25
(Note 4)
VDS = -80 V, ID = -4.5 A,
VGS = -10 V
(Note 4)
--
9
30
ns
--
70
150
ns
--
12
35
ns
--
30
70
ns
--
6.3
8.2
nC
--
1.7
--
nC
--
3.0
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-3.6
A
ISM
--
--
-14.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -3.6 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -4.5 A,
dIF / dt = 100 A/s
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -4.5A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
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2
--
85
--
ns
--
0.27
--
C
FQD5P10 P-Channel QFET® MOSFET
Electrical Characteristics
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
1
1
10
Top :
0
10
-ID , Drain Current [A]
-ID, Drain Current [A]
10
-1
10
150℃
0
10
25℃
※ Note :
1. 250μ s Pulse Test
2. TC = 25℃
-2
10
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
-55℃
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
1
-IDR , Reverse Drain Current [A]
VGS = - 10V
2.0
VGS = - 20V
1.5
1.0
0.5
※ Note : TJ = 25℃
0.0
3
6
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
9
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
Capacitance [pF]
0
10
-1
0
400
Coss
350
Ciss
300
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
250
200
Crss
150
100
50
0
-1
10
0
10
1
10
-VGS, Gate-Source Voltage [V]
RDS(on) [],
Drain-Source On-Resistance
10
VDS = -20V
10
VDS = -50V
VDS = -80V
8
6
4
2
※ Note : ID = -4.5 A
0
0
1
Figure 5. Capacitance Characteristics
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
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3
FQD5P10 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -1.8 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
4
1
-ID, Drain Current [A]
100 s
10
1 ms
10 ms
DC
0
10
※ Notes :
3
2
1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
75
100
125
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
-ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
※ N o te s :
1 . Z θ J C ( t) = 5 .0 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0
0 .1
0 .0 5
0 .0 2
0 .0 1
10
PDM
t1
-1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
150
FQD5P10 P-Channel QFET® MOSFET
Typical Characteristics
FQD5P10 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
VDD
VGS
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
VDD
VDS (t)
ID (t)
IAS
BVDSS
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5
Time
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
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6
VDD
FQD5P10 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQD5P10 P-Channel QFET® MOSFET
Package Dimensions
D-PAK
Dimensions in Millimeters
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7
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