FSGM0465R
Green-Mode Power Switch
Description
The FSGM0465R is an integrated Pulse Width Modulation (PWM)
controller and SENSEFET® specifically designed for offline
Switch−Mode Power Supplies (SMPS) with minimal external
components. The PWM controller includes an integrated
fixed−frequency oscillator, Under−Voltage Lockout (UVLO),
Leading−Edge Blanking (LEB), optimized gate driver, internal
soft−start, temperature−compensated precise current sources for loop
compensation, and self−protection circuitry. Compared with a discrete
MOSFET and PWM controller solution, the FSGM series can reduce
total cost, component count, size, and weight; while simultaneously
increasing efficiency, productivity, and system reliability. This device
provides a basic platform suited for cost−effective design of a flyback
converter.
www.onsemi.com
TO−220−6LD LF
CASE 340BG
Features
• Soft Burst−Mode Operation for Low Standby Power Consumption
•
•
•
•
•
•
•
•
and Low Noise
Precision Fixed Operating Frequency: 66 kHz
Pulse−by−Pulse Current Limit
Various Protection Functions: Overload Protection (OLP),
Over−Voltage Protection (OVP), Abnormal Over−Current Protection
(AOCP), Internal Thermal Shutdown (TSD) with Hysteresis,
Output−Short Protection (OSP), and Under−Voltage Lockout
(UVLO) with Hysteresis
Auto−Restart Mode
Internal Startup Circuit
Internal High−Voltage SENSEFET: 650 V
Built−in Soft−Start: 15 ms
These are Pb−Free Devices
TO−220 FULLPAK 6LD LF
CASE 340BP
MARKING DIAGRAM
$Y&Z&3&K
GM0465R
Applications
• Power Supply for LCD TV and Monitor, STB and DVD
Combination
Related Resources
• Power Supply WebDesigner — Flyback Design & Simulation − In
Minutes at No Expense
$Y
&Z
&3
&K
GM0465R
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code Format
= 2−Digit Lot Run Tracebility Code
= Specific Device Code Data
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
July, 2019 − Rev. 2
1
Publication Order Number:
FSGM0465R/D
FSGM0465R
ORDERING INFORMATION
Output Power Table (Note 2)
Operating
Junction
Temperature
230VAC 15% (Note 3)
Current Limit RDS(ON) (Max.)
85 − 265 VAC
Adapter
(Note 4)
Open Frame
(Note 5)
Adapter
(Note 4)
Open Frame
(Note 5)
Replaces
Device
Shipping
400 / Tube
Part Number
Package
FSGM0465RWDTU
TO−220F
6−Lead
(Note 1)
W−Forming
−40°C ~
+125°C
1.80 A
2.6 W
60 W
70 W
33 W
48 W
FSDM0465RE
FSGM0465RUDTU
TO−220F
6−Lead
(Note 1)
U−Forming
−40°C ~
+125°C
1.80 A
2.6 W
60 W
70 W
33 W
48 W
FSDM0465RE
FSGM0465RLDTU
TO−220F
6−Lead
(Note 1)
L−Forming
−40°C ~
+125°C
1.80 A
2.6 W
60 W
70 W
33 W
48 W
FSDM0465RE
1.
2.
3.
4.
5.
Pb−free package per JEDEC J−STD−020B.
The junction temperature can limit the maximum output power.
230 VAC or 100 / 115 VAC with voltage doubler.
Typical continuous power in a non−ventilated enclosed adapter measured at 50°C ambient temperature.
Maximum practical continuous power in an open−frame design at 50°C ambient temperature.
Application Circuit
VO
AC
IN
VSTR
Drain
PWM
GND
FB
VCC
Figure 1. Typical Application Circuit
www.onsemi.com
2
FSGM0465R
Internal Block Diagram
N.C.
VSTR
VCC
Drain
5
6
3
1
ICH
Vref
Vburst
0.5 V / 0.7 V
VCC
Vref
I DELAY
7.5V / 12V
OSC
Soft Start
I FB
PWM
FB
VCC good
Soft Burst
4
S
Q
R
Q
Gate
Driver
3R
LEB (300 ns)
R
tON < tOSP (1.2 ms)
LPF
VAOCP
VOSP
VSD
6V
TSD
VCC good
S
Q
R
Q
VCC
VOVP
24.5 V
Figure 2. Internal Block Diagram
Pin Configuration
6. VSTR
5. N.C.
4. FB
3. VCC
2. GND
1. Drain
Figure 3. Pin Configuration (Top View)
www.onsemi.com
3
2
GND
FSGM0465R
PIN DEFINITIONS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Pin No.
