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FSL206MRBN

FSL206MRBN

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DIP8

  • 描述:

    IC FPS POWER SWITCH 8-MDIP

  • 数据手册
  • 价格&库存
FSL206MRBN 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Green Mode Power Switch FSL206MR Description The FSL206MR integrated Pulse−Width Modulator (PWM) and SENSEFET® is specifically designed for high−performance offline Switched−Mode Power Supplies (SMPS) while minimizing external components. This device integrates high−voltage power regulators that combine an avalanche−rugged SENSEFET with a Current−Mode PWM control block. The integrated PWM controller includes: a 7.8 V regulator, eliminating the need for auxiliary bias winding; Under−Voltage Lockout (UVLO) protection; Leading−Edge Blanking (LEB); an optimized gate turn−on/turn−off driver; EMI attenuator; Thermal Shutdown (TSD) protection; temperature−compensated precision current sources for loop compensation; soft−start during startup; and fault−protection circuitry such as Overload Protection (OLP), Over−Voltage Protection (OVP), Abnormal Over−Current Protection (AOCP), and Line Under−Voltage Protection (LUVP). The internal high−voltage startup switch and the Burst−Mode operation with very low operating current reduce the power loss in Standby Mode. As a result, it is possible to reach a power loss of 150 mW with no bias winding and 25 mW (for FSL206MR) or 30 mW (for FSL206MRBN) with a bias winding under no−load conditions when the input voltage is 265 Vac. www.onsemi.com PDIP8 9.42x6.38, 2.54P CASE 646CM PDIP8 9.59x6.6, 2.54P CASE 646CN PDIP8 GW CASE 709AJ MARKING DIAGRAM Features • Internal Avalanche−Rugged SENSEFET 650 V • Precision Fixed Operating Frequency: 67 kHz • No−Load < 150 mW at 265 Vac without Bias Winding; 2V VCC Q Q VCC Good Figure 2. Internal Block Diagram www.onsemi.com 2 FSL206MR PIN CONFIGURATION GND VCC VFB Drain 8−DIP 8−LSOP Drain Drain VSTR LS Figure 3. Pin Configuration PIN DEFINITIONS Pin No. Name Description 1 GND Ground. SENSEFET source terminal on the primary side and internal control ground. 2 VCC Positive Supply Voltage Input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (VSTR) via an internal switch during startup (see Figure 2). Once VCC reaches the UVLO upper threshold (12 V), the internal startup switch opens and device power is supplied via the auxiliary transformer winding. 3 VFB Feedback Voltage. Non−inverting input to the PWM comparator, with a 0.11 mA current source connected internally and a capacitor and opto−coupler typically connected externally. There is a delay while charging external capacitor CFB from 2.4 V to 5 V using an internal 2.7 mA current source. This delay prevents false triggering under transient conditions, but allows the protection mechanism to operate under true overload conditions. 4 LS Line Sense Pin This pin is used to protect the device when the input voltage is lower than the rated input voltage range. If this pin is not used, connect to ground. 5 VSTR Startup. Connected to the rectified AC line voltage source. At startup, the internal switch supplies internal bias and charges an external storage capacitor placed between the VCC pin and ground. Once VCC reaches 8 V, all internal blocks are activated. After that, the internal high−voltage regulator (HV REG) turns on and off irregularly to maintain VCC at 7.8 V. 6, 7, 8 Drain Drain. Designed to connect directly to the primary lead of the transformer and capable of switching a maximum of 650 V. Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance. www.onsemi.com 3 FSL206MR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Min Max Unit VSTR VSTR Pin Voltage Parameter −0.3 650 V VDS Drain Pin Voltage −0.3 650 V VCC Supply Voltage − 26 V VLS LS Pin Voltage − Internally Clamped Voltage (Note 4) V VFB Feedback Voltage Range −0.3 Internally Clamped Voltage (Note 4) V IDM Drain Current Pulsed (Note 5) − 1.5 A EAS Single−Pulsed Avalanche Energy (Note 6) − 11 mJ PD Total Power Dissipation − 1.3 W TJ Operating Junction Temperature −40 +150 °C TA Operating Ambient Temperature −40 +125 °C TSTG Storage Temperature −55 +150 °C ESD Human Body Model, JESD22−A114 − 4 kV Charged Device Model, JESD22−C101 − 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. VFB is clamped by internal clamping diode (13 V ICLAMP_MAX < 100 mA). After Shutdown, before VCC reaching VSTOP, VSD < VFB < VCC. 5. Repetitive rating: pulse−width limited by maximum junction temperature. 