H11C63S

PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package FEATURES • • • • • High efficiency, low degradation, liquid epitaxial LED Underwriters Laboratory (UL) recognized fl File #E90700 VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300) 200V/400V Peak blocking voltage High isolation voltage - 5300V AC (RMS) APPLICATIONS • • • • • • • • • Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. 10 A, T2L compatible, solid state relay 25 W logic indicator lamp driver 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3) 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6) © 2003 Fairchild Semiconductor Corporation Page 1 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 Parameter H11C4 Symbol H11C5 Device Value H11C6 Units TOTAL DEVICE Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C EMITTER Continuous Forward Current IF All 60 mA Reverse Voltage VR All 6 V IF(pk) All 3.0 A PD All 100 mW 1.33 mW/°C PD All 400 mW 5.3 mW/°C PD All VGR Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation Derate above 25°C DETECTOR Power Dissipation (ambient) Derate linearly above 25°C ambient Power Dissipation (case) Derate linearly above 25°C case Peak Reverse Gate Voltage RMS On-State Current 1 W 13.3 mW/°C All 6 V IDM (RMS) All 300 mA Peak On-State Current (100 µS, 1% duty cycle) IDM (Peak) All 10 A Surge Current (10ms) IDM (Surge) All 5 A Peak Forward Voltage VDM H11C1, H11C2, H11C3 200 V Peak Forward Voltage VDM H11C4, H11C5, H11C6 400 V © 2003 Fairchild Semiconductor Corporation Page 2 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device IF = 10 mA VF All VR = 3 V IR All VF = 0 V, f = 1.0 MHz CJ All Min Typ* Max Unit 1.2 1.5 V 10 µA EMITTER Input Forward Voltage Reverse Leakage Current Capacitance 50 pF DETECTOR Off-State Voltage Reverse Voltage RGK = 10kΩ, TA = 100°C, ID = 50µA RGK = 10kΩ, TA = 100°C, ID = 150µA RGK = 10kΩ,TA = 100°C, IR = 50µA Reverse Current VRM RGK = 10kΩ,TA = 100°C, IR = 150µA On-State Voltage Off-State Current VDM ITM = 300 mA VTM VDM = 200V, TA = 100°C, IF = 0 mA, RGK = 10kΩ H11C1, H11C2, H11C3 200 H11C4, H11C5, H11C6 400 H11C1, H11C2, H11C3 200 H11C4, H11C5, H11C6 400 All V V 1.2 1.3 V H11C1, H11C2, H11C3 50 µA H11C4, H11C5, H11C6 150 H11C1, H11C2, H11C3 50 H11C4, H11C5, H11C6 150 IDM VDM = 400V, TA = 100°C, IF = 0 mA, RGK = 10kΩ VRM = 200 V, TA = 100 °C, IF = 0 mA, RGK = 10kΩ IRM VRM = 400 V, TA = 100 °C, IF = 0 mA, RGK = 10kΩ µA TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) Characteristics Test Conditions Symbol VAK = 50 V, RGK = 10 kΩ Input Current to Trigger IFT VAK = 100 V, RGK = 27 kΩ Coupled dv/dt, input to output (figure 8) dv/dt Device Min Typ* Max H11C1,H11C2, H11C4, H11C5 20 H11C3, H11C6 30 H11C1,H11C2, H11C4, H11C5 11 H11C3, H11C6 14 ALL 500 Units mA V/µS *Typical values at TA = 25°C © 2003 Fairchild Semiconductor Corporation Page 3 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Isolation Voltage (t = 1 min.) (note 1) VISO 5300 (note 1) (VI-O = 500 VDC) RISO 1011 (note 1) (f = 1 MHz, VI-O = 0) CI-O Isolation Resistance Isolation Capacitance Typ* Max Units V Ω 0.8 pF *Typical values at TA = 25°C Note 1. For this test, LED pins 1 and 2 are common, and SCR pins 4, 5 and 6 are common. © 2003 Fairchild Semiconductor Corporation Page 4 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 Figure 1. LED Forward Current vs. Forward Voltage H11C6 Figure 2. Trigger Current vs Anode-Cathode Voltage 100 100 10 TA = 25˚C TA = -40˚C TA = 100˚C 1 0.1 0.0 R GK = 300 ohm IFT , NORMALIZED TRIGGER CURRENT FORWARD CURRENT - IF (mA) H11C5 10 R GK = 1K R GK = 10K 1 R GK = 27K RGK = 56K NORMALIZED TO VAK = 50V R GK = 10K TA = 25oC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 VAK, ANODE-CATHODE VOLTAGE (V) FORWARD VOLTAGE - VF (V) Figure 3. Input Trigger Current vs. Temperature Figure 4. Off-State Current vs. Temperature R GK = 300 ohm 10 R GK = 1K R GK = 10K 1 R GK = 27K R GK = 56K NORMALIZED TO TA = 25 oC R GK = 10K VAK = 50V 0.1 -60 -40 -20 0 20 40 60 TA, AMBIENT TEMPERATURE ( oC) 80 100 I DM , OFF-STATE FORWARD CURRENT, NORMALIZED IFT , INPUT TRIGGER CURRENT, NORMALIZED 1000 100 VAK = 400V 10 VAK = 200V VAK = 50V 1 NORMALIZED TO TA = 25oC VAK = 50V 0.1 0 20 40 60 80 100 o T A, AMBIENT TEMPERATURE ( C) © 2003 Fairchild Semiconductor Corporation Page 5 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 Figure 6. On-State Characteristics 1000 Figure 