Name
Description
1
Drain
SENSEFET Drain. High−voltage power SENSEFET drain connection.
2
GND
Ground. This pin is the control ground and the SENSEFET source.
3
VCC
Power Supply. This pin is the positive supply input, which provides the internal operating current for both startup and
steady−state operation.
4
FB
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The collector of an
opto−coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and
GND. If the voltage of this pin reaches 6 V, the overload protection triggers, which shuts down the power switch.
5
N.C.
No connection.
6
VSTR
Startup. This pin is connected directly, or through a resistor, to the high−voltage DC link. At startup, the internal
high−voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin.
Once VCC reaches 12 V, the internal current source (ICH) is disabled.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Unit
VSTR
VSTR Pin Voltage
−
650
V
VDS
Drain Pin Voltage
−
650
V
VCC
VCC Pin Voltage
−
26
V
VFB
Feedback Pin Voltage
−0.3
12.0
V
IDM
Drain Current Pulsed
IDS
Continuous Switching Drain Current (Note 6)
−
10
A
TC = 25°C
−
5.0
A
TC = 100°C
−
3.2
A
EAS
Single Pulsed Avalanche Energy (Note 7)
−
250
mJ
PD
Total Power Dissipation (TC = 25°C) (Note 8)
−
45
W
TJ
Maximum Junction Temperature
−
150
°C
Operating Junction Temperature (Note 9)
−40
+125
°C
TSTG
Storage Temperature
−55
+150
°C
VISO
Minimum Isolation Voltage (Note 10)
2.5
−
kV
ESD
Electrostatic Discharge Capability
Human Body Model, JESD22−A114
2
−
kV
Charged Device Model, JESD22−C101
2
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX = 0.75) and junction temperature
(see Figure 4).
7. L = 45 mH, starting TJ = 25°C.
8. Infinite cooling condition (refer to the SEMI G30−88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
10. The voltage between the package back side and the lead is guaranteed.
IDS
DMAX
f SW
Figure 4. Repetitive Peak Switching Current
www.onsemi.com
4
FSGM0465R
THERMAL CHARACTERISTICS
Symbol
Characteristic
qJA
Junction−to−Ambient Thermal Impedance (Note 11)
qJC
Junction−to−Case Thermal Impedance (Note 12)
Value
Unit
62.5
°C/W
3
°C/W
11. Infinite cooling condition (refer to the SEMI G30−88).
12. Free standing with no heat−sink under natural convection.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
650
−
−
V
SENSEFET SECTION
BVDSS
Drain−Source Breakdown Voltage
VCC = 0 V, ID = 250 mA
IDSS
Zero−Gate−Voltage Drain Current
VDS = 520 V, TA = 125°C
−
−
250
mA
Drain−Source On−State Resistance
VGS = 10 V, ID = 1 A
−
2.1
2.6
W
CISS
Input Capacitance (Note 13)
VDS = 25 V, VGS = 0 V, f = 1MHz
−
436
−
pF
COSS
Output Capacitance (Note 13)
VDS = 25 V, VGS = 0 V, f = 1MHz
−
65
−
pF
Rise Time
VDS = 325 V, ID = 4 A, RG = 25 W
−
24
−
ns
Fall Time
VDS = 325 V, ID = 4 A, RG = 25 W
−
24
−
ns
td(on)
Turn−on Delay Time
VDS = 325 V, ID = 4 A, RG = 25 W
−
13
−
ns
td(off)
Turn−off Delay Time
VDS = 325 V, ID = 4 A, RG = 25 W
−
30
−
ns
VCC = 14 V, VFB = 4 V
60
66
72
kHz
Switching Frequency Variation (Note 13)
−25°C < TJ < +125°C
−
±5
±10
%
DMAX
Maximum Duty Ratio
VCC = 14 V, VFB = 4 V
65
70
75
%
DMIN
Minimum Duty Ratio
VCC = 14 V, VFB = 0 V
−
−
0
%
IFB
Feedback Source Current
VFB = 0
160
210
260
mA
VSTART
UVLO Threshold Voltage
VFB = 0 V, VCC Sweep
11
12
13
V
After Turn−on, VFB = 0 V
7.0
7.5
8.0
V
13
−
23
V
VSTR = 40 V, VCC Sweep
−
15
−
ms
VCC = 14 V, VFB Sweep
0.6
0.7
0.8
V
VBURL
0.4
0.5
0.6
V
Hys
−
200
−
mV
RDS(ON)
tr
tf
CONTROL SECTION
fS
DfS
Switching Frequency
