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LM317MSTT3G

LM317MSTT3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO261-4

  • 描述:

    ADJUSTABLE POSITIVE STANDARD REG

  • 数据手册
  • 价格&库存
LM317MSTT3G 数据手册
LM317M, NCV317MA, NCV317M Voltage Regulator Adjustable Output, Positive 500 mA The LM317M is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 500 mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs internal current limiting, thermal shutdown and safe area compensation, making it essentially blow−out proof. The LM317M serves a wide variety of applications including local, on−card regulation. This device also makes an especially simple adjustable switching regulator, a programmable output regulator, or by connecting a fixed resistor between the adjustment and output, the LM317M can be used as a precision current regulator. www.onsemi.com Heatsink surface connected to Pin 2 TO−220AB T SUFFIX CASE 221AB 1 Features • • • • • • • • • Output Current in Excess of 500 mA Output Adjustable between 1.2 V and 37 V Internal Thermal Overload Protection Internal Short Circuit Current Limiting Output Transistor Safe−Area Compensation Floating Operation for High Voltage Applications Eliminates Stocking Many Fixed Voltages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices Vin Vin Vout 2 SOT−223 ST SUFFIX CASE 318E 1 3 2 3 4 DPAK DT SUFFIX CASE 369C 1 2 3 Heatsink Surface (shown as terminal 4 in case outline drawing) is connected to Pin 2. Vout LM317M PIN ASSIGNMENT R1 240 * Cin 0.1mF IAdj Adjust ** +C O 1.0mF 1 Adjust 2 Vout 3 Vin R2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. * = Cin is required if regulator is located an appreciable distance from power supply filter. ** = CO is not needed for stability, however, it does improve transient response. R Vout + 1.25Vǒ1 ) 2Ǔ ) IAdjR2 R1 DEVICE MARKING INFORMATION See general marking information in the device marking section on page 11 of this data sheet. Since IAdj is controlled to less than 100 mA, the error associated with this term is negligible in most applications. Figure 1. Simplified Application © Semiconductor Components Industries, LLC, 2014 October, 2019 − Rev. 26 1 Publication Order Number: LM317M/D LM317M, NCV317MA, NCV317M MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.) Rating Input−Output Voltage Differential Power Dissipation (Package Limitation) (Note 1) Plastic Package, T Suffix, Case 221A TA = 25°C Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Plastic Package, DT Suffix, Case 369C TA = 25°C Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Plastic Package, ST Suffix, Case 318E TA = 25°C Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Maximum Junction Temperature Storage Temperature Range Symbol Value Unit VI−VO 40 Vdc PD qJA qJC Internally Limited 70 5.0 °C/W °C/W PD qJA qJC Internally Limited 92 5.0 °C/W °C/W PD qJA qJC Internally Limited 245 15 °C/W °C/W TJMAX +150 °C Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Figure 25 provides thermal resistance versus PC board pad size. ELECTRICAL CHARACTERISTICS (VI − VO = 5.0 V; IO = 0.1 A, TJ = Tlow to Thigh (Note 2), unless otherwise noted.) LM317M/LM317MB/NCV317MB Figure Symbol Min Typ Max Unit Line Regulation (Note 3) (TA = 25°C, 3.0 V ≤ VI − VO ≤ 40 V) 3 Regline − 0.01 0.04 %/V Load Regulation (Note 3) TA = 25°C, 10 mA ≤ IO ≤ 0.5 A VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload − − 5.0 0.1 25 0.5 mV % VO Adjustment Pin Current 5 IAdj − 50 100 mA Adjustment Pin Current Change 2.5 