KA5L0380RYDTU

www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Applications • SMPS for VCR, SVR, STB, DVD & DVCD • SMPS for Printer, Facsimile & Scanner • Adaptor for Camcorder TO-220F-4L 1 1. GND 2. Drain 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Internal bias #2 DRAIN SFET Good logic OSC 9V 5μA S 1mA #4 FB R 2.5R 1R − 0.1V S − Thermal S/D + 27V L.E.B + + 7.5V − Q R Q #1 GND Power on reset OVER VOLTAGE S/D Rev.1.0.7 ©2003 Fairchild Semiconductor Corporation KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage (1) IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.4 ADC EAS 358 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C VDGR 800 V VGS ±30 V IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.1 ADC Drain Current Pulsed Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation (2) EAS 95 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C TSTG -55 to +150 °C Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13μH, starting Tj = 25°C 2 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 650 - - V VDS=Max. Rating, VGS=0V - - 50 μA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 μA RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω gfs VDS=50V, ID=0.5A 2.0 - - S - 720 - KA5H0365R, KA5M0365R, KA5L0365R Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time - 40 - - 40 - - 150 - - 100 - - 150 - - 42 - - - 34 - 7.3 - - 13.3 - 800 - - V VDS=Max. Rating, VGS=0V - - 250 μA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 1000 μA RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 779 - tr Turn Off Delay Time td(off) Fall Time VGS=0V, VDS=25V, f=1MHz tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) pF nS nC KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time Turn Off Delay Time Fall Time tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, ID=50μA VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) - 75.6 - - 24.9 - - 40 - - 95 - - 150 - - 60 - - - 34 - 7.2 - - 12.1 - pF nS nC Note: 1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2% 1 2. S = ---R 3 KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V Initial Accuracy FOSC KA5H0365R KA5H0380R 90 100 110 kHz Initial Accuracy FOSC KA5M0365R KA5M0380R 61 67 73 kHz Initial Accuracy FOSC KA5L0365R KA5L0380R 45 50 55 kHz - ±5 ±10 % OSCILLATOR SECTION Frequency Change With Temperature (2) Maximum Duty Cycle Maximum Duty Cycle - -25°C≤Ta≤+85°C Dmax KA5H0365R KA5H0380R 62 67 72 % Dmax KA5M0365R KA5M0380R KA5L0365R KA5L0380R 72 77 82 % Ta=25°C, 0V