VSTOP
VOP
VCC Operating Range
tS/S
Internal Soft−Start Time
BURST−MODE SECTION
VBURH
Burst−Mode Voltage
PROTECTION SECTION
ILIM
Peak Drain Current Limit
di/dt = 300 mA/ms
1.64
1.80
1.96
A
VSD
Shutdown Feedback Voltage
VCC = 14 V, VFB Sweep
5.5
6.0
6.5
V
Shutdown Delay Current
VCC = 14 V, VFB = 4 V
2.5
3.3
4.1
mA
−
300
−
ns
23.0
24.5
26.0
V
IDELAY
Hys
VOVP
Leading−Edge Blanking Time (Note 13, 14)
Over−Voltage Protection
VCC Sweep
www.onsemi.com
5
FSGM0465R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
1.0
1.2
1.4
ms
1.8
2.0
2.2
V
2.0
2.5
3.0
ms
130
140
150
°C
−
30
−
°C
PROTECTION SECTION
tOSP
VOSP
Output Short
Protection (Note 13)
tOSP_FB
TSD
OSP Triggered when tON < tOSP &
VFB > VOSP (Lasts Longer than
tOSP_FB)
Threshold Time
Threshold VFB
VFB Blanking Time
Thermal Shutdown Temperature (Note 13)
Hys
Shutdown Temperature
Hysteresis
TOTAL DEVICE SECTION
IOP
Operating Supply Current, (Control Part in
Burst Mode)
VCC = 14 V, VFB = 0 V
1.2
1.6
2.0
mA
IOPS
Operating Switching Current, (Control Part
and SENSEFET Part)
VCC = 14 V, VFB = 4 V
2.0
2.5
3.0
mA
Start Current
VCC = 11 V (Before VCC Reaches
VSTART)
0.5
0.6
0.7
mA
Startup Charging Current
VCC = VFB = 0 V, VSTR = 40 V
1.00
1.15
1.50
mA
Minimum VSTR Supply Voltage
VCC = VFB = 0 V, VSTR Sweep
−
26
−
V
ISTART
ICH
VSTR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
13. Although these parameters are guaranteed, they are not 100% tested in production.
14. tLEB includes gate turn−on time.
Table 1. COMPARISON OF FSDM0465RE AND FSGM0465R
Function
FSDM0465RE
FSGM0465R
Burst Mode
Advanced Burst
Advanced Soft Burst
Lightning Surge
Strong
Advantages of FSGM0465R
Low noise and low standby power
Enhanced SENSEFET and controller against lightning surge
Soft−Start
10 ms (Built−in)
15 ms (Built−in)
Protections
OLP
OVP
TSD
OLP
OVP
OSP
AOCP
TSD with Hysteresis
Power Balance
Long TCLD
Very Short TCLD
Longer soft−start time
Enhanced protections and high reliability
The difference of input power between the low and high input
voltage is quite small
www.onsemi.com
6
FSGM0465R
1.20
1.20
1.15
1.15
1.10
1.10
Normalized
Normalized
TYPICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
1.05
1.00
0.95
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
−40°C
0.80
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
−25°C
0°C
Temperature [°C]
1.40
1.20
1.30
1.15
1.20
1.10
Normalized
Normalized
75°C
100°C
125°C
Figure 6. Operating Switching Current (IOPS) vs. TA
1.10
1.00
0.90
1.05
1.00
0.95
0.80
0.90
0.70
0.85
0.60
0.80
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
−25°C
0°C
Temperature [°C]
25°C
50°C
75°C
100°C
125°C
Temperature [°C]
Figure 7. Startup Charging Current (ICH) vs. TA
Figure 8. Peak Drain Current Limit (ILIM) vs. TA
1.20
1.20
1.15
1.15
1.10
1.10
Normalized
Normalized
50°C
Temperature [°C]
Figure 5. Operating Supply Current (IOP) vs. TA
−40°C
25°C
1.05
1.00
0.95
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
0.80
−40°C
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
Temperature [°C]
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
Temperature [°C]
Figure 9. Feedback Source Current (IFB) vs. TA
Figure 10. Shutdown Delay Current (IDELAY) vs. TA
www.onsemi.com
7
FSGM0465R
1.20
1.20
1.15
1.15
1.10
1.10
Normalized
Normalized
TYPICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
1.05
1.00
0.95
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
−40°C
0.80
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
−25°C
