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FSL116HR
Green-Mode Power Switch
Description
The FSL116HR integrated Pulse Width Modulator (PWM) and
SENSEFET® is specifically designed for high− performance offline
Switched−Mode Power Supplies (SMPS) with minimal external
components. FSL116HR includes integrated high−voltage power
switching regulators that combine an avalanche−rugged SENSEFET
with a Current−Mode PWM control block.
The integrated PWM controller includes: Under−Voltage Lockout
(UVLO) protection, Leading−Edge Blanking (LEB), a frequency
generator for EMI attenuation, an optimized gate turn−on / turn−off
driver, Thermal Shutdown (TSD) protection, and temperature−
compensated precision current sources for loop compensation and
fault−protection circuitry. The FSL116HR offers good soft−start
performance. When compared to a discrete MOSFET and controller or
RCC switching converter solution, the FSL116HR reduces total
component count, design size, and weight; while increasing efficiency,
productivity, and system reliability. This device provides a basic
platform that is well suited for the design of cost−effective flyback
converters.
Features
• Internal Avalanche−Rugged SENSEFET (650 V)
• Under 50 mW Standby Power Consumption at 265 VAC, No−load
Condition with Burst Mode
• Precision Fixed Operating Frequency with Frequency Modulation for
•
•
•
•
•
•
•
•
•
Attenuating EMI
Internal Startup Circuit
Built−in Soft−Start: 20 ms
Pulse−by−Pulse Current Limiting
Various Protections: Over−Voltage Protection (OVP), Overload
Protection (OLP), Output−Short Protection (OSP), Abnormal
Over−Current Protection (AOCP), Internal Thermal Shutdown
Function with Hysteresis (TSD)
Auto−Restart Mode
Under−Voltage Lockout (UVLO)
Low Operating Current: 1.8 mA
Adjustable Peak Current Limit
This is a Pb−Free Device
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PDIP8 9.42x6.38, 2.54P
CASE 646CM
MARKING DIAGRAM
$Y&E&Z&2&K
FSL116HR
$Y
&E
&Z
&2
&K
FSL116HR
= ON Semiconductor Logo
= Designates Space
= Assembly Plant Code
= 2−Digit Date Code Format
= 2−Digit Lot Run Tracebility Code
= Specific Device Code Data
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Applications
• SMPS for VCR, STB, DVD, & DVCD Players
• SMPS for Home Appliance
• Adapter
© Semiconductor Components Industries, LLC, 2019
July, 2019 − Rev. 2
1
Publication Order Number:
FSL116HR/D
FSL116HR
Related Resources
Table 1. MAXIMUM OUTPUT POWER
• AN−4137 − Design Guidelines for Offline Flyback
•
•
•
Maximum Output Power (Note 1)
Converters Using Power Switch
AN−4141 − Troubleshooting and Design Tips for Power
Switch Flyback Applications
AN−4147 − Design Guidelines for RCD Snubber of
Flyback
Power Supply WebDesigner − Flyback Design &
Simulation − In Minutes at No Expense
230VAC +15% (Note 2)
85 − 265 VAC
Adapter
(Note 3)
Open Frame
Adapter
(Note 3)
Open Frame
11 W
16 W
10 W
14 W
1. The junction temperature can limit the maximum output power.
2. 230 VAC or 100 / 115 VAC with doubler.
3. Typical continuous power in a non−ventilated enclosed adapter
measured at 50°C ambient.
ORDERING INFORMATION
Part Number
Operating Temperature Range
Top Mark
Package
Shipping
FSL116HR
−40 to 105°C
FSL116HR
8−Lead, Dual Inline Package (DIP)
(Pb−Free)
3000 Units / Tube
Application Diagram
AC
IN
DC
OUT
VSTR
I PK
Drain
PWM
VFB
VCC
Source
Figure 1. Typical Application
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2
FSL116HR
Internal Block Diagram
VSTR
5
VCC
2
D rai n
6,7,8
ICH
VBURL / VBURH
8 V / 12 V
VCC Good
Internal
Bias
VREF
VCC
V CC
I DELAY
Random
Frequency
Generator
IFB
OSC
S Q
PWM
VFB 3
2.5R
Gate
Driver
R Q
R
IPK 4
On−Time
Detector
LEB
Soft
Start
OSP
VSD
VCC Good
VCC
VOVP
S
Q
R
Q
1 GND
AOCP
VAOCP
TSD
Figure 2. Internal Block Diagram
Pin Configuration
GND
VCC
Drain
8−DIP
Drain
VFB
Drain
IPK
VSTR
Figure 3. Pin Configuration
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3
FSL116HR
PIN DEFINITIONS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Pin No.