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax 3, 4 DIAdj − 0.2 5.0 mA Reference Voltage 3.0 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax 5 Vref 1.20 1.25 1.30 V Line Regulation 3.0 V ≤ VI−VO ≤ 40 V (Note 3) 3 Regline − 0.02 0.07 %/V Load Regulation 10 mA ≤ IO ≤ 0.5 A (Note 3) VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload − − 20 0.3 70 1.5 mV % VO Temperature Stability (Tlow ≤ TJ ≤ Thigh) 5 TS − 0.7 − % VO Minimum Load Current to Maintain Regulation (VI − VO = 40 V) 5 ILmin − 3.5 10 mA Maximum Output Current VI − VO ≤ 15 V, PD ≤ Pmax VI − VO = 40 V, PD ≤ Pmax, TA = 25°C 5 Imax 0.5 0.15 0.9 0.25 − − RMS Noise, % of VO (TA = 25°C, 10 Hz ≤ f ≤ 10 kHz) − N − 0.003 − Ripple Rejection, VO = 10 V, f = 120 Hz (Note 4) Without CAdj CAdj = 10 mF 6 RR − 66 65 80 − − Thermal Shutdown (Note 5) − − − 180 − °C Long−Term Stability, TJ = Thigh (Note 6) TA= 25°C for End−point Measurements 5 S − 0.3 1.0 %/1.0 kHrs. Characteristics A % VO dB 2. Tlow to Thigh = 0° to +125°C for LM317M Tlow to Thigh = −40° to +125°C for LM317MB, NCV317MB. 3. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty cycle is used. 4. CAdj, when used, is connected between the adjustment pin and ground. 5. Thermal characteristics are not subject to production test. 6. Since Long−Term Stability cannot be measured on each device before shipment, this specification is an engineering estimate of average stability from lot−to−lot. www.onsemi.com 2 LM317M, NCV317MA, NCV317M ELECTRICAL CHARACTERISTICS (VI − VO = 5.0 V; IO = 0.1 A, TJ = Tlow to Thigh (Note 7), unless otherwise noted.) Characteristics Figure Symbol Line Regulation (Note 8) (TA = 25°C, 3.0 V ≤ VI − VO ≤ 40 V) 3 Regline Load Regulation (Note 8) TA = 25°C, 10 mA ≤ IO ≤ 0.5 A VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload Adjustment Pin Current 5 Adjustment Pin Current Change 2.5 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax LM317MA/LM317MAB/NCV317MAB Min Typ Max Unit − 0.01 0.04 %/V − − 5.0 0.1 25 0.5 mV % VO IAdj − 50 100 mA 3, 4 DIAdj − 0.2 5.0 mA Reference Voltage 3.0 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax 5 Vref 1.225 1.250 1.275 V Line Regulation (Note 8) 3.0 V ≤ VI−VO ≤ 40 V 3 Regline − 0.02 0.07 %/V Load Regulation (Note 8) 10 mA ≤ IO ≤ 0.5 A VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload − − 20 0.3 70 1.5 mV % VO Temperature Stability (Tlow ≤ TJ ≤ Thigh) 5 TS − 0.7 − % VO Minimum Load Current to Maintain Regulation (VI − VO = 40 V) 5 ILmin − 3.5 10 mA Maximum Output Current VI − VO ≤ 15 V, PD ≤ Pmax VI − VO = 40 V, PD ≤ Pmax, TA = 25°C 5 Imax 0.5 0.15 0.9 0.25 − − RMS Noise, % of VO (TA = 25°C, 10 Hz ≤ f ≤ 10 kHz) − N − − − Ripple Rejection, VO = 10 V, f = 120 Hz (Note 9) Without CAdj CAdj = 10 mF 6 RR − 66 65 80 − − Thermal Shutdown (Note 10) − − − 180 − °C Long−Term Stability, TJ = Thigh (Note 11) TA= 25°C for End−point Measurements 5 S − 0.3 1.0 %/1.0 kHrs. A % VO dB 7. Tlow to Thigh = 0° to +125°C for LM317MA Tlow to Thigh = −40° to +125°C for LM317MAB, NCV317MAB. 8. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty cycle is used. 9. CAdj, when used, is connected between the adjustment pin and ground. 10. Thermal characteristics are not subject to production test. 11. Since Long−Term Stability cannot be measured on each device before shipment, this specification is an engineering estimate of average stability from lot−to−lot. www.onsemi.com 3 LM317M, NCV317MA, NCV317M Vin 300 300 300 3.0k 300 70 6.8V 6.8V 350 18k 8.67k 500 130 400 5.1k 200k 6.3V 180 180 2.0k 6.0k 60 10 pF 10 pF 1.25 Vout 2.4k 12.8k 50 Adjust Figure 2. Representative Schematic Diagram VCC VOH - VOL VOL Line Regulation (%/V) = * VIH VIL VOH VOL Vout Vin x 100 LM317M Adjust Cin *Pulse Testing Required: 1% Duty Cycle is suggested. 