LM385BD-2.5R2G

LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower two−terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 mA to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on−chip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. The LM285/LM385 series are packaged in a low cost TO−226 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a −40°C to +85°C temperature range while the LM385 is rated from 0°C to +70°C. The LM385 is also available in a surface mount plastic package in voltages of 1.235 V and 2.500 V. Features http://onsemi.com MARKING DIAGRAMS 8 8 1 SOIC−8 D SUFFIX CASE 751 1 y85−z ALYW G • • • • • • Operating Current from 10 mA to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades Low Temperature Coefficient 1.0 W Dynamic Impedance Surface Mount Package Available Pb−Free Packages are Available Cathode N.C. Cathode Anode TO−92 (TO−226) Z SUFFIX CASE 29 LMy85 Z−xxx ALYWW G G xxx = 1.2 or 2.5 y = 2 or 3 z = 1 or 2 A = Assembly Location L = Wafer Lot Y = Year W, WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 360 k Open for 1.235 V 10 k (Bottom View) 3 2 1 N.C. N.C. N.C. Anode 1 2 3 4 8 7 6 5 Cathode N.C. N.C. N.C. 600 k 8.45 k Standard Application 74.3 k Open for 2.5 V 600 k 425 k 1.5 V Battery + − 3.3 k 1.235 V LM385−1.2 600 k 500 W 100 k Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Figure 1. Representative Schematic Diagram © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 7 Publication Order Number: LM285/D LM285, LM385B MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Rating Reverse Current Forward Current Operating Ambient Temperature Range LM285 LM385 Operating Junction Temperature Storage Temperature Range Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) TJ Tstg ESD 4000 400 2000 Symbol IR IF TA −40 to +85 0 to +70 +150 −65 to + 150 °C °C V Value 30 10 Unit mA mA °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Reverse Breakdown Voltage (IRmin v IR v 20 mA) LM285−1.2/LM385B−1.2 TA = Tlow to Thigh (Note 1) LM385−1.2 TA = Tlow to Thigh (Note 1) Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 1) Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C Reverse Breakdown Voltage (IRmin v IR v 20 mA) LM285−2.5/LM385B−2.5 TA = Tlow to Thigh (Note 1) LM385−2.5 TA = Tlow to Thigh (Note 1) Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) 1. Tlow Thigh Tlow Thigh Symbol V(BR)R 1.223 1.200 − − IRmin − − DV(BR)R − − − − Z − DV(BR)/DT n − S − V(BR)R 2.462 2.415 − − IRmin − − 2.5 − − − 13 − 2.538 2.585 − − 20 30 2.462 2.436 2.425 2.400 − − 2.5 − 2.5 − 13 − 2.538 2.564 2.575 2.600 20 30 mA 20 − − 20 − V 60 − − 60 − ppm/kHR − 0.6 80 − − − − 0.6 80 − ppm/°C − mV − − − − 1.0 1.5 10 20 − − − − − − − − 1.0 1.5 20 25 W 8.0 − 10 20 − 8.0 − 15 20 mV 1.235 − − − 1.247 1.270 − − 1.223 1.210 1.205 1.192 1.235 − 1.235 − 1.247 1.260 1.260 1.273 mA Min Typ Max LM385−1.2/LM385B−1.2 Min Typ Max Unit V = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 http://onsemi.com 2 LM285, LM385B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C 2. Tlow Thigh Tlow Thigh Symbol DV(BR)R − − − − Z − DV(BR)/DT − n − S − 20 − − 20 − 120 − − 120 − ppm/kHR 80 − − 80 − mV 0.6 − − 0.6 − ppm/°C − − − − 1.0 1.5 10 20 − − − − − − − − 2.0 2.5 20 25 W Min Typ Max LM385−1.2/LM385B−1.2 Min Typ Max Unit mV = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 http://onsemi.com 3 LM285, LM385B TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2 100 IR, REVERSE CURRENT (μ A) ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) 10 8.0 6.0 4.0 2.0 0 −2.0 0.01 0.1 1.0 10 IR, REVERSE CURRENT (mA) 100 −40 °C TA = +85°C +25 °C 10 1.0 TA = +85°C +25 °C 0.1 0 0.2 −40 °C 1.2 1.4 0.4 0.6 0.8 1.0 V(BR), REVERSE VOLTAGE (V) Figure 2. Reverse Characteristics Figure 3. Reverse Characteristics 