Name
Description
1
GND
Ground. SENSEFET source terminal on the primary side and internal control ground.
2
VCC
Positive Supply Voltage Input. Although connected to an auxiliary transformer winding, current is supplied from pin 5
(VSTR) via an internal switch during startup (see Figure 2). Once VCC reaches the UVLO upper threshold (12 V), the
internal startup switch opens and device power is supplied via the auxiliary transformer winding.
3
VFB
Feedback Voltage. The non−inverting input to the PWM comparator, it has a 0.4 mA current source connected
internally, while a capacitor and opto−coupler are typically connected externally. There is a delay while charging
external capacitor CFB from 2.4 V to 6 V using an internal 5 mA current source. This delay prevents false triggering
under transient conditions, but still allows the protection mechanism to operate under true overload conditions.
4
IPK
Peak Current Limit. Adjusts the peak current limit of the SENSEFET. The feedback 0.4 mA current source is
diverted to the parallel combination of an internal 6 kW resistor and any external resistor to GND on this pin to
determine the peak current limit.
5
VSTR
Startup. Connected to the rectified AC line voltage source. At startup, the internal switch supplies internal bias and
charges an external storage capacitor placed between the VCC pin and ground. Once VCC reaches 12 V, the
internal switch is opened.
6, 7, 8
Drain
Drain. Designed to connect directly to the primary lead of the transformer and capable of switching a maximum of
650 V. Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Unit
VSTR
VSTR Pin Voltage
−0.3
650.0
V
VDS
Drain Pin Voltage
−0.3
650.0
V
VCC
Supply Voltage
−
26
V
VFB
Feedback Voltage Range
−0.3
12
V
ID
Continuous Drain Current
−
1
A
IDM
Drain Current Pulsed (Note 4)
−
4
A
EAS
Single Pulsed Avalanche Energy (Note 5)
−
38
mJ
PD
Total Power Dissipation
−
1.5
W
TJ
Operating Junction Temperature
TA
Operating Ambient Temperature
−40
+105
°C
TSTG
Storage Temperature
−55
+150
°C
ESD
Human Body Model, JESD22−A114 (Note 6)
5
−
KV
Charged Device Model, JESD22−C101 (Note 6)
2
−
QJA
Junction−to−Ambient Thermal Resistance (Note 7, 8)
−
80
°C/W
QJC
Junction−to−Case Thermal Resistance (Note 7, 9)
−
19
°C/W
QJT
Junction−to−Top Thermal Resistance (Note 7, 10)
−
33.7
°C/W
Internally Limited
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. Repetitive rating: pulse width limited by maximum junction temperature.
5. L = 30 mH, starting TJ = 25°C.
6. Meets JEDEC standards JESD 22−A114 and JESD 22−C101.
7. All items are tested with the standards JESD 51−2 and JESD 51−10.
8. QJA free−standing, with no heat−sink, under natural convection.
9. QJC junction−to−lead thermal characteristics under QJA test condition. TC is measured on the source #7 pin closed to plastic interface for
QJA thermo−couple mounted on soldering.
10. QJT junction−to−top of thermal characteristic under QJA test condition. Tt is measured on top of package. Thermo−couple is mounted in epoxy
glue.