0.1mF R1 240 1% RL + CO IAdj 1.0mF R2 1% Figure 3. Line Regulation and DIAdj/Line Test Circuit www.onsemi.com 4 LM317M, NCV317MA, NCV317M Load Regulation (mV) = VO (min Load) -VO (max Load) VO (min Load) - VO (max Load) Load Regulation (% VO) = VO (min Load) Vin Vin Vout LM317M Adjust X 100 VO (min Load) VO (max Load) IL R1 RL (max Load) 240 1% RL (min Load) * + Cin 0.1mF CO IAdj 1.0mF R2 1% *Pulse Testing Required: 1% Duty Cycle is suggested. Figure 4. Load Regulation and DIAdj/Load Test Circuit Vin Vout LM317M IL Adjust 240 1% R1 VI IAdj Cin Vref RL + CO 0.1mF 1mF VO ISET R2 1% To Calculate R2: Vout = ISET R2 + 1.250 V Assume ISET = 5.25 mA *Pulse Testing Required: 1% Duty Cycle is suggested. Figure 5. Standard Test Circuit 24V Vout Vin 14V f = 120 Hz Vout = 10 V LM317M Adjust Cin 240 1% R1 D1 * 1N4002 CO 0.1mF R2 1.65K 1% ** CAdj RL + 1.0mF + 10mF *D1 Discharges CAdj if Output is Shorted to Ground. **CAdj provides an AC ground to the adjust pin. Figure 6. Ripple Rejection Test Circuit www.onsemi.com 5 VO LM317M, NCV317MA, NCV317M 0.4 Vin = 45 V Vout = 5.0 V IL = 5.0 mA to 40 mA 0.2 RR, RIPPLE REJECTION (dB) Δ V out , OUTPUT VOLTAGE CHANGE (%) 90 0 -0.2 Vin = 10 V Vout = 5.0 V IL = 5.0 mA to 100 mA -0.4 -0.6 -0.8 80 Without CAdj = 10 mF 70 50 -1.0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) -50 150 -25 Figure 7. Load Regulation V in -Vout , INPUT-OUTPUT VOLTAGE DIFFERENTIAL (V) Iout , OUTPUT CURRENT (A) 0.80 0.60 TJ = 25°C 0.40 TJ = 125°C 150 2.5 IL = 500 mA 2.0 IL = 100 mA 1.5 1.0 0.5 0 0 10 20 30 40 Vin-Vout, INPUT-OUTPUT VOLTAGE DIFFERENTIAL (V) 50 -50 Figure 9. Current Limit 5.0 100 4.5 90 4.0 3.5 3.0 TJ = 25°C 2.5 TJ = 125°C 2.0 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 Figure 10. Dropout Voltage RR, RIPPLE REJECTION (dB) IB , QUIESCENT CURRENT (mA) 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Ripple Rejection 1.0 0.20 Without CAdj IL = 100 mA f = 120 Hz Vout = 10 V Vin = 14 V to 24 V 60 1.5 1.0 IL = 40 mA Vin = 5.0 V ± 1.0 VPP Vout = 1.25 V 80 70 60 50 40 30 20 10 0.5 0 10 20 30 40 Vin-Vout, INPUT-OUTPUT VOLTAGE DIFFERENTIAL (Vdc) 10 Figure 11. Minimum Operating Current 100 1.0 k 10 k 100 k 1.0 M f, FREQUENCY (Hz) Figure 12. Ripple Rejection versus Frequency www.onsemi.com 6 LM317M, NCV317MA, NCV317M 1.250 1.240 Vin = 4.2 V Vout = Vref IL = 5.0 mA 1.230 80 IAdj, ADJUSTMENT PIN CURRENT ( μA) Vref, REFERENCE VOLTAGE (V) 1.260 Vin = 6.25 V Vout = Vref  IL = 10 mA IL = 100 mA 70 65 60 55 50 45 40 35 1.220 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) -50 150 NOISE VOLTAGE ( μV) Δ Vout , OUTPUT VOLTAGE CHANGE (%) 75 100 125 150 Bandwidth 100 Hz to 10 kHz 0 -0.2 -0.4 -0.6 8.0 6.0 -0.8 4.0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 -50 Δ Vout , OUTPUT VOLTAGE DEVIATION (V) CL = 1.0 mF 3.0 I L , LOAD CURRENT (A) 1.0 25 50 75 100 1.5 1.0 Vout = 10 V IL = 50 mA TJ = 25°C -1.5 CL = 1.0 mF; CAdj = 10 mF Vin = 15 V Vout = 10 V INL = 50 mA TJ = 25°C CL = 0 1.0 Vin 0 10 CL = 0.3 mF; CAdj = 10 mF -3.0 0.5 20 t, TIME (ms) 150 0 -2.0 -0.5 -1.0 125 2.0 -1.0 0 0 0 Figure 16. Output Noise 1.5 0.5 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Line Regulation Δ Vout , OUTPUT VOLTAGE DEVIATION (V) 50 10 -1.0 Δ Vin , INPUT VOLTAGE CHANGE (V) 25 Figure 14. Adjustment Pin Current