LV52205MUTBG

LV52205MU Bi-CMOS IC LED Boost Driver with PWM Dimming www.onsemi.com Overview The LV52205MU is a high voltage boost driver for LED drive. LED current is set by the external resistor R1 and LED dimming can be done by changing FB voltage with PWM control. Feature  Operating Voltage from 2.7V to 5.5V  Integrated 42V MOSFET  PWM dimming for Brightness Control  600kHz Switching Frequency UDFN6 2×2, 0.65P Typical Applications  LED Display Backlight Control D1 L1 22μH VBAT C1 1μF C2 1μF SW PWM VIN PWM GND FCAP FB LV52205 C3 220nF R1 10Ω ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January 2015 - Rev. 1 1 Publication Order Number : LV52205MU/D LV52205MU Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max VCC 5.5 Maximum pin voltage1 V1 max SW 42 V V Maximum pin voltage2 V2 max Other pin 5.5 V Allowable power dissipation Pd max Ta = 25C *1 2.05 W Operating temperature Topr -30 to +85 C Storage temperature Tstg -55 to +125 C *1 Mounted on a specified board: 70mm50mm1.2mm (4 layer glass epoxy) Caution 1) Absolute maximum ratings represent the values which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Recommendation Operating Condition at Ta = 25C Parameter Symbol Supply voltage range1 VCC op PWM frequency Fpwm Conditions Ratings VCC Unit 2.7 to 5.5 V 300 to 100k Hz Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics Analog block at Ta  25C, VCC = 3.6V, unless otherwise specified Parameter Symbol Conditions Ratings min typ SHUTDOWN Unit max 0 5 A 1 mA 0.2 0.21 V 1 A Standby current dissipation ICC1 DC/DC current dissipation ICC2 VOUT = 30V, ILED = 20mA FB voltage Vfb PWM duty 100% FB pin leak current Ifb OVP voltage Vovp SW SWOUT ON resistance Ron IL = 100mA 700 m NMOS switch current limit ILIM Vfb = 200mV 0.7 A OSC frequency Fosc High level input voltage VINH PWM 1.5 VCC Low level input voltage VINL PWM 0 0.4 Under voltage lockout Vuvlo VIN falling PWM setup time from Ton 20 us Toff 8.9 ms 0.19 40 41 42 600 2.2 V kHz V V V shutdown PWM low time to shutdown Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 LV52205MU Block Diagram VBAT 4 VCC SW 6 UVLO OCP OVP 600kHz PWM Controler TSD 1 PWM FB 5 FCAP VREF CONTROL VREF 3 2 Pin Connections FB 1 6 VIN FCAP 2 5 PWM GND 3 4 SW Top view Pin Function PIN # Pin Name Description 1 FB Feedback pin. 2 FCAP Filtering capacitor terminal for PWM signal. 3 GND Ground 4 SW Switch pin. Drain of the internal power FET. 5 PWM PWM dimming input (active High). 6 VCC Supply voltage. Expose-pad Connect to GND on PCB. www.onsemi.com 3 GND LV52205MU Pd max -- Ta Allowable power dissipation, Pd max -- W 3.0 Mounted on a specified board: 70×50×1.2mm3 (4 layer glass epoxy) 2.05 2.0 1.0 0.82 0 --30 0 30 60 90 120 Ambient temperature, Ta -- C LED Current Setting LED current is set by an external resistor connected between the FB pin and ground. ILED = VFB/RFB. The VFB can be controled by PWM signal. PWM input is converted into a near DC current by the internal resistor R that was equivalent to 60k (±10%) and the external capacitor CFCAP as a low pass filter with a cut-off frequency fc = 1/2πRCFCAP. The VFB can be adjusted by altering the duty cycle of the PWM signal (See Fig.1). VFB = 200 (mV)  PWM Duty (%) 200 180 160 VFB (mV) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 PWM Duty (%) Fig1. VFB vs. PWM Duty www.onsemi.com 4 100 LV52205MU PWM Control DC-DC Delay max = 4.6ms Ton>20us Toff > 8.9ms PWM Shutdown PWM Enable DCDCENH (IC inside signal) FB Max 4ms @ Cfcap = 22nF (T.C.= 60k * Cfcap) FCAP The time until stable movement max = 8.6ms Fig2.Timing Diagram in PWM signal Open LED Protection If SW terminal voltage exceeds a threshold Vovp (41V typ) for 8 cycles, boost converter enters shutdown mode. In order to restart the IC, PWM setup signal is required again. Over Current Protection Current limit value for built-in power MOS is around 0.7A. The power MOS is turned off for each switching cycle when peak current through it exceeds the limit value. Under Voltage Lock Out (UVLO) UVLO operation works when VIN terminal voltage is below 2.2V. Thermal Shutdown When chip temperature is too high, boost converter is stopped. www.onsemi.com 5 LV52205MU Application Circuit Diagram 10LEDs D1 L1 22μH VBAT C1 1μF C2 1μF 4 SW GND 3 5 PWM FCAP 2 VIN FB 1 6 PWM C3 220nF R1 10Ω L1: VLS3012T-220M49 (TDK), VLF504015MT-220M (TDK) D1: MBR0540T1 (ONsemi), NSR05F40 (ONsemi) C2: GRM21BR71H105K (Murata), C1608X5R1H105K (TDK) 6LEDs D1 L1 10μH VBAT C1 1μF C2 1μF 4 SW GND 3 5 PWM FCAP 2 VIN FB 1 6 PWM C3 220nF R1 10Ω L1: VLS3012T-100M72 (TDK), VLF302512M-100M (TDK) D1: MBR0540T1 (ONsemi), NSR05F40 (ONsemi) C2: GRM21BR71H105K (Murata), C1608X5R1H105K (TDK) www.onsemi.com 6 LV52205MU Typical Characteristics (VIN = 3.6V, L = 22H, T = 25C, unless otherwise specified) Efficiency -- Output current 100 Efficiency -- Output current 100 VIN=3.8V 10LED 90 90 4.2V 80 11LED 10LED Efficency -- % Efficency -- % 8LED 70 60 3.0V 3.6V 70 60 50 50 40 80 0 5 10 15 40 20 5 0 10 LED current -- mA FB voltage -- PWM duty 200 15 20 LED current -- mA FB voltage -- Temperature 200 Duty=100% 180 160 FB voltage -- mV FB voltage -- mV 150 100 140 120 Duty=50% 100 80 60 50 40 Duty=10% 20 0 0 10 20 30 40 50 60 70 80 90 0 --30 100 --15 0 15 LED current -- PWM frequency 60 75 90 0.8 75% 15 LED current -- mA 45 50% 10 VIN current - Temperature 1 ICC -- mA 20 30 Temperature -- °C PWM duty -- % 0.6 0.4 25% 5 0.2 0 0.1 1 10 0 - 40 100 - 20 PWM frequency -- kHz 0 20 40 60 80 100 Temperature -- °C OVP voltage - Temperature 2.40 UVLO voltage - Temperature 43 2.35 UVLO voltage - V OVP voltage - V 42 41 40 39 2.30 2.25 2.20 38 2.15 37 36 - 40 - 20 0 20 40 60 80 2.10 100 Temperature -- °C - 40 - 20 0 20 40 Temperature -- °C www.onsemi.com 7 60 80 100 LV52205MU PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517AB D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B DIM A A1 A3 b D D2 E E2 e K L E PIN ONE REFERENCE 0.10 C 