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4
FSL116HR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SENSEFET SECTION
BVDSS
IDSS
RDS(ON)
CISS
Drain−Source Breakdown Voltage
VCC = 0 V, ID = 250 mA
650
−
−
V
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
250
mA
Drain−Source On−State Resistance
VGS = 10 V, VGS = 0 V, TC = 25°C
−
7.3
10.0
W
Input Capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
−
135
−
pF
21
−
pF
COSS
Output Capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
−
CRSS
Reverse Transfer Capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
−
3.2
−
pF
td(ON)
Turn−On Delay
VDS = 350 V, IDS = 1 A
−
10
−
ns
Rise Time
VDS = 350 V, IDS = 1 A
−
13.4
−
ns
Turn−Off Delay
VDS = 350 V, IDS = 1 A
−
14.9
−
ns
Fall Time
VDS = 350 V, IDS = 1 A
−
36.8
−
ns
Switching Frequency
VDS = 650 V, VGS = 0 V
90
100
110
KHz
Switching Frequency Variation
VGS = 10 V, VGS = 0 V, TC = 125°C
−
tr
td(OFF)
tf
CONTROL SECTION
fOSC
DfOSC
fFM
Frequency Modulation
±5
±10
%
−
±3
−
KHz
DMAX
Maximum Duty Cycle
VFB = 4 V
71
77
83
%
DMIN
Minimum Duty Cycle
VFB = 0 V
0
0
0
%
11
12
13
V
7
8
9
V
VSTART
UVLO Threshold Voltage
VSTOP
After Turn−On
IFB
Feedback Source Current
VFB = 0 V
320
400
480
mA
tS/S
Internal Soft−Start Time
VFB = 4 V
15
20
25
ms
0.56
0.70
0.84
V
VBURL
0.37
0.50
0.63
V
VBUR(HYS)
−
200
−
mV
0.96
1.10
1.24
A
200
−
−
ns
BURST−MODE SECTION
VBURH
Burst−Mode Voltage
VCC = 14 V, VFB Sweep
PROTECTION SECTION
ILIM
Peak Current Limit
tCLD
Current Limit Delay Time (Note 11)
VSD
Shutdown Feedback Voltage
VCC = 15 V
5.5
6.0
6.5
V
IDELAY
Shutdown Delay Current
VFB = 5 V
3.5
5.0
6.5
mA
VOVP
Over−Voltage Protection Threshold
VFB = 2 V
22.5
24.0
25.5
V
tOSP
Output Short
Protection (Note 11)
TJ = 25°C
OSP Triggered when ton < tOSP,
VFB > VOSP and Lasts Longer than
tOSP_FB
−
1.00
1.35
ms
1.44
1.60
−
V
2.0
2.5
−
ms
0.85
1.00
1.15
V
125
137
150
°C
−
60
−
°C
VOSP
tOSP_FB
VAOCP
TSD
HYSTSD
TJ = 25°C, di/dt = 300 mA/ms
Threshold Time
Threshold
Feedback Voltage
Feedback Blanking
Time
AOCP Voltage (Note 11)
Thermal Shutdown
(Note 11)
TJ = 25°C
Shutdown
Temperature
Hysteresis
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5
FSL116HR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
300
−
−
ns
PROTECTION SECTION
tLEB
Leading−Edge Blanking Time (Note 11)
TOTAL DEVICE SECTION
IOP1
Operating Supply Current (Note 11)
(While Switching)
VCC = 14 V, VFB > VBURH
−
2.5
3.5
mA
IOP2
Operating Supply Current, (Control Part
Only)
VCC = 14 V, VFB < VBURL
−
1.8
2.5
mA
ICH
Startup Charging Current
VCC = 0 V
0.9
1.1
1.5
mA
Minimum VSTR Supply Voltage
VCC = VFB = 0 V, VSTR Increase
35
−
−
V
VSTR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
11. Guaranteed by design, not 100% tested in production.
TYPICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Operating Frequency (fOSC)
Maximum Duty Cycle (DMAX)
1.4
1.4
1.3
1.3
1.2
1.2
1.1
1.1
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
−40°C −25°C
0°C
25°C
50°C
75°C
100°C 120°C 140°C
−40°C −25°C
Figure 4. Operating Frequency vs. Temperature
0°C
25°C
50°C
75°C
100°C 120°C 140°C
Figure 5. Maximum Duty Cycle vs. Temperature
Start Threshold Voltage (VSTART)
Operating Supply Current (Iop2)
1.4
1.4
1.3
1.3
1.2
1.2
1.1
1.1
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
−40°C −25°C
0°C
25°C
50°C
75°C
100°C 120°C 140°C
−40°C −25°C
Figure 6. Operating Supply Current vs.
Temperature
0°C
25°C
50°C
75°C
100°C 120°C 140°C
Figure 7. Start Threshold Voltage vs. Temperature
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6
FSL116HR
TYPICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Stop Theshold Voltage (VSTOP)
Feedback Source Current (IFB)
1.4
1.4
1.3
1.3
1.2
1.2
1.1
1.1
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
−40°C −25°C
0°C
25°C
50°C
75°C
100°C 120°C 140°C
−40°C −25°C
Figure 8. Stop Threshold Voltage vs. Temperature
0°C
25°C
50°C
75°C
100°C 120°C 140°C
Figure 9. Feedback Source Current vs.