0°C
Temperature [°C]
1.15
1.10
1.10
Normalized
Normalized
1.20
1.15
1.05
1.00
0.95
100°C
125°C
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
0.80
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
−25°C
0°C
Temperature [°C]
25°C
50°C
75°C
100°C
125°C
Temperature [°C]
Figure 13. Shutdown Feedback Voltage (VSD) vs. TA
Figure 14. Over−Voltage Protection (VOVP) vs. TA
1.20
1.20
1.15
1.15
1.10
1.10
Normalized
Normalized
75°C
Figure 12. UVLO Threshold Voltage (VSTOP) vs. TA
1.20
1.05
1.00
0.95
1.05
1.00
0.95
0.90
0.90
0.85
0.85
0.80
−40°C
50°C
Temperature [°C]
Figure 11. UVLO Threshold Voltage (VSTART) vs. TA
−40°C
25°C
0.80
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
−40°C
Temperature [°C]
−25°C
0°C
25°C
50°C
75°C
100°C
125°C
Temperature [°C]
Figure 15. Switching Frequency (fS) vs. TA
Figure 16. Maximum Duty Ratio (DMAX) vs. TA
www.onsemi.com
8
FSGM0465R
FUNCTIONAL DESCRIPTION
the required output voltage. This helps prevent transformer
saturation and reduces stress on the secondary diode during
startup.
Startup
At startup, an internal high−voltage current source
supplies the internal bias and charges the external capacitor
(CVcc) connected to the VCC pin, as illustrated in Figure 17.
When VCC reaches 12 V, the FSGM0465R begins switching
and the internal high−voltage current source is disabled. The
FSGM0465R continues normal switching operation and the
power is supplied from the auxiliary transformer winding
unless VCC goes below the stop voltage of 7.5 V.
Feedback Control
This device employs current−mode control, as shown in
Figure 18. An opto−coupler (such as the FOD817) and shunt
regulator (such as the KA431) are typically used to
implement the feedback network. Comparing the feedback
voltage with the voltage across the RSENSE resistor makes it
possible to control the switching duty cycle. When the
reference pin voltage of the shunt regulator exceeds the
internal reference voltage of 2.5 V, the opto−coupler LED
current increases, pulling down the feedback voltage and
reducing drain current. This typically occurs when the input
voltage is increased or the output load is decreased.
VDC
CVcc
VCC
3
6
Pulse−by−Pulse Current Limit
Because current− mode control is employed, the peak
current through the SENSEFET is limited by the inverting
input of PWM comparator (VFB*), as shown in Figure 18.
Assuming that the 210 mA current source flows only through
the internal resistor (3R + R = 11.6 kW), the cathode voltage
of diode D2 is about 2.4 V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.4 V, the maximum
voltage of the cathode of D2 is clamped at this voltage.
Therefore, the peak value of the current through the
SENSEFET is limited.
VSTR
ICH
7.5 V / 12 V
Vref
VCC good
Internal
Bias
Figure 17. Startup Block
Leading−Edge Blanking (LEB)
At the instant the internal SENSEFET is turned on, a
high−current spike usually occurs through the SENSEFET,
caused by primary−side capacitance and secondary−side
rectifier reverse recovery. Excessive voltage across the
RSENSE resistor leads to incorrect feedback operation in
the current mode PWM control. To counter this effect, the
FSGM0465R employs a leading−edge blanking (LEB)
circuit. This circuit inhibits the PWM comparator for tLEB
(300 ns) after the SENSEFET is turned on.
Soft−Start
The FSGM0465R has an internal soft−start circuit that
increases PWM comparator inverting input voltage,
together with the SENSEFET current, slowly after it starts.
