IRF644B-FP001

IRF644B — N-Channel BFET MOSFET IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Features Description • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. • Low gate charge (Typ. 47 nC) • Low Crss (Typ. 30 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability D G D S Absolute Maximum Ratings Symbol VDSS ID G TO-220 TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) S IRF644B_FP001 250 Unit V 14 A 8.9 A 56 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 13.9 4.8 139 1.11 -55 to +150 mJ V/ns W W/°C °C 300 °C IRF644B-FP001 0.9 Unit °C/W dv/dt PD TJ, TSTG TL - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds (Note 3) Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W ©2001Semiconductor Components Industries, LLC. September-2017,Rev33 Publication Order Number: IRF644B-FP001/D Part Number IRF644B-FP001 Top Mark IRF644B Package TO-220 Electrical Characteristics Symbol Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 250 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.24 IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 μA VDS = 200 V, TC = 125°C -- -- 100 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.0 A -- 0.22 0.28 Ω gFS Forward Transconductance VDS = 40 V, ID = 7.0 A -- 11.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1600 pF -- 150 195 pF -- 30 40 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 14 A, RG = 25 Ω ) (Note 4) VDS = 200 V, ID = 14 A, VGS = 10 V (Note 4) -- 20 50 ns -- 115 240 ns -- 150 310 ns -- 95 200 ns -- 47 60 nC -- 6.2 -- nC -- 23 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A ISM -- -- 56 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 14 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 240 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 14 A, dIF / dt = 100 A/μs -- 1.96 -- μC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 3.9 mH, IAS = 14 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 14 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 IRF644B — N-Channel BFET MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 1 ID, Drain Current [A] ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 10V 1.2 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.5 VGS = 20V 0.9 0.6 0.3 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 10 20 30 40 50 10 0.2 0.4 0.6 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 1500 Coss 1000 Crss 1.2 1.4 1.6 1.8 12 VGS, Gate-Source Voltage [V] Ciss 2000 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 50V 10 2500 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 VDS = 125V VDS = 200V 8 6 4 2 ※ Note : ID = 14 A 0 -1 10 0 0 10 1 10 0 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics www.onsemi.com 3 Figure 6. Gate Charge Characteristics IRF644B — N-Channel BFET MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 7.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 15 Operation in This Area is Limited by R DS(on) 2 10 ID, Drain Current [A] 1 ms 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 10 9 6 3 -1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response ID, Drain Current [A] 12 100 μs Figure 10. Maximum Drain Current vs Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C (t) = 0 .9 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 10 t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 IRF644B — N-Channel BFET MOSFET Typical Characteristics 50KΩ 200nF 12V IRF644B — N-Channel BFET MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time IRF644B — N-Channel BFET MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 VDD IRF644B — N-Channel BFET MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com