Temperature
Peak Current Limit (ILIM)
Startup Charging Current (ICH)
1.4
1.4
1.3
1.3
1.2
1.2
1.1
1.1
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
−40°C −25°C
0°C
25°C
50°C
75°C
100°C 120°C 140°C
−40°C −25°C
Figure 10. Startup Charging Current vs.
Temperature
0°C
25°C
50°C
75°C
100°C 120°C 140°C
Figure 11. Peak Current Limit vs. Temperature
Burst Operating Supply Current (Iop1)
Over−Voltage Protection (VOVP)
1.4
1.4
1.3
1.3
1.2
1.2
1.1
1.1
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
−40°C −25°C
0°C
25°C
50°C
75°C
100°C 120°C 140°C
−40°C −25°C
Figure 12. Burst Operating Supply Current vs.
Temperature
0°C
25°C
50°C
75°C
100°C 120°C 140°C
Figure 13. Over−Voltage Protection vs.
Temperature
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7
FSL116HR
FUNCTIONAL DESCRIPTION
Feedback Control
FSL116HR employs Current−Mode control, as shown in
Figure 16. An opto−coupler (such as the FOD817A) and
shunt regulator (such as the KA431) are typically used to
implement the feedback network. Comparing the feedback
voltage with the voltage across the RSENSE resistor makes it
possible to control the switching duty cycle. When the shunt
regulator reference pin voltage exceeds the internal
reference voltage of 2.5 V, the opto−coupler LED current
increases, the feedback voltage VFB is pulled down, and the
duty cycle is reduced. This typically occurs when the input
voltage is increased or the output load is decreased.
Startup
At startup, an internal high−voltage current source
supplies the internal bias and charges the external capacitor
(CA) connected with the VCC pin, as illustrated in Figure 14.
When VCC reaches the start voltage of 12 V, the power
switch begins switching and the internal high− voltage
current source is disabled. The power switch continues
normal switching operation and the power is provided from
the auxiliary transformer winding unless VCC goes below
the stop voltage of 8 V.
VDC
VCC
Ca
2
VCC
VSTR
J−FET
VCC good
0.4 mA
OSC
VFB
VO
5
D1
D2
CFB
I CH
8 V / 12 V
VCC
5 mA
I STR
R
2.5 V
VREF
2.5 R
Gate
Driver
LEB
Internal
Bias
VSD
OLP
RSENSE
Figure 14. Startup Circuit
Figure 16. Pulse−Width−Modulation Circuit
Oscillator Block
The oscillator frequency is set internally and the power
switch has a random frequency fluctuation function.
Fluctuation of the switching frequency of a switched power
supply can reduce EMI by spreading the energy over a wider
frequency range than the bandwidth measured by the EMI
test equipment. The amount of EMI reduction is directly
related to the range of the frequency variation. The range of
frequency variation is fixed internally; however, its
selection is randomly chosen by the combination of external
feedback voltage and internal free−running oscillator. This
randomly chosen switching frequency effectively spreads
the EMI noise nearby switching frequency and allows the
use of a cost− effective inductor instead of an AC input line
filter to satisfy the world−wide EMI requirements.
IDS
Leading−Edge Blanking (LEB)
At the instant the internal SENSEFET is turned on, the
primary−side capacitance and secondary−side rectifier
diode reverse recovery typically cause a high−current spike
through the SENSEFET. Excessive voltage across the
RSENSE resistor leads to incorrect feedback operation in the
Current−Mode PWM control. To counter this effect, the
power switch employs a leading−edge blanking (LEB)
circuit (see the Figure 16). This circuit inhibits the PWM
comparator for a short time (tLEB) after the SENSEFET is
turned on.
Protection Circuits
The power switch has protective functions such as
overload protection (OLP), over−voltage protection (OVP),
output− short protection (OSP), under−voltage lockout
(UVLO), abnormal over−current protection (AOCP), and
thermal shutdown (TSD). Because these various protection
circuits are fully integrated in the IC without external
components, reliability is improved without increasing cost.