The typical soft−start time is 15 ms. The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased to smoothly establish
Drain
1
Vref
VCC
VOUT
VFB
FOD817
IDELAY
IFB
D1
D2
FB
OSC
3R
4
CFB
PWM
VFB*
R
Gate
Driver
LEB (300 ns)
KA431
OSP
VOSP
AOCP
OLP
VSD
Figure 18. Pulse Width Modulation Circuit
www.onsemi.com
9
RSENSE
VAOCP
GND
2
FSGM0465R
Protection Circuits
current, thus increasing the feedback voltage (VFB). If VFB
exceeds 2.4 V, D1 is blocked and the 3.3 mA current source
starts to charge CFB slowly up. In this condition, VFB
continues increasing until it reaches 6.0 V, when the
switching operation is terminated, as shown in Figure 20.
The delay time for shutdown is the time required to charge
CFB from 2.4 V to 6.0 V with 3.3 mA. A 25 ~ 50 ms delay is
typical for most applications. This protection is
implemented in auto−restart mode.
The FSGM0465R has several self−protective functions,
such as Overload Protection (OLP), Abnormal
Over−Current Protection (AOCP), Output−Short Protection
(OSP), Over−Voltage Protection (OVP), and Thermal
Shutdown (TSD). All the protections are implemented as
auto−restart. Once the fault condition is detected, switching
is terminated and the SENSEFET remains off. This causes
VCC to fall. When VCC falls to the Under−Voltage Lockout
(UVLO) stop voltage of 7.5 V, the protection is reset and the
startup circuit charges the VCC capacitor. When VCC reaches
the start voltage of 12.0 V, the FSGM0465R resumes normal
operation. If the fault condition is not removed, the
SENSEFET remains off and VCC drops to stop voltage
again. In this manner, the auto−restart can alternately enable
and disable the switching of the power SENSEFET until the
fault condition is eliminated. Because these protection
circuits are fully integrated into the IC without external
components, the reliability is improved without increasing
cost.
VDS
Power
on
Fault
occurs
VFB
6.0 V
2.4 V
t12 = CFB x (6.0 − 2.4) / Idelay
t1
Fault
removed
t
Abnormal Over−Current Protection (AOCP)
When the secondary rectifier diodes or the transformer
pins are shorted, a steep current with extremely high di/dt
can flow through the SENSEFET during the minimum
turn−on time. Even though the FSGM0465R has overload
protection, it is not enough to protect the FSGM0465R in
that abnormal case; since severe current stress is imposed on
the SENSEFET until OLP is triggered. The FSGM0465R
internal AOCP circuit is shown in Figure 21. When the gate
turn−on signal is applied to the power SENSEFET, the
AOCP block is enabled and monitors the current through the
sensing resistor. The voltage across the resistor is compared
with a preset AOCP level. If the sensing resistor voltage is
greater than the AOCP level, the set signal is applied to the
S−R latch, resulting in the shutdown of the SMPS.
12.0 V
7.5 V
t
Fault
situation
t2
Figure 20. Overload Protection
VCC
Normal
operation
Overload Protection
Normal
operation
Figure 19. Auto−Restart Protection Waveforms
Overload Protection (OLP)
Overload is defined as the load current exceeding its
normal level due to an unexpected abnormal event. In this
situation, the protection circuit should trigger to protect the
SMPS. However, even when the SMPS is in normal
operation, the overload protection circuit can be triggered
during the load transition. To avoid this undesired operation,
the overload protection circuit is designed to trigger only
after a specified time to determine whether it is a transient
situation or a true overload situation. Because of the
pulse−by−pulse current limit capability, the maximum peak
current through the SENSEFET is limited and, therefore, the
maximum input power is restricted with a given input
voltage. If the output consumes more than this maximum
power, the output voltage (VOUT) decreases below the set
voltage. This reduces the current through the opto−coupler
LED, which also reduces the opto−coupler transistor
Drain
1
OSC
3R
VFB*
PWM
Gate
Driver
R
LEB (300 ns)
R SENSE
Q S
Q R
VAOCP
VCC good
GND
2
Figure 21. Abnormal Over−Current Protection
www.onsemi.com
10
FSGM0465R
Output−Short Protection (OSP)
If the output is shorted, steep current with extremely high
di/dt can flow through the SENSEFET during the minimum
turn−on time. Such a steep current brings high−voltage
stress on the drain of the SENSEFET when turned off. To
protect the device from this abnormal condition, OSP is
included. It is comprised of detecting VFB and SENSEFET
turn−on time. When the VFB is higher than 2 V and the
SENSEFET turn−on time is lower than 1.2 ms, the
FSGM0465R recognizes this condition as an abnormal error
and shuts down PWM switching until VCC reaches VSTART
again. An abnormal condition output short is shown in
Figure 22.
