KSD1616AYTA

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSD1616A NPN Epitaxial Silicon Transistor Features • Audio Frequency Power Amplifier and Medium Speed Switching • Complement to KSB1116 / KSB1116A TO-92 1 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSD1616AYTA D1616A TO-92 3L Ammo KSD1616AGBU D1616A TO-92 3L Bulk KSD1616AGTA D1616A TO-92 3L Ammo KSD1616ALTA D1616A TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage Parameter 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 1 A 2 A (1) ICP Collector Current (Pulse) TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Note: 1. Pulse width ≤ 10 ms, duty cycle < 50% © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 www.fairchildsemi.com KSD1616A — NPN Epitaxial Silicon Transistor February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Total Device Dissipation Derate Above 25°C Thermal Resistance, Junction-to-Ambient Unit 0.75 W 6 mW/°C 160 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 120 V BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0 60 V BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 hFE1 DC Current Gain VCE = 2 V, IC = 100 mA 135 hFE2 DC Current Gain VCE = 2 V, IC = 1 A 81 VCE = 2 V, IC = 50 mA 600 Voltage(3) 100 nA 100 nA 400 VBE(on) Base-Emitter On 640 700 mV VCE(sat) Collector-Emitter Saturation Voltage(3) IC = 1 A, IB = 50 mA 0.15 0.30 V VBE(sat) Voltage(3) IC = 1 A, IB = 50 mA 0.9 1.2 V Output Capacitance VCE = 10 V, IE = 0, f = 1 MHz 19 pF Current Gain Bandwidth Product VCE = 2 V, IC = 100 mA 160 MHz tON Turn-On Time tSTG Storage Time VCC = 10 V, IC = 100 mA, IB1 = -IB2 = 10 mA, VBE(off) = -2 V ~ -3 V Cob fT tF Base-Emitter Saturation Fall Time 100 0.07 μs 0.95 μs 0.07 μs Note: 3. Pulse test: pulse width < 350 μs, duty cycle ≤ 2% pulsed. hFE Classification Classification Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600 © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 www.fairchildsemi.com 2 KSD1616A — NPN Epitaxial Silicon Transistor Thermal Characteristics(2) 100 IB = 250μA IB = 200μA 60 IB = 150μA 40 IB = 100μA 20 IB = 3.5mA IB = 3.0mA IB IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 80 = IB = 5.0mA IB = 4.5mA 4. 0m A 1.0 IB = 300μA 0.8 IB = 2.5mA IB = 2.0mA 0.6 IB = 1.5mA 0.4 IB = 1.0mA IB = 0.5mA 0.2 IB = 50μA 0 0 2 4 6 8 0.0 0.0 10 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.6 0.8 10 10 IC = 20 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 0.01 IC[mA], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10 1000 VCC = -10V IC = 10IB1 = -10IB2 tON, tSTG, tF [μs], TIME IE=0 f = 1MHz Cob[pF], CAPACITANCE 1.0 Figure 2. Static Characteristic 1000 0.1 0.4 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.01 0.2 100 10 1 tSTG tF 0.1 tON 0.01 -0.001 1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Collector Output Capacitance © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 -0.01 Figure 6. Switching Time www.fairchildsemi.com 3 KSD1616A — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 10 VCE = 2V 10 10 m s 1 20 0m s PW =1 m s DC 0.1 D1616A 100 D1616 IC[A], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 0.01 1 0.01 0.1 1 1 10 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area 0.8 PC[W], POWER DISSIPATION 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 200 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 www.fairchildsemi.com 4 KSD1616A — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) KSD1616A — NPN Epitaxial Silicon Transistor Physical Dimensions D Figure 10. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 www.fairchildsemi.com 5 KSD1616A — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 11. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2002 Fairchild Semiconductor Corporation KSD1616A Rev. 1.6 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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