Vin = 4.25 V to 41.25 V Vout = Vref IL = 5.0 mA 0.2 0 TJ, JUNCTION TEMPERATURE (°C) Figure 13. Temperature Stability 0.4 -25 30 40 1.0 IL 0.5 0 0 10 20 t, TIME (ms) 30 Figure 18. Load Transient Response Figure 17. Line Transient Response www.onsemi.com 7 40 LM317M, NCV317MA, NCV317M APPLICATIONS INFORMATION Basic Circuit Operation External Capacitors The LM317M is a three−terminal floating regulator. In operation, the LM317M develops and maintains a nominal 1.25 V reference (Vref) between its output and adjustment terminals. This reference voltage is converted to a programming current (IPROG) by R1 (see Figure 19), and this constant current flows through R2 to ground. The regulated output voltage is given by: A 0.1 mF disc or 1.0 mF tantalum input bypass capacitor (Cin) is recommended to reduce the sensitivity to input line impedance. The adjustment terminal may be bypassed to ground to improve ripple rejection. This capacitor (CAdj) prevents ripple from being amplified as the output voltage is increased. A 10 mF capacitor should improve ripple rejection about 15 dB at 120 Hz in a 10 V application. Although the LM317M is stable with no output capacitance, like any feedback circuit, certain values of external capacitance can cause excessive ringing. An output capacitance (CO) in the form of a 1.0 mF tantalum or 25 mF aluminum electrolytic capacitor on the output swamps this effect and insures stability. ǒ Ǔ R Vout + Vref 1 ) 2 ) IAdj R2 R1 Since the current from the terminal (IAdj) represents an error term in the equation, the LM317M was designed to control IAdj to less than 100 mA and keep it constant. To do this, all quiescent operating current is returned to the output terminal. This imposes the requirement for a minimum load current. If the load current is less than this minimum, the output voltage will rise. Since the LM317M is a floating regulator, it is only the voltage differential across the circuit which is important to performance, and operation at high voltages with respect to ground is possible. Protection Diodes When external capacitors are used with any IC regulator it is sometimes necessary to add protection diodes to prevent the capacitors from discharging through low current points into the regulator. Figure 20 shows the LM317M with the recommended protection diodes for output voltages in excess of 25 V or high capacitance values (CO > 25 mF, CAdj > 5.0 mF). Diode D1 prevents CO from discharging thru the IC during an input short circuit. Diode D2 protects against capacitor CAdj discharging through the IC during an output short circuit. The combination of diodes D1 and D2 prevents CAdj from discharging through the IC during an input short circuit. Vout Vin LM317M + R1 Vref Adjust IPROG Vout IAdj D1 R2 1N4002 Vin Vref = 1.25 V Typical Vout Vout LM317M + Figure 19. Basic Circuit Configuration Cin R1 D2 Adjust Load Regulation The LM317M is capable of providing extremely good load regulation, but a few precautions are needed to obtain maximum performance. For best performance, the programming resistor (R1) should be connected as close to the regulator as possible to minimize line drops which effectively appear in series with the reference, thereby degrading regulation. The ground end of R2 can be returned near the load ground to provide remote ground sensing and improve load regulation. 