FSB560A

FSB560 / FSB560A — NPN Low-Saturation Transistor FSB560 / FSB560A NPN Low-Saturation Transistor Features • These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. C E B SuperSOTTM-3 (SOT-23) Ordering Information Part Number Marking Package Packing Method FSB560 560 SSOT 3L Tape and Reel FSB560A 560A SSOT 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current - Continuous 2 A -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. © 2001 Semiconductor Components Industries, LLC. December-2017, Rev. 2 Publication Order Number: FSB560A/D Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device Dissipation Derate Above 25°C Thermal Resistance, Junction-to-Ambient Max. Unit 500 mW 4 mW/°C 250 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current 100 nA VCB = 30 V, IE = 0, TA = 100°C 10 μA 100 nA VEB = 4 V, IC = 0 IC = 100 mA, VCE = 2 V hFE VCE(sat) DC Current Gain IC = 500 mA, VCE = 2 V (4) 70 FSB560 100 300 FSB560A 250 550 IC = 1 A, VCE = 2 V 80 IC = 2 A, VCE = 2 V 40 IC = 1 A, IB = 100 mA Collector-Emitter Saturation Voltage(4) IC = 2 A, IB = 200 mA (4) V VCB = 30 V, IE = 0 300 FSB560 350 FSB560A 300 mV VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA 1.25 V VBE(on) Base-Emitter On Voltage(4) IC = 1 A, VCE = 2 V 1 V Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF fT Transition Frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% www.onsemi.com 2 75 MHz FSB560 / FSB560A — NPN Low-Saturation Transistor Thermal Characteristics(3) β = 10 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) 1.4 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 0.8 450 β = 10 f = 1.0 MHz 400 0.6 125°C 25°C 0.4 - 40°C 0.2 350 C ibo 300 250 200 150 100 C obo 50 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 0 0.1 10 Figure 3. Collector-Emitter Saturation Voltage vs. Collector Current 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 4. Input / Output Capacitance vs. Reverse Bias Voltage 400 700 VCE = 2 V FSB560 FSB560A 300 hFE- DC CURRENT GAIN 600 hFE- DC CURRENT GAIN 10 Figure 2. Base-Emitter On Voltage vs. Collector Current CAPACITANCE (pf) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Base-Emitter Saturation Voltage vs. Collector Current 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) o TA=150 C o 200 25 C o -40 C 100 0 0.001 0.010 0.100 1.000 500 IC- COLLECTOR CURRENT [A] VCE = 2 V o 400 25 C 300 o -40 C 200 100 0 0.001 10.000 o TA=125 C 0.010 0.100 1.000 10.000 IC- COLLECTOR CURRENT [A] Figure 5. Current Gain vs. Collector Current Figure 6. Current Gain vs. Collector Current www.onsemi.com 3 FSB560 / FSB560A — NPN Low-Saturation Transistor Typical Performance Characteristics FSB560 / FSB560A — NPN Low-Saturation Transistor Physical Dimensions Figure 7. MOLDED PACKAGE, SUPERSOT, 3-LEAD www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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