5. Forward Blocking Voltage, VDM vs. Temperature 700 R GK = 10K, 20K ON-STATE CURRENT - ITM (mA) V DM , FORWARD BLOCKING VOLTAGE (V) 650 600 550 R GK = 50K 500 R GK = 100K 450 100 ˚ TA = 25 C ˚ TA = 100 C 10 400 350 300 0 20 40 60 80 100 1 0.0 o TA , AMBIENT TEMPERATURE ( C) 0.5 1.0 1.5 2.0 2.5 3.0 ON-STATE VOLTAGE - VTM (V) Figure 7. Holding Current, IH vs. Temperature 10000 IH , HOLDING CURRENT (µA) RGK = 300 ohm RGK = 1K 1000 RGK = 10K 100 RGK = 27K RGK = 56K 10 -60 -40 -20 0 20 40 60 80 100 o T A, AMBIENT TEMPERATURE ( C) © 2003 Fairchild Semiconductor Corporation Page 6 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 TYPICAL APPLICATIONS 10A, T2L COMPATIBLE, SOLID STATE RELAY LOAD 47 Ω Use of the H11C4 for high sensitivity, 5300 V isolation capability, provides this highly reliable solid state relay design. This design is compatible with 74, 74S and 74H series T2L logic systems inputs and 120V AC (H11C1, H11C2, H11C3) or 220V AC (H11C4, H11C5, H11C6) loads up to 10A. 470 Ω 100 Ω +5V "CONTACT" 120 VAC (H11C1, H11C2, H11C3) 220 VAC (H11C4, H11C5, H11C6) H11CX "COIL" SC146D 0.1 µF 56K 47 Ω IN5060 (4) 25W, LOGIC INDICATOR LAMP DRIVER INDICATOR LAMP The high surge capability and non-reactive input characteristics of the H11C allow it to directly couple, without buffers, T2L and DTL logic to indicator alarm devices, without danger of introducing noise and logic glitches. 470 Ω +5V H11CX 100 Ω LOGIC INPUT 120 VAC (H11C1, H11C2, H11C3) 220 VAC (H11C4, H11C5, H11C6) 0.1 µF 56K 200V/400V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the H11C provides a 400V transistor capable of conducting positive and negative signals with current transfer ratios of over 1%. This function is useful in remote instrumentation, high voltage power supplies and test equipment. Care should be taken not to exceed the H11C 400mW power dissipation rating when used at high voltages. H11CX INPUT OUTPUT +100 VAC Vp = 800 Volts tp = .010 Seconds f = 25 Hertz TA = 25 °C 100 Ω H11C4 + H Vp Vp .63 Vp tp dv / dt EXPONENTIAL RAMP GEN. 10 KΩ OSCILLOSCOPE Fig. 8 Coupled dv/dt - Test Circuit © 2003 Fairchild Semiconductor Corporation Page 7 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 Package Dimensions (Through Hole) H11C5 H11C6 Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) PIN 1 ID. 3 2 PIN 1 ID. 1 0.270 (6.86) 0.240 (6.10) SEATING PLANE 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 4 0.070 (1.78) 0.045 (1.14) 5 6 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.300 (7.62) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.100 (2.54) TYP Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.070 (1.78) 0.270 (6.86) 0.240 (6.10) 0.060 (1.52) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.415 (10.54) 0.070 (1.78) 0.045 (1.14) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.200 (5.08) 0.135 (3.43) 0.154 (3.90) 0.100 (2.54) 0.004 (0.10) MIN 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP Note All dimensions are in inches (millimeters) © 2003 Fairchild Semiconductor Corporation Page 8 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 ORDERING INFORMATION Option Order Entry Identifier Description .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and Reel W .W 0.4" Lead Spacing .300 VDE 0884 .300W VDE 0884, 0.4" Lead Spacing S 300 300W 3S 3SD .3S VDE 0884, Surface Mount .3SD VDE 0884, Surface Mount, Tape and Reel MARKING INFORMATION 1 H11C1 2 V XX YY K 6 3 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code © 2003 Fairchild Semiconductor Corporation Page 9 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 Carrier Tape Specifications 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 Ø1.55 ± 0.05 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 13.2 ± 0.2 9.55 ± 0.20 Ø1.6 ± 0.1 10.30 ± 0.20 0.1 MAX 16.0 ± 0.3 User Direction of Feed NOTE All dimensions are in inches (millimeters) Reflow Profile (Black Package, No Suffix) Temperature (°C) 300 215°C, 10–30 s 250 225 C peak 200 150 Time above 183°C, 60–150 sec 100 50 Ramp up = 3C/sec • Peak reflow temperature: 225°C (package surface temperature) • Time of temperature higher than 183°C for 60–150 seconds • One time soldering reflow is recommended 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) © 2003 Fairchild Semiconductor Corporation Page 10 of 11 3/19/03 PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 11 of 11 3/19/03