UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
24 A, 600 V
HGTG12N60C3D
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The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49123. The diode
used in anti parallel with the IGBT is the development type TA49061.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
Formerly Developmental Type TA49117.
C
G
E
E
C
G
Features
•
•
•
•
•
•
24 A, 600 V at TC = 25°C
Typical Fall Time 210 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti−Parallel Diode
This is a Pb−Free Device
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
G12N60C3D
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
G12N60C3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
April, 2020 − Rev. 2
1
Publication Order Number:
HGTG12N60C3D/D
HGTG12N60C3D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
HGTG12N60C3D
Unit
BVCES
600
V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
24
12
A
A
Average Diode Forward Current at 110°C
I(AVG)
15
A
ICM
96
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C
SSOA
24 A at 600 V
PD
104
W
0.83
W/°C
TJ, TSTG
−40 to 150
°C
Maximum Lead Temperature for Soldering
TL
260
°C
Short Circuit Withstand Time (Note 2) at VGE = 15 V
tSC
4
ms
Short Circuit Withstand Time (Note 2) at VGE = 10 V
tSC
13
ms
Collector to Emitter Voltage
Collector Current Pulsed (Note 1)
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ =125°C, RG = 25 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Parameter
Symbol
Collector to Emitter Breakdown Voltage
BVCES
IC = 250 mA, VGE = 0 V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10 mA, VGE = 0 V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
ICES
VCE(SAT)
Test Condition
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On−State Gate Charge
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
Typ
Max
Unit
600
−
−
V
15
25
−
V
VCE = BVCES
TC = 25°C
−
−
250
mA
VCE = BVCES
TC = 150°C
−
−
2.0
mA
IC = IC110, VGE = 15 V
TC = 25°C
−
1.65
2.0
V
TC = 150°C
−
1.85
2.2
V
TC = 25°C
−
1.80
2.2
V
TC = 150°C
−
2.0
2.4
V
TC = 25°C
3.0
5.0
6.0
V
−
−
±100
nA
VCE(PK) = 480 V
80
−
−
A
VCE(PK) = 600 V
24
−
−
A
IC = IC110, VCE = 0.5 BVCES
−
7.6
−
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15 V
−
48
55
nC
VGE = 20 V
−
62
71
nC
−
14
−
ns
−
16
−
ns
−
270
400
ns
−
210
275
ns
IC = 15 A, VGE = 15 V
Gate to Emitter Threshold Voltage
Min
IC = 250 mA, VCE = VGE
VGE = ±20 V
TJ = 150°C, VGE = 15 V,
RG = 25 W, L = 100 mH
TJ = 150°C,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15 V,
RG = 25 W,
L = 100 mH
Turn−On Energy
EON
−
380
−
mJ
Turn−Off Energy (Note 3)
EOFF
−
900
−
mJ
Diode Forward Voltage
VEC
−
1.7
2.0
V
IEC = 12 A
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2
HGTG12N60C3D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Diode Reverse Recovery Time
trr
Thermal Resistance
RqJC
Test Condition
Min
Typ
Max
Unit
IEC = 12 A, dIEC/dt = 100 A/ms
−
34
42
ns
IEC = 1.0 A, dIEC/dt = 100 A/ms
−
30
37
ns
IGBT
−
−
1.2
°C/W
Diode
−
−
1.5
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and
ending at the point where the collector current equals zero (ICE = 0 A). The HGTG12N60C3D was tested per JEDEC Standard No. 24−1
Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On
losses include diode losses.
TYPICAL PERFORMANCE CURVES
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
70
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
80
60
50
TC = 150°C
40
TC = 25°C
30
TC = −40°C
20
10
0
4
6
8
10
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
50
40
TC = −40°C
TC = 150°C
20
TC = 25°C
10
0
0
1
2
3
30
9.0 V
20
8.5 V
8.0 V
10
0
80
60
30
10.0 V
40
2
4
6
7.0 V
8
7.5 V
10
Figure 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, VGE = 10 V
70
50
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
80
60
0
14
12
VGE, GATE TO EMITTER VOLTAGE (V)
PULSE DURATION = 250 ms, DUTY CYCLE < 0.5%, TC = 25°C
80
VGE = 15 V
12.0 V
70
4
60
40
TC = 150°C
30
20
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
TC = 25°C
TC = −40°C
50
0
5
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, VGE = 15 V
70
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
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3
5
HGTG12N60C3D
VGE = 15 V
20
15
10
5
0
25
50
75
100
125
150
20
100
15
80
10
60
5
10
td(OFF)I, TURN−OFF DELAY TIME (ns)
td(ON)I, TURN−ON DELAY TIME (ns)
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
20
VGE = 15 V
5
10
15
20
25
30
400
14
20
15
VGE = 15 V
VGE = 10 V
200
100
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
300
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
VGE = 10 V
tfI FALL TIME (ns)
trI, TURN−ON RISE TIME (ns)
13
300
Figure 7. TURN−ON DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
100
12
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
11
Figure 6. SHORT CIRCUIT WITHSTAND TIME
50
10
40
tSC
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs. CASE TEMPERATURE
30
120
ISC
TC, CASE TEMPERATURE (°C)
100
140
VCE = 360 V, RG = 25 W, TJ = 125°C
VGE = 15 V
10
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
200
VGE = 10 V or 15 V
100
90
5
5
10
15
20
25
80
30
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN−ON RISE TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 10. TURN−OFF FALL TIME vs.