If a fault condition occurs, switching is terminated and the
SENSEFET remains off. This causes VCC to fall. When VCC
reaches the UVLO stop voltage, VSTOP (8 V), the protection
is reset and the internal high−voltage current source charges
the VCC capacitor via the VSTR pin. When VCC reaches the
UVLO start voltage, VSTART (12 V), the power switch
resumes normal operation. In this manner, the auto−restart
can alternately enable and disable the switching of the power
SENSEFET until the fault condition is eliminated.
several
mseconds
tSW = 1 / fSW
tSW
Dt
fSW
t
fSW + 1/2 DfSWMAX
several
miliseconds
no repetition
fSW − 1/2 DfSWMAX
t
Figure 15. Frequency Fluctuation Waveform
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8
FSL116HR
Fault
occurs
Power
on
VDS
Abnormal Over−Current Protection (AOCP)
When the secondary rectifier diodes or the transformer pin
are shorted, a steep current with extremely high di/dt can
flow through the SENSEFET during the LEB time. Even
though the power switch has overload protection, it is not
enough to protect the power switch in that abnormal case,
since severe current stress is imposed on the SENSEFET
until OLP triggers. The power switch includes the internal
Abnormal Over−Current Protection (AOCP) circuit shown
in Figure . When the gate turn−on signal is applied to the
power SENSEFET, the AOCP block is enabled and
monitors the current through the sensing resistor. The
voltage across the resistor is compared with a preset AOCP
level. If the sensing resistor voltage is greater than the AOCP
level, the set signal is applied to the latch, resulting in the
shutdown of the SMPS.
Fault
removed
VCC
12 V
8V
t
Normal
operation
Fault
Normal
operation
Figure 17. Auto−Restart Protection Waveforms
2.5 R
Overload Protection (OLP)
Overload is defined as the load current exceeding a
pre−set level due to an unexpected event. In this situation,
the protection circuit should be activated to protect the
SMPS. However, even when the SMPS is operating
normally, the overload protection (OLP) circuit can be
activated during the load transition or startup. To avoid this
undesired operation, the OLP circuit is designed to be
activated after a specified time to determine whether it is a
transient situation or a true overload situation.
In conjunction with the IPK current limit pin (if used), the
current−mode feedback path limits the current in the
SENSEFET when the maximum PWM duty cycle is
attained. If the output consumes more than this maximum
power, the output voltage (VO) decreases below its rating
voltage. This reduces the current through the opto−coupler
LED, which also reduces the opto−coupler transistor
current, increasing the feedback voltage (VFB). If VFB
exceeds 2.4 V, the feedback input diode is blocked and the
5 mA current source (IDELAY) starts to charge CFB slowly up
to VCC. In this condition, VFB increases until it reaches 6 V,
when the switching operation is terminated, as shown in
Figure 18. The shutdown delay is the time required to charge
CFB from 2.4 V to 6 V with 5 mA current source.
R
Gate
Driver
LEB
RSENSE
AOCP
VAOCP
2
GND
Figure 19. Abnormal Over−Current Protection
Thermal Shutdown (TSD)
The SENSEFET and the control IC are integrated, making
it easier to detect the temperature of the SENSEFET. When
the temperature exceeds approximately 137°C, thermal
shutdown is activated.
Over−Voltage Protection (OVP)
In the event of a malfunction in the secondary−side
feedback circuit or an open feedback loop caused by a
soldering defect, the current through the opto−coupler
transistor becomes almost zero. Then, VFB climbs up in a
similar manner to the overload situation, forcing the preset
maximum current to be supplied to the SMPS until the
overload protection is activated. Because excess energy is
provided to the output, the output voltage may exceed the
rated voltage before the overload protection is activated,
resulting in the breakdown of the devices in the secondary
side. To prevent this situation, an Over−Voltage Protection
(OVP) circuit is employed. In general, VCC is proportional
to the output voltage and the power switch uses VCC instead
of directly monitoring the output voltage. If VCC exceeds
24 V, OVP circuit is activated, resulting in termination of the
switching operation. To avoid undesired activation of OVP
during normal operation, VCC should be designed to be
below 24 V.