6. L = 21 mH, starting TJ = 25°C THERMAL IMPEDANCE (TA = 25°C unless otherwise specified) Symbol qJA Parameter Value Unit 93 °C/W Junction−to−Ambient Thermal Impedance (Note 7) 7. JEDEC recommended environment, JESD51−2 and test board, JESD51−10 with minimum land pattern for 8DIP and JESD51−3 with minimum land pattern for 8LSOP. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 mA 650 − − V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 50 mA VDS = 520 V, VGS = 0 V, TA = 125°C (Note 8) − − 250 mA Drain−Source On−State Resistance (Note 9) VGS = 10 V, ID = 0.3 A − 14 19 W CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 162 − pF COSS Output Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 14.9 − pF CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 2.7 − pF BVDSS IDSS RDS(ON) tr Rise Time VDS = 325 V, ID = 0.5 A, RG = 25 W − 6.1 − ns tf Fall Time VDS = 325 V, ID = 0.5 A, RG = 25 W − 43.6 − ns Switching Frequency VFB = 4 V, VCC = 10 V 61 67 73 KHz DfOSC Switching Frequency Variation −25°C < TJ < 85°C − ±5 ±10 % fM Frequency Modulation (Note 8) − ±3 − kHz CONTROL SECTION fOSC DMAX Maximum Duty Cycle VFB = 4 V, VCC = 10 V 66 72 78 % DMIN Minimum Duty Ratio VFB = 0 V, VCC = 10 V 0 0 0 % www.onsemi.com 4 FSL206MR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (continued) Symbol VSTART Parameter UVLO Threshold Voltage VSTOP Test Condition Min Typ Max Unit VFB = 0 V, VCC Sweep 7 8 9 V After Turn−on 6 7 8 V IFB Feedback Source Current VFB = 0, VCC = 10 V 90 110 130 mA tS/S Internal Soft−Start Time VFB = 4 V, VCC = 10 V 10 15 20 ms BURST−MODE SECTION VBURH VBURL HYSBUR Burst−Mode HIGH Threshold Voltage VCC = 10 V VFB Increase Burst−Mode LOW Threshold Voltage VCC = 10 V VFB Decrease Burst−Mode Hysteresis FSL206MR 0.66 0.83 1.00 V FSL206MRB 0.40 0.50 0.60 V FSL206MR 0.59 0.74 0.89 V FSL206MRB 0.28 0.35 0.42 V FSL206MR − 90 − mV FSL206MRB − 150 − mV 0.54 0.60 0.66 A − 100 − ns PROTECTION SECTION ILIM Peak Current Limit tCLD Current Limit Delay Time (Note 8) VSD Shutdown Feedback Voltage VCC = 10 V 4.5 5.0 5.5 V Shutdown Delay Current VFB = 4 V 2.1 2.7 3.3 mA 250 − − ns − 0.7 − V IDELAY tLEB VFB = 4 V, di/dt = 300 mA/ms, VCC = 10 V Leading Edge Blanking Time (Note 8) VAOCP Abnormal Over−Current Protection (Note 8) VOVP Over−Voltage Protection VFB = 4 V, VCC Increase 23.0 24.5 26.0 V VLS_OFF Line−Sense Protection On to Off VFB = 3 V, VCC = 10 V, VLS Decrease 1.9 2.0 2.1 V VLS_ON Line−Sense Protection Off to On VFB = 3 V, VCC = 10 V, VLS Increase 1.4 1.5 1.6 V TSD Thermal Shutdown Temperature (Note 8) 125 135 150 °C − 60 − °C − 7.8 − V HYSTSD TSD Hysteresis Temperature (Note 8) HIGH VOLTAGE REGULATOR SECTION HHVR HV Regulator Voltage VFB = 0 V, VSTR = 40 V TOTAL DEVICE SECTION IOP1 Operating Supply Current (Control VCC = 15 V, 0 V < VFB < VBURL Part Only, without Switching) − 0.3 0.5 mA IOP2 Operating Supply Current (Control VCC = 8 V, 0 V < VFB < VBURL Part Only, without Switching) − 0.25 0.45 mA IOP3 Operating Supply Current (Note 8) VCC = 15 V, VBURL < VFB < VSD (While Switching) − − 1.3 mA ICH Startup Charging Current VCC = 0 V, VSTR > 40 V 1.6 1.9 2.4 mA ISTART Startup Current VCC = Before VSTART, VFB = 0 V − 100 150 mA VSTR Minimum VSTR Supply Voltage VCC = VFB = 0 V, VSTR Increase − 26 − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Though guaranteed by design, it is not 100% tested in production. 