LB11967V-TLM-H

LB11967V Single-Phase Full-Wave Pre-Driver for Variable Speed Fan Motor Overview The LB11967V is a single-phase bipolar variable speed fan motor pre-driver that works with an external PWM signal. A highly efficient, quiet and low power consumption motor driver circuit, with a large variable speed, can be implemented by adding a small number of external components. This device is optimal for driving large scale fan motors (with large air volume and large current) such as those used in servers and consumer products. Functions • Pre-driver for single-phase full-wave drive PNP-EMOS is used as an external power Transistor, enabling high-efficiency low-consumption drive by means of the low-saturation output and single-phase full-wave drive. (PMOS-NMOS also applicable) • External PWM input enabling variable speed control Separately-excited upper direct PWM (f = 25kHz) control method, enabling highly silent speed control • Compatible with 12V, 24V, and 48V power supplies • Current limiter circuit incorporated Chopper type current limit at start • Reactive current cut circuit incorporated Reactive current before phase change is cut to enable silent and low-consumption drive. • Minimum speed setting pin Minimum speed can be set with external resistor. The start assistance circuit enables start at extremely low speed. • Constant-voltage output pin for Hall bias • Lock protection and automatic reset functions incorporated • (Rotation speed detection), RD (Lock detection) output www.onsemi.com SSOP20 (225mil) XXXXXXXXXX YMDDD XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data ORDERING INFORMATION Applications • Computing & Peripherals • Consumer • Server © Semiconductor Components Industries, LLC, 2016 November 2016- Rev. 1 See detailed ordering and shipping information on page 10 of this data sheet. 1 Publication Order Number: LB11967V/D LB11967V Specifications Maximum Ratings at Ta = 25C Parameter (Note1) Symbol Conditions Ratings Unit VCC maximum supply voltage VCC max 18 V OUT pin maximum output current IOUT max 50 mA OUT pin output withstand voltage VOUT max 18 V mA HB maximum output current VTH input pin withstand voltage RD/FG output pin output IHB max 10 VVTH max 8 V VRD/VFG max 18 V withstand voltage RD/FG output current Allowable power dissipation IRD/IFG max Pd max Mounted on a specified board (Note2) 10 mA 800 mW Operating temperature range Topr -30 to +95 C Storage temperature range Tstg -55 to +150 C 1. Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified board: 114.3mm × 76.1mm × 1.6mm, glass epoxy board. Recommended Operating Conditions at Ta = 25C Parameter Symbol VCC supply voltage VCC VTH input level voltage range VTH Hall input common phase input VICM (Note3) Conditions Ratings Full speed mode Unit 6 to 16 V 0 to 7 V 0.2 to 3 V voltage range 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics at Ta = 25C, VCC = 12V, unless otherwise specified. (Note4) Ratings Parameter Symbol Conditions Unit min Circuit current ICC1 ICC2 6VREG voltage HB voltage VOVER voltage 6VREG VHB VVOVER During drive During lock protection typ 6 max 10 14 mA mA 6 10 14 I6VREG = 5mA 5.80 6.0 6.15 V IHB = 5mA 1.05 1.22 1.35 V IVOVER = 1mA 12.0 12.8 13.6 V CPWM-H level voltage VCRH 4.35 4.55 4.75 V CPWM-L level voltage VCRL 1.45 1.65 1.85 V CPWM oscillation frequency FPWM 18 25 32 CT pin H level voltage VCTH 3.4 3.6 3.8 V CT pin L level voltage VCTL 1.4 1.6 1.8 V ICT pin charge current ICT1 VCT = 1.2V 1.6 2.0 2.5 A ICT pin discharge current ICT2 VCT = 4.0V 0.16 0.20 0.28 A ICT charge/discharge current ratio RCT ICT1/ICT2 8 10 12 deg OUT-N output voltage VON IO = 20mA 4 10 15 20 OUT-P sink current IOP Hall input sensitivity VHN C = 100pF Zero peak value kHz V mA 10 20 mV 0.15 0.3 V (including offset and hysteresis) RD/FG output pin L voltage VRD/VFG IRD/IFG = 5mA IRDL/IFGL VRD/VFG = 16V 30 A 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RD/FG output pin leak current www.onsemi.com 2 LB11967V Package Dimensions unit : mm SSOP20 (225mil) CASE 565AN ISSUE A SOLDERING FOOTPRINT* 5.80 1.0 (Unit: mm) 0.32 0.65 NOTE: The measurements are not to guarantee but for reference only. www.onsemi.com 3 LB11967V Pd max -- Ta Allowable power dissipation, Pd max -- mW 1000 Mounted on specified board: 114.3×76.1×1.6mm3 glass epoxy board 800 600 400 352 200 0 --30 --10 10 30 50 70 90 Ambient temprature, Ta -- °C 110 PCA00204 Pin Assignment 20 OUT1P OUT2N 2 19 OUT1N VCC 3 18 VOVER VLIM 4 17 SGND LB11967V OUT2P 1 SENSE 5 RMI 6 VTH 7 16 6VREG 15 ROFF 14 CT CPWM 8 13 IN+ FG 9 12 HB RD 10 11 INTop view Truth Table During full-speed rotation IN- IN+ H L L H CT OUT1P OUT1N OUT2P OUT2N FG L L OFF H L OFF H L L OFF L H L L H VTH CPWM L H H Mode OUT1  2 drive L OUT2  1 drive OFF L OFF H L OFF H OFF L OFF IN+ OUT1P OUT1N OUT2P