Overload Protection
6V
2.4 V
t12 = CFB x (V (t2) − V (t1)) / IDELAY
t2
S Q
R Q
VFB
t1
OSC
PWM
t
Figure 18. Overload Protection (OLP)
www.onsemi.com
9
FSL116HR
Burst Mode Operation
Output−Short Protection (OSP)
If the output is shorted, steep current with extremely high
di/dt can flow through the SENSEFET during the LEB time.
Such a steep current brings high−voltage stress on the drain
of SENSEFET when turned off. To protect the device from
such an abnormal condition, OSP detects VFB and
SENSEFET turn−on time. When the VFB is higher than
1.6 V and the SENSEFET turn−on time is lower than 1.0 ms,
the FPS recognizes this condition as an abnormal error and
shuts down PWM switching until VCC reaches VSTART
again. An abnormal condition output is shown in Figure 20.
MOSFET
Drain
Current
Rectifier
Diode
Current
To minimize power dissipation in Standby Mode, the FPS
enters Burst Mode. As the load decreases, the feedback
voltage decreases. As shown in Figure 22, the device
automatically enters Burst Mode when the feedback voltage
drops below VBURH. Switching continues, but the current
limit is fixed internally to minimize flux density in the
transformer. The fixed current limit is larger than that
defined by VFB = VBURH and, therefore, VFB is driven down
further. Switching continues until the feedback voltage
drops below VBURL. At this point, switching stops and the
output voltages start to drop at a rate dependent on the
standby current load. This causes the feedback voltage to
rise. Once it passes VBURH, switching resumes. The
feedback voltage then falls and the process repeats. Burst
Mode alternately enables and disables switching of the
SENSEFET and reduces switching loss in Standby Mode.
Turn−off Delay
ILIM
VFB
VOUT
Minimum
Turn−on Time
1.6 ms
D
VO
VOset
Output Short Occurs
IOUT
VFB
0.7 V
0.5 V
Figure 20. Output Short Waveforms (OSP)
IDS
SOFT−START
The FPS has an internal soft−start circuit that slowly
increases the feedback voltage, together with the
SENSEFET current, after it starts. The typical soft−start
time is 20 ms, as shown in Figure 21, where progressive
increments of the SENSEFET current are allowed during the
startup phase. The pulse width to the power switching device
is progressively increased to establish the correct working
conditions for transformers, inductors, and capacitors. The
voltage on the output capacitors is progressively increased
with the intention of smoothly establishing the required
output voltage. Soft−start helps to prevent transformer
saturation and reduces the stress on the secondary diode.
VDS
time
Switching
t1 disabled
t4
Figure 22. Burst−Mode Operation
Adjusting Peak Current Limit
As shown in Figure 23, a combined 6 kW internal
resistance is connected to the non−inverting lead on the
PWM comparator. An external resistance of Rx on the
current limit pin forms a parallel resistance with the 6 kW
when the internal diodes are biased by the main current
source of 400 mA. For example, FSL116HR has a typical
SENSEFET peak current limit (ILIM) of 1.1 A. ILIM can be
adjusted to 0.8 A by inserting Rx between the IPK pin and the
ground. The value of the Rx can be estimated by the
following equations:
1.25 ms
ILIM
16 Steps
Current Limit
0.25 ILIM
t2
Switching
t3 disabled
Drain
Current
1.1 A : 0.8 A + 6 kW : X kW
X + Rx ø 6 kW
Figure 21. Internal Soft−Start
where X is the resistance of the parallel network.
www.onsemi.com
10
(eq. 1)
(eq. 2)
FSL116HR
VCC
VCC
IDELAY
IFB
400 mA
VFB
PWM
3
4.25 kW
IPK
Rx
1.7 kW
4
Current
Sense
Figure 23. Peak Current Limit Adjustment
SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.42x6.38, 2.54P
CASE 646CM
ISSUE O
DATE 31 JUL 2016
9.83
9.00
5
8
6.670
6.096
1
4
8.255
7.610
TOP VIEW
1.65
1.27
(0.56)
7.62
3.683
3.200
5.08 MAX
3.60
3.00
0.33 MIN
0.560
0.355
2.54
15°
0°
0.356
0.200
7.62
9.957
7.870
FRONT VIEW
SIDE VIEW
NOTES:
A. CONFORMS TO JEDEC MS−001, VARIATION BA
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M−2009
DOCUMENT NUMBER:
DESCRIPTION:
98AON13468G
PDIP8 9.42X6.38, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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