9. Pulse test: pulse width = 300 ms, duty cycle = 2%. www.onsemi.com 5 FSL206MR TYPICAL PERFORMANCE CHARACTERISTICS HV Regulator Voltage  (VHVR) Operating Frequency (f OSC) 1.4 1.4 1.3 1.3 1.2 1.2 1.1 1.1 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 ‐40℃ ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ 115℃ ‐40℃ Figure 4. Operating Frequency vs. Temperature ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ Figure 5. HV Regulator Voltage vs. Temperature Stop Theshold Voltage  (VSTOP) Start Theshold Voltage (VSTART) 1.4 1.4 1.3 1.3 1.2 1.2 1.1 1.1 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 ‐40℃ ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ ‐40℃ 110℃ Figure 6. Start Threshold Voltage vs. Temperature ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ Figure 7. Stop Threshold Voltage vs. Temperature Feedback Source Current (IFB) Peak Current Limit (ILIM) 1.4 1.4 1.3 1.3 1.2 1.2 1.1 1.1 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 ‐40℃ ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ ‐40℃ 110℃ Figure 8. Feedback Source Current vs. Temperature ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ Figure 9. Peak Current Limit vs. Temperature www.onsemi.com 6 FSL206MR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (These Characteristic graphs are normalized at TA = 25.) Startup Charging Current (ICH) Operating Supply Current (Iop1)  1.4 1.4 1.3 1.3 1.2 1.2 1.1 1.1 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 ‐40℃ ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ ‐40℃ Figure 10. Startup Charging Current vs. Temperature ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ Figure 11. Operating Supply Current 1 vs. Temperature Operating Supply Current (Iop2) Over‐Voltage  Protection (VOVP) 1.4 1.4 1.3 1.3 1.2 1.2 1.1 1.1 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 ‐40℃ ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ ‐40℃ Figure 12. Operating Supply Current 2 vs. Temperature Shutdown Delay Current (IDELAY) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 ‐25℃ 0℃ 25℃ 50℃ 75℃ 90℃ 0℃ 25℃ 50℃ 75℃ 90℃ 110℃ Figure 13. Over−Voltage Protection Voltage vs. Temperature 1.4 ‐40℃ ‐25℃ 110℃ Figure 14. Shutdown Delay Current vs. Temperature www.onsemi.com 7 FSL206MR FUNCTIONAL DESCRIPTION Feedback Control FSL206MR employs current−mode control, as shown in Figure 17. An opto−coupler (such as the FOD817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the shunt regulator reference pin voltage exceeds the internal reference voltage of 2.5 V, the optocoupler LED current increases, the feedback voltage VFB is pulled down, and the duty cycle is reduced. This typically occurs when the input voltage is increased or the output load is decreased. Startup At startup, an internal high−voltage current source supplies the internal bias and charges the external capacitor (CA) connected with the VCC pin, as illustrated in Figure 15. An internal high−voltage regulator (HV REG) located between the VSTR and VCC pins regulates the VCC to 7.8 V and supplies operating current. Therefore, FSL206MR needs no auxiliary bias winding. VDC,link VSTR VCC 3 7.8V ICH 2 HV/REG ISTART CA VREF UVLO Figure 15. Startup Block Oscillator Block Figure 17. Pulse−Width−Modulation (PWM) Circuit The oscillator frequency is set internally and the power switch has a random frequency fluctuation function. Fluctuation of the switching frequency of a switched power supply can reduce EMI by spreading the energy over a wider frequency range than the bandwidth measured by the EMI test equipment. The amount of EMI reduction is directly related to the range of the frequency variation. The range of frequency variation is fixed internally; however, its selection is randomly chosen by the combination of external feedback voltage and internal free−running oscillator. This randomly chosen switching frequency effectively spreads the EMI noise nearby switching frequency and allows the use of a cost−effective inductor instead of an AC input line filter to satisfy the world−wide EMI requirements. IDS several mseconds Leading−Edge Blanking (LEB) At the instant the internal SENSEFET is turned on, the primary−side capacitance and secondary−side rectifier diode reverse recovery typically cause a high−current spike through the SENSEFET. Excessive voltage across the RSENSE resistor leads to incorrect feedback operation in the current−mode PWM control. To counter this effect, the power switch employs a leading−edge blanking (LEB) circuit (see the Figure 17). This circuit inhibits the PWM comparator for a short time (tLEB) after the SENSEFET is turned on. Protection Circuits