VFB*
MOSFET
Drain
Current
Rectifier
Diode
Current
Thermal Shutdown (TSD)
The SENSEFET and the control IC on a die in one
package makes it easier for the control IC to detect the over
temperature of the SENSEFET. If the temperature exceeds
~140°C, the thermal shutdown is triggered and the
FSGM0465R stops operation. The FSGM0465R operates in
auto−restart mode until the temperature decreases to around
110°C, when normal operation resumes.
Soft Burst−Mode Operation
To minimize power dissipation in standby mode, the
FSGM0465R enters burst−mode operation. As the load
decreases, the feedback voltage decreases. As shown in
Figure 23, the device automatically enters burst mode when
the feedback voltage drops below VBURL (500 mV). At this
point, switching stops and the output voltages start to drop
at a rate dependent on standby current load. This causes the
feedback voltage to rise. Once it passes VBURH (700 mV),
switching resumes. At this point, the drain current peak
increases gradually. This soft burst−mode can reduce
audible noise during burst−mode operation. The feedback
voltage then falls and the process repeats. Burst−mode
operation alternately enables and disables switching of the
SENSEFET, thereby reducing switching loss in standby
mode.
ILIM
VFB * = 0.5 V
VFB * = 2.0 V
ILm
0
t OFF t ON
1.2 ms
1.2 ms
t
output short occurs
VOUT
I OUT
0
OSP
t
VO
OSP triggered
0
t
t
VFB
Figure 22. Output−Short Protection
Over−Voltage Protection (OVP)
If the secondary−side feedback circuit malfunctions or a
solder defect causes an opening in the feedback path, the
current through the opto−coupler transistor becomes almost
zero. Then VFB climbs up in a similar manner to the overload
situation, forcing the preset maximum current to be supplied
to the SMPS until the overload protection is triggered.
Because more energy than required is provided to the output,
the output voltage may exceed the rated voltage before the
overload protection is triggered, resulting in the breakdown
of the devices in the secondary side. To prevent this
situation, an OVP circuit is employed. In general, the VCC
is proportional to the output voltage and the FSGM0465R
uses VCC instead of directly monitoring the output voltage.
If VCC exceeds 24.5 V, an OVP circuit is triggered, resulting
in the termination of the switching operation. To avoid
undesired activation of OVP during normal operation, VCC
should be designed to be below 24.5 V.
0.70 V
0.50 V
t
IDS
Soft Burst
t
VDS
t
Switching
t1 disabled
Switching
t2 t3 disabled t4
Figure 23. Burst−Mode Operation
www.onsemi.com
11
FSGM0465R
TYPICAL APPLICATION CIRCUIT
Table 2. TYPICAL APPLICATION CIRCUIT
Application
Input Voltage
Rated Output
Rated Power
LCD TV, Monitor Power Supply
85 ~ 265 VAC
5.0 V (2 A)
14.0 V (2.4 A)
43.6 W
2. The SMD−type capacitor (C106) must be placed
as close as possible to the VCC pin to avoid
malfunction by abrupt pulsating noises and to
improve ESD and surge immunity. Capacitance
between 100 nF and 220 nF is recommended.
Key Design Notes:
1. The delay time for overload protection is designed
to be about 30 ms with C105 (27 nF). OLP time
between 25 ms (22 nF) and 50 ms (43 nF) is
recommended.