1.250 V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IF , FORWARD CURRENT (mA) 100 +25 °C TA = −40°C IR = 100 mA 1.240 1.230 +85 °C 1.220 1.210 −50 −25 0 25 50 75 TA , AMBIENT TEMPERATURE (°C) 100 125 Figure 4. Forward Characteristics Figure 5. Temperature Drift 875 OUTPUT (V) e n , NOISE (nV/ √Hz) 750 625 500 375 INPUT (V) 250 125 0 10 100 1.0 K f, FREQUENCY (Hz) 10 K 100 k 1.50 1.25 1.00 0.75 0.50 0.25 0 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) Input 100 k Output DUT 0.8 0.9 1.0 1.1 Figure 6. Noise Voltage Figure 7. Response Time http://onsemi.com 4 LM285, LM385B TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5 100 IR, REVERSE CURRENT (μ A) ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) 10 8.0 6.0 4.0 2.0 0 −2.0 0.01 0.1 1.0 10 IR, REVERSE CURRENT (mA) 100 TA = +85°C +25 °C −40 °C 10 TA = +85°C +25 °C 1.0 −40 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 V(BR), REVERSE VOLTAGE (V) 3.0 3.5 Figure 8. Reverse Characteristics Figure 9. Reverse Characteristics V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 +25 °C +85 °C TA = −40°C 2.520 2.510 2.500 2.490 2.480 2.470 2.460 2.450 −50 IR = 100 mA 0.1 1.0 10 IF , FORWARD CURRENT (mA) 100 −25 0 25 50 75 TA , AMBIENT TEMPERATURE (°C) 100 125 Figure 10. Forward Characteristics Figure 11. Temperature Drift OUTPUT (V) e n , NOISE (nV/ √Hz) 1500 1250 3.00 2.50 2.00 1.50 1.00 0.50 0 Input 100 k Output 1000 750 DUT INPUT (V) 10 100 1.0 K f, FREQUENCY (Hz) 10 K 100 k 500 250 0 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 1.0 1.1 Figure 12. Noise Voltage Figure 13. Response Time http://onsemi.com 5 LM285, LM385B ORDERING INFORMATION Device LM285D−1.2 LM285D−1.2G LM285D−1.2R2 LM285D−1.2R2G LM285D−2.5 LM285D−2.5G LM285D−2.5R2 LM285D−2.5R2G LM285Z−1.2 LM285Z−1.2G LM285Z−2.5 LM285Z−2.5G LM285Z−1.2RA LM285Z−1.2RAG LM285Z−2.5RA LM285Z−2.5RAG LM285Z−2.5RP LM285Z−2.5RPG LM385BD−1.2 LM385BD−1.2G LM385BD−1.2R2 LM385BD−1.2R2G LM385BD−2.5 LM385BD−2.5G LM385BD−2.5R2 LM385BD−2.5R2G LM385BZ−1.2 LM385BZ−1.2G LM385BZ−1.2RA LM385BZ−1.2RAG 1.235 V TA = 0°C to +70°C 2.500 V 1.235 V 2.500 V 1.235 V 2.500 V TA = −40°C to +85°C 1.235 V 2.500 V 1.235 V Operating Temperature Range Reverse Break−Down Voltage Package SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 2000 Units / Bag 2000 Units / Bag 2000 Units / Bag 2000 Units / Bag 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Reel 2000 Units / Fan−Fold 2000 Units / Fan−Fold 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 2000 Units / Bag 2000 Units / Bag 2000 / Tape & Reel 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 LM285, LM385B ORDERING INFORMATION Device LM385BZ−2.5 LM385BZ−2.5G LM385BZ−2.5RA LM385BZ−2.5RAG LM385D−1.2 LM385D−1.2G LM385D−1.2R2 LM385D−1.2R2G LM385D−2.5 LM385D−2.5G LM385D−2.5R2 LM385D−2.5R2G LM385Z−1.2 LM385Z−1.2G LM385Z−1.2RA LM385Z−1.2RAG LM385Z−1.2RP LM385Z−1.2RPG LM385Z−2.5 LM385Z−2.5G LM385Z−2.5RP LM385Z−2.5RPG 2.500 V 1.235 V TA = 0°C to +70°C 2.500 V 1.235 V 2.500 V Operating Temperature Range Reverse Break−Down Voltage Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 2000 Units / Bag 2000 Units / Bag 2000 / Tape & Reel 2000 / Tape & Reel 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 98 Units / Rail 98 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 2000 Units / Bag 2000 Units / Bag 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Box 2000 / Ammo Box 2000 Units / Bag 2000 Units / Bag 2000 / Ammo Box 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 LM285, LM385B PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− A 8 5 B 1 4 S 0.25 (0.010) M Y M −Y− G C −Z− H D 0.25 (0.010) M SEATING PLANE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 LM285, LM385B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 9 LM285/D