1N4002 R2 CAdj Figure 20. Voltage Regulator with Protection Diodes www.onsemi.com 8 CO LM317M, NCV317MA, NCV317M +25V Vout 1.25k Vin Adjust D1 D1 1N914 R2 500 * To provide current limiting of IO to the system ground, the source of the current limiting diode must be tied to  a negative voltage below -7.25 V. 1N4002 Vin Vout LM317M + 1.0mF 120 Adjust 1N5314 MPS2222 TTL Control 720 1.0k VSS* Vref IOmax + IDSS Minimum Vout = 1.25 V VO < POV + 1.25 V + VSS ILmin - IP < IO < 500 mA - IP As shown O < IO < 495 mA D1 protects the device during an input short circuit. Figure 21. Adjustable Current Limiter Vin Vout Vin D2 1N914 Vref R2 ≥ IDSS R1 = IO VO R1 LM317M Figure 22. 5 V Electronic Shutdown Regulator Vout Vin Vout LM317M 240 R1 Iout R2 LM317M Vout 1N4001 Adjust IAdj 50k Adjust R2 MPS2907 + Ioutmax = 10mF Vref R1 + R2 1.25 V + IAdj ^ R + R 1 2 5.0 mA < Iout < 500 mA R θ JA, THERMAL RESISTANCE, JUNCTION-TO-AIR (° C/W) Figure 23. Slow Turn−On Regulator Figure 24. Current Regulator 100 2.4 90 80 Minimum Size Pad 70 280 2.50 PD(max) for TA = 50°C Free Air Mounted Vertically 60 2.0 240 2.0 oz. Copper L 1.6 200 L 1.2 160 0.8 120 0.4 80 ÎÎÎ ÎÎÎ ÎÎÎ 50 PD(max) for TA = 50°C Free Air Mounted Vertically 1.25 0 10 15 L 0.63 0.42 RqJA 40 5.0 0.83 0.50 RqJA 0 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ Minimum Size Pad 2.0 oz. Copper L 20 25 40 30 0 5.0 10 15 20 25 30 0.35 L, LENGTH OF COPPER (mm) L, LENGTH OF COPPER (mm) Figure 25. DPAK Thermal Resistance and Maximum Power Dissipation versus PCB Copper Length Figure 26. SOT−223 Thermal Resistance and Maximum Power Dissipation versus PCB Copper Length www.onsemi.com 9 LM317M, NCV317MA, NCV317M ORDERING INFORMATION Output Voltage Operating Temperature Range Package Shipping† LM317MABDTG DPAK (Pb−Free) 75 Units / Rail LM317MABDTRKG DPAK (Pb−Free) 2500 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel TO−220 (Pb−Free) 50 Units / Rail DPAK (Pb−Free) 2500 / Tape & Reel DPAK (Pb−Free) 75 Units / Rail DPAK (Pb−Free) 2500 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel TO−220 (Pb−Free) 50 Units / Rail LM317MDTG DPAK (Pb−Free) 75 Units / Rail LM317MDTRKG DPAK (Pb−Free) 2500 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel TO−220 (Pb−Free) 50 Units / Rail Device Tolerance NCV317MABDTRKG* NCV317MABSTT3G* TJ = −40°C to 125°C 2% LM317MABTG LM317MADTRKG TJ = 0°C to 125°C LM317MBDTG NCV317MBDTG* LM317MBDTRKG NCV317MBDTRKG* TJ = −40°C to 125°C LM317MBSTT3G NCV317MBSTT3G* LM317MBTG NCV317MBTG* LM317MSTT3G 4% TJ = 0°C to 125°C LM317MTG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *NCV devices: Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 10 LM317M, NCV317MA, NCV317M MARKING DIAGRAMS DPAK DT SUFFIX CASE 369C 317ABG ALYWW 317MAG ALYWW 317MBG ALYWW TO−220 T SUFFIX CASE 221A LM 317MABT AWLYWWG LM 317MBT AWLYWWG 317MG ALYWW SOT−223 ST SUFFIX CASE 318E AYW 317MA G G LM 317MT AWLYWWG A = Assembly Location L, WL = Wafer Lot Y = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 11 AYW 317MB G G AYW 317M G G MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, SINGLE GAUGE CASE 221AB−01 ISSUE A −T− B F T SCALE 1:1 SEATING PLANE C S DATE 16 NOV 2010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4. PRODUCT SHIPPED PRIOR TO 2008 HAD DIMENSIONS S = 0.045 - 0.055 INCHES (1.143 - 1.397 MM) 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.024 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 0.61 5.97 6.47 0.00 1.27 1.15 ----2.04 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE DOCUMENT NUMBER: DESCRIPTION: 98AON23085D TO−220, SINGLE GAUGE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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