0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
KSA1244YTU

KSA1244YTU

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO-251-3

  • 描述:

    TRANS PNP 50V 5A I-PAK

  • 数据手册
  • 价格&库存
KSA1244YTU 数据手册
KSA1244 KSA1244 High Current Switching • Low Collector-Emitter Saturation Voltage • Complement to KSC3074 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 60 Units V VCEO VEBO Collector-Emitter Voltage - 50 V Emitter-Base Voltage -5 V IB Base Current -1 A IC Collector Current -5 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = - 10mA, IB = 0 ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 DC Current Gain VCE = - 1V, IC = - 1A VCE = - 1V, IC = - 3A VCE(Sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.15A VBE(Sat) Base-Emitter Saturation Voltage IC = - 3A, IC = - 0.15A Min. - 50 Typ. Max. Units V VCB = - 50V, IE = 0 -1 µA VEB = - 5V, IC = 0 -1 µA 70 30 240 - 0.9 -0.5 V -1.2 V fT Current Gain Bandwidth Product VCE = - 4V, IC = - 1A 60 MHz Cob Output Capacitance VCB = - 10V, f = 1MHz 170 pF tON Turn ON Time 0.1 µs tSTG Storage Time 1 µs tF Fall Time VCC = - 30V, IC = - 3A IB1 = -I B2 = - 0.15A RL = 10Ω 0.1 µs hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1244 Typical Characteristics 1000 -8 -6 IB = -70mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = -2V IB = -80mA IB = -60mA IB = -50mA -4 IB = -40mA IB = -30mA IB = -20mA -2 100 10 IB = -10mA IB = 0mA 1 -0.01 -0 -0 -2 -4 -6 -8 -0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -5 VCE = -1V IC = 20 IB IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 V BE(sat) -1 V CE(sat) -0.1 -0.01 -0.01 -0.1 -1 -4 -3 -2 -1 -0 -0.0 -10 -0.4 -0.8 -1.2 -1.6 -2.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 32 -10 IC MAX. (Pulse) PC[W], POWER DISSIPATION D C -1 -0.1 VCEOMAX. IC[A], COLLECTOR CURRENT 28 s 1m m s 10 IC MAX. (DC) -0.01 -0.1 -1 -10 24 20 16 12 8 4 0 0 25 50 75 100 125 150 175 -100 o VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSA1244 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E
KSA1244YTU 价格&库存

很抱歉,暂时无法提供与“KSA1244YTU”相匹配的价格&库存,您可以联系我们找货

免费人工找货