KSD1221OTU

KSD1221 KSD1221 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB906 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 60 V 7 IC Collector Current 3 V A IB Base Current 0.5 A PC Collector Dissipation (TC=25°C) 20 W PC Collector Dissipation (Ta=25°C) 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 50mA, IB = 0 Min. 60 Typ. Max. ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 100 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 60 20 Units V 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V VBE(on) Base-Emitter ON Voltage IC = 5A, IC = 0.5A 0.7 1 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz Cob Output Capacitance VCB = 10V, f = 1MHz 70 pF tON Turn ON Time 0.8 µs tSTG Storage Time tF Fall Time VCC = 30V, IC = 1A IB1 = -IB2 = 0.2A RL = 30Ω 1.5 µs 0.8 µs hFE Classification Classification O Y G hFE1 60 ~ 120 100 ~ 200 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1221 Typical Characteristics 4 1000 IB=80mA IB = 70mA IB = 60mA IB = 50mA 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 5V IB =90mA IB = 40mA IB = 30mA 2 IB = 20mA IB = 10mA 1 100 10 IB = 0 0 0 2 4 6 1 0.01 8 0.1 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 4 V CE=5V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE IC = 10IB 1 0.1 0.01 0.01 0.1 1 3 2 1 0 0.0 10 0.4 0.8 1.2 1.6 VBE[V], BASE EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 32 IC MAX. (PULSE) PC[W], POWER DISSIPATION 10ms 100ms DC 1 VCEO MAX. IC[A], COLLECTOR CURRENT 28 1ms IC MAX. (DC) 10 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 20 16 12 8 4 0.1 1 24 100 0 0 25 50 75 100 125 150 175 200 o T C[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD1221 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E