OUT2N Mode H IN- RD OFF Lock protection H L L L OFF H OUT1  2 drive L H OFF H L L OUT2  1 drive H L OFF L OFF H During rotation L H OFF H OFF L Regeneration in lower Tr L www.onsemi.com 4 VCC www.onsemi.com 5 HALL IN- IN+ HB ROFF 6VREG 0.47 to 1μF CT Hysteresis AMP Hall-Bias 6VREG RMI Discharge pulse VTH Controller CPWM Oscillation VLIM SENSE Discharge circuit SGND OUT2P OUT2N OUT1P OUT1N RD FG LB11967V Block Diagram LB11967V Sample Application Circuit 1 (12V) CB=~0.022μF RB=10kΩ Vz=18V ROUT=100Ω SOP8901 RF RFG,RRD=10k~100kΩ VCC RD VOVER FG HB H 6VREG SENSE IN- VLIM IN+ 6VREG RMI ROFF OUT1P VTH PWM-IN OUT1N OUT2P CPWM CP=100pF 25kHz CT=0.47μF OUT2N CT SGND www.onsemi.com 6 R=0~5kΩ LB11967V Sample Application Circuit 2 (24V, 48V) RF VCC RD VOVER FG H 6VREG HB SENSE IN- VLIM IN+ 6VREG RMI ROFF OUT1P VTH PWM-IN OUT1N OUT2P CPWM CP=100pF OUT2N CT SGND www.onsemi.com 7 LB11967V *1. SGND is connected to the control circuit power supply system. *2. For the CM capacitor that is a power stabilization capacitor for PWM drive and for absorption of kick-back, the capacitance uses 0.1F or more. In this IC, the lower Transistor performs current regeneration by means of switching of upper Transistor. Connect CM between VCC and GND with the thick pattern and along the shortest route. *3. Be sure to use the zener diode if kick-back causes excessive increase of the supply voltage because such increase damages IC. *4. Wiring need to be short to prevent carrying of the noise. If the noise is carried, insert a capacitor between IN+ and IN-. The Hall input circuit is a comparator having a hysteresis of 20mV. It is recommended that the Hall input level is more than three times (60mVp-p) this hysteresis. *5. With CP = 100pF, oscillation occurs at f = 25kHz and provides the basic frequency of PWM. *6. This is the open collector output, which outputs “L” during rotation and “H” at stop. This output is left open when not used. *7. This is the open collector output, which can detect the rotation speed using the FG output according to the phase shift. This output is left open when not used. *8. This is a Hall element bias pin, that is, the constant-voltage output pin. *9. This is the minimum speed setting pin, which is pulled up with 6VREG when not used. When IC power may possibly be turned OFF first when the pin is used, be sure to insert a current limiting resistor to prevent inflow of the large current. (The same applies to the VTH pin.) *10. This pin sets the soft switching time to cut the reactive current before phase change and is connected to 6VREG when not used. *11. This pin activates the current limiter when the SENSE pin voltage is higher than the VLIM pin voltage and is connected to 6VREG when not used. *12. This is connected to GND when not used. *13. This is a pin for constant-voltage bias and should be used for application of 24V and 48V. (Refer to the sample application circuit.) Be sure to use the current limiting resistor. This is left open when not used. www.onsemi.com 8 LB11967V Control Timing Chart VTH voltage f=25kHz (CP=100pF) ON-Duty-large 4.55V RMI voltage CPWM 1.65V ON-Duty-small PMW-IN disconnected 0V Rotation set to minimum speed (Stop mode) PWM control variable speed Low speed High speed Full speed 12V VCC 0V FG (1) Minimum speed setting (stop) mode PWM-IN input is filtered to generate the VTH voltage. At low speed, the fan rotates with the minimum speed set with RMI pin during low speed. If the minimum speed is not set (RMI = 6VREG), the fan stops. (2) LowHigh speed mode PWM control is made through comparison of oscillation and VTH voltages with CPWM changing between 1.6V4.6V. When the VTH voltage is lower, the IC switches to drive mode. When the VTH voltage is higher, the p-channel FET is turned off and coil current is regenerated through the low-side FET. Therefore, as the VTH voltage lowers, the output ON-DUTY increases, increasing the coil current and raising the motor speed. The rotation speed is fed back by the FG output. (3) Full speed mode The full-speed mode becomes effective with the VTH voltage of 1.65V or less. (VTH must be equal to GND when the speed control is not to be made.) (4) PWM-IN input disconnection mode When the PWM-IN input pin is disconnected, VTH becomes 1.65V or les and the output enables full drive at 100%. The fan runs at full speed. (Refer to the sample application circuit.) www.onsemi.com 9 LB11967V ORDERING INFORMATION Device LB11967V-MPB-H Package Wire Bond Shipping(Qty/Packing) SSOP20(225mil) Au-wire 70 / Fan-fold Au-wire 2000 / Tape & Reel Cu-wire 2000 / Tape & Reel (Pb-Free / Halogen Free) LB11967V-TLM-H SSOP20(225mil) (Pb-Free / Halogen Free) LB11967V-W-AH SSOP20(225mil) (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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