The protective functions include Overload Protection (OLP), Over−Voltage Protection (OVP), Under−Voltage Lockout (UVLO), Line Under−Voltage Protection (LUVP), Abnormal Over−Current Protection (AOCP), and thermal shutdown power switch. Because these protection circuits are fully integrated inside the IC without external components, reliability is improved without increasing cost. Once a fault condition occurs, switching is terminated and the SENSEFET remains off. This causes VCC to fall. When VCC reaches the UVLO stop voltage VSTOP (7 V), the protection is reset and the internal high− voltage current source charges the VCC capacitor via the VSTR pin. When VCC reaches the UVLO start voltage VSTART (8 V), the FPS resumes normal operation. In this manner, auto−restart can alternately enable and disable the switching of the power SENSEFET until the fault condition is eliminated. tSW=1/fSW tSW Dt fSW t fSW+1/2DfSW no repetition several milliseconds fSW-1/2DfSW MAX MAX t Figure 16. Frequency Fluctuation Waveform www.onsemi.com 8 FSL206MR Abnormal Over−Current Protection (AOCP) When the secondary rectifier diodes or the transformer pin are shorted, a steep current with extremely high di/dt can flow through the SENSEFET during the LEB time. Even though the power switch has OLP (Overload Protection), it is not enough to protect the FPS in that abnormal case, since severe current stress is imposed on the SENSEFET until OLP triggers. The power switch includes the internal AOCP (Abnormal Over−Current Protection) circuit shown in Figure 20. When the gate turn−on signal is applied to the power SENSEFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS. Figure 18. Auto−Restart Protection Waveforms Overload Protection (OLP) Overload is defined as the load current exceeding a preset level due to an unexpected event. In this situation, the protection circuit should be activated to protect the SMPS. However, even when the SMPS is operating normally, the overload protection (OLP) circuit can be activated during the load transition or startup. To avoid this undesired operation, the OLP circuit is activated after a specified time to determine whether it is a transient situation or a true overload situation. The Current−Mode feedback path limits the current in the SENSEFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its rating voltage. This reduces the current through the opto−coupler LED, which also reduces the opto−coupler transistor current, increasing the feedback voltage (VFB). If VFB exceeds 2.4 V, the feedback input diode is blocked and the 2.7 mA current source (IDELAY) starts to charge CFB slowly up. In this condition, VFB increases until it reaches 5 V, when the switching operation is terminated, as shown in Figure 19. The shutdown delay is the time required to charge CFB from 2.4 V to 5 V with 2.7 mA current source. Figure 20. Abnormal Over−Current Protection Thermal Shutdown (TSD) The SENSEFET and control IC being integrated makes it easier to detect the temperature of the SENSEFET. When the junction temperature exceeds ~135°C, thermal shutdown is activated and the power switch is restarted after temperature decreases to 60°C. Over−Voltage Protection (OVP) In the event of a malfunction in the secondary−side feedback circuit or an open feedback loop caused by a soldering defect, the current through the opto−coupler transistor becomes almost zero (refer to Figure 17). Then VFB climbs up in a similar manner to the overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection is activated. Because excess energy is provided to the output, the output voltage may exceed the rated voltage before the overload protection is activated, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an over−voltage protection (OVP) circuit is employed. In general, VCC is proportional to the output voltage and the FPS uses VCC instead of directly monitoring the output voltage. If VCC exceeds 24.5 V, OVP circuit is activated, resulting in termination of the switching operation. To avoid undesired activation of OVP during normal operation, VCC should be designed to be below 24.5 V. VFB Overload Protection 2.4V t12 = CFB × (V(t2 )−V(t1 )) / IDELAY t1 t2 t Figure 19. Overload Protection (OLP) www.onsemi.com 9 FSL206MR Line Under−Voltage Protection (LUVP) Burst Operation If the input voltage of the converter is lower than the minimum operating voltage, the converter input current increases too much, causing components failure. If the input voltage is low, the converter should be protected. In the FSL206MR, the LUVP circuit senses the input voltage using the LS pin and, if this voltage is lower than 1.5 V, the LUVP signal is generated. The comparator has 0.5 V hysteresis. If the LUVP signal is generated, the output drive block is shut down and the output voltage feedback loop is saturated. To minimize power dissipation in Standby Mode, the power switch enters Burst Mode. As the load decreases, the feedback voltage decreases. As shown in Figure 23, the device automatically enters Burst Mode when the feedback voltage drops below VBURH. Switching continues until the feedback voltage drops below VBURL. At this point, switching stops and the output voltages start to drop at a rate dependent on the standby current load. This causes the feedback voltage to rise. Once it passes VBURH, switching resumes. The feedback voltage then falls and the process repeats. Burst Mode alternately enables and disables switching of the SENSEFET and reduces switching loss in Standby Mode. − + Figure 21. Line UVP Circuit Soft−Start The FSL206MR has an internal soft−start circuit that slowly increases the feedback voltage, together with the SENSEFET current, after it starts. The typical soft−start time is 15 ms, as shown in Figure 22, where progressive increments of the SENSEFET current are allowed during the startup phase. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. It also helps prevent transformer saturation and reduce the stress on the secondary diode. Figure 23. Burst−Mode Operation Figure 22. Internal Soft−Start SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP8 9.42x6.38, 2.54P CASE 646CM ISSUE O DATE 31 JUL 2016 9.83 9.00 5 8 6.670 6.096 1 4 8.255 7.610 TOP VIEW 1.65 1.27 (0.56) 7.62 3.683 3.200 5.08 MAX 3.60 3.00 0.33 MIN 0.560 0.355 2.54 15° 0° 0.356 0.200 7.62 9.957 7.870 FRONT VIEW SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS−001, VARIATION BA B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D. DIMENSIONS AND TOLERANCES PER ASME Y14.5M−2009 DOCUMENT NUMBER: DESCRIPTION: 98AON13468G PDIP8 9.42X6.38, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP8 9.59x6.6, 2.54P CASE 646CN ISSUE O DATE 31 JUL 2016 [ ] 0.400 10.160 0.355 9.017 8 5 [ ] 0.280 7.112 0.240 6.096 1 HALF LEAD STYLE 4X 0.031 [0.786] MIN MAX 0.210 [5.334] 4 FULL LEAD STYLE 4X 0.010 [0.252] MIN 0.195 4.965 0.115 2.933 [ ] [ ] 0.325 8.263 0.300 7.628 0.015 [0.389] GAGE PLANE PIN 1 INDICATOR SEATING PLANE [ ] 0.150 3.811 0.115 2.922 C MIN 0.015 [0.381] 0.100 [2.540] (0.031 [0.786])4X 0.430 [10.922] MAX [ ] 0.022 0.562 0.014 0.358 0.10 0.300 [7.618] 0.070 1.778 4X FOR 1/2 LEAD STYLE 0.045 1.143 8X FOR FULL LEAD STYLE [ ] C NOTES: A)THIS PACKAGE CONFORMS TO JEDEC MS−001 VARIATION BA WHICH DEFINES 2 VERSIONS OF THE PACKAGE TERMINAL STYLE WHICH ARE SHOWN HERE. B) CONTROLING DIMS ARE IN INCHES C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. D) DIMENSION S AND TOLERANCES PER ASME Y14.5M−2009 DOCUMENT NUMBER: STATUS: 98AON13470G ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 http://onsemi.com PDIP8 9.59X6.6, 2.54P 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13470G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD N08M TO ON SEMICONDUCTOR. REQ. BY I. CAMBALIZA. DATE 31 JUL 2016 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. O Case Outline Number: 646CN MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP8 GW CASE 709AJ ISSUE O DATE 31 JAN 2017 DOCUMENT NUMBER: STATUS: 98AON13756G ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 PDIP8 GW http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13756G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD MKT−MLSOP08A TO ON SEMICONDUCTOR. REQ. BY D. TRUHITTE. DATE 31 JAN 2017 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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