Schematic
T101
EER3016
BD101
G2SBA60
2
C104
3.3nF
630V
R103
43k Ω
1W
R102
75k Ω
D101
1N 4007
C103
100μF
400V
6
3
VSTR
Drain
10
2
6, 9
4
4
C105
27nF
100V
C102
150nF
275VAC
FB
VCC
GND
L201
5μH
14V, 2.4A
C201
1000μF
25V
C202
1000μF
25V
C206
100nF
SMD
3
C301
4.7nF
Y2
1
R104
62Ω
0.5W
5 N.C.
NTC101
5D−9
1
FSGM0465R
1
D201
MBR20150CT
C106
220nF
SMD
C107
47μF
50V
D202
FYPF2006DN
3
D102
UF 4004
2
4
L202
5μH
5V, 2A
7, 8
C207
100nF
SMD
C204
1000μF
16V
C203
2200μF
10V
6, 9
5
ZD101
1N4749A
LF101
15mH
R201
330Ω
R101
1.5MΩ
1W
C101
220nF
275VAC
R202
1.2k Ω
IC301
FOD817B
F101
FUSE
250V
3.15A
IC201
KA431LZ
R203
18k Ω
C205
47nF
R204
8k Ω
R205
8k Ω
Figure 24. Schematic of Demonstration Board
Transformer
1
EER3019
10
N p /2 2
9
N p /2 3
8
Na 4
7
5
6
Barrier tape
N 14V
N 5V
N p /2
2
1
Na
4
5
N 5V
7
6
N 14V 10
8
N 5V
8
9
N p /2
3
2
BOT
Figure 25. Schematic of Transformer
www.onsemi.com
12
TOP
FSGM0465R
Winding Specification
Table 3. WINDING SPECIFICATION
Barrier Tape
BOT
Ts
Solenoid Winding
3.0 mm
1
5
Solenoid Winding
2.0 mm
1
3
Solenoid Winding
3.0 mm
1
6
Solenoid Winding
4.0 mm
1
22
Solenoid Winding
2.0 mm
1
Pin (S F)
Wire
Turns
Winding Method
3→2
0.3 φ x 1
23
Solenoid Winding
3
Np/2
TOP
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N5V
8→9
0.4 φ x 2 (TIW)
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N14V
10 → 8
0.4 φ x 2 (TIW)
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N5V
7→6
0.4 φ x 2 (TIW)
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
Na
4→5
0.2 φ x 1
3.0 mm
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
Np/2
2→1
0.3 φ x 1
Insulation: Polyester Tape t = 0.025 mm, 2 Layers
Electrical Characteristics
Table 4. ELECTRICAL CHARACTERISTICS
Pin
Specification
Remark
Inductance
1−3
830 μH ±7%
67 kHz, 1 V
Leakage
1−3
15 mH Maximum
Short All Other Pins
Core & Bobbin
• Core: EER3019 (Ae = 134.0 mm2)
• Bobbin: EER3019
www.onsemi.com
13
FSGM0465R
Bill of Materials
Table 5. Bill of Materials
Part #
F101
Part #
Value
Note
Note
Capacitor
Fuse
C101
220 nF / 275 V
Box (Pilkor)
250 V 3.15 A
C102
150 nF / 275 V
Box (Pilkor)
C103
100 mF / 400 V
Electrolytic (SamYoung)
C104
3.3 nF / 630 V
Film (Sehwa)
C105
27 nF / 100 V
Film (Sehwa)
C106
220 nF
SMD (2012)
C107
47 mF / 50 V
Electrolytic (SamYoung)
NTC
NTC101
Value
5D−9
DSC
Resistor
R101
1.5 MW, J
1W
R102
75 kW, J
1/2 W
R103
43 kW, J
1W
R104
62 W, J
1/2 W
C201
1000 mF / 25 V
Electrolytic (SamYoung)
R201
330 W, F
1/4 W, 1%
C202
1000 mF / 25 V
Electrolytic (SamYoung)
R202
1.2 kW, F
1/4 W, 1%
C203
2200 mF / 10 V
Electrolytic (SamYoung)
R203
18 kW, F
1/4 W, 1%
C204
1000 mF / 16 V
Electrolytic (SamYoung)
R204
8 kW, F
1/4 W, 1%
C205
47 nF / 100 V
Film (Sehwa)
R205
8 kW, F
1/4 W, 1%
C206
100 nF
SMD (2012)
C207
100 nF
SMD (2012)
C301
4.7 nF / Y2
Y−cap (Samhwa)
IC
FSGM0465R
FSGM0465R
ON Semiconductor
IC201
KA431LZ
ON Semiconductor
IC301
FOD817B
ON Semiconductor
Inductor
LF101
15 mH
Line filter 0.5Ø
L201
5 mH
5A Rating
L202
5 mH
5A Rating
Diode
D101
1N4007
Vishay
D102
UF4004
Vishay
ZD101
1N4749
Vishay
D201
MBR20150CT
ON Semiconductor
D202
FYPF2006DN
ON Semiconductor
BD101
G2SBA60
Vishay
Jumper
J101
Transformer
T101
830 mH
SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−6LD LF
CASE 340BG
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13840G
TO−220−6LD LF
DATE 01 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