COLLECTOR TO EMITTER CURRENT
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4
30
ISC, PEAK SHORT CIRCUIT CURRENT (A)
25
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
ICE, DC COLLECTOR CURRENT (A)
TYPICAL PERFORMANCE CURVES (continued)
HGTG12N60C3D
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
1.5
VGE = 10 V
1.0
VGE = 15 V
0.5
0
5
10
15
20
25
30
3.0
TJ = 150°C, RG = 25 W, L = 100 mH, VCE(PK) = 480 V
2.5
2.0
1.5
VGE = 10 V or 15 V
1.0
0.5
0
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150°C, TC = 75°C,
RG = 25 W, L = 100 mH
100
VGE = 10 V
10
1
VGE = 15 V
fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I)
fMAX2 = (PD − PC) / (EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RqJC = 1.2°C/W
10
5
20
100
60
LIMITED BY
CIRCUIT
40
20
0
C, CAPACITANCE (pF)
VCE, COLLECTOR TO EMITTER
VOLTAGE (V)
C IES
1000
500
0
5
10
C OES
15
100
200
300
400
500
600
Figure 14. SWITCHING SAFE OPERATING AREA
1500
0
30
VCE(PK), COLLECTOR EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C RES
25
80
0
30
Figure 13. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
2000
20
TJ = 150°C, VGE = 15 V, RG = 25 W, L = 100 mH
ICE, COLLECTOR TO EMITTER CURRENT (A)
2500
15
Figure 12. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER
CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
Figure 11. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
200
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
VCE = 600 V
360
9
240
6
VCE = 400 V
VCE = 200 V
120
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
30
3
40
50
QG, GATE CHARGE (nC)
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 16. GATE CHARGE WAVEFORMS
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5
15
12
480
0
25
IG(REF) = 1.276 mA, RL = 50 W,TC = 25°C
600
0
60
VGE, GATE TO EMITTER VOLTAGE (V)
2.0
EOFF, TURN−OFF ENERGY LOSS (mJ)
EON, TURN−ON ENERGY LOSS (mJ)
TYPICAL PERFORMANCE CURVES (continued)
HGTG12N60C3D
ZqJC, NORMALIZED THERMAL RESPONSE
TYPICAL PERFORMANCE CURVES (continued)
100
0.5
0.2
t1
0.1
10
−1
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
0.01
SINGLE PULSE
10−2
10−5
10−4
10−3
10−2
10−1
100
101
t1, RECTANGULAR PULSE DURATION (s)
Figure 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
tr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
50
40
30
100°C
20
150°C
25°C
10
0
0
0.5
1.0
1.5
2.0
2.5
trr
30
ta
20
tb
10
0
3.0
TC = 25°C, dIEC/dt = 100 A/ms
40
0
5
VEC, FORWARD VOLTAGE (V)
10
15
Figure 18. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 19. RECOVERY TIMES vs. FORWARD CURRENT
TEST CIRCUIT AND WAVEFORMS
90%
L = 100 mH
RHRP1560
10%
VGE
EOFF
EON
VCE
RG = 25 W
90%
+
−
20
IEC, FORWARD CURRENT (A)
VDD = 480 V
10%
ICE
t d(OFF)I
t fI
t rI
t d(ON)I
Figure 20. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 21. SWITCHING TEST WAVEFORMS
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6
HGTG12N60C3D
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. tD(OFF)I and tD(ON)I are defined in
Figure 21.
Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. tD(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM − TC) /
RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss during turn−off. All
tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means, for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener Diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
ORDERING INFORMATION
Part Number
HGTG12N60C3D
NOTE:
Package
Brand
Shipping
TO−247
G12N60C3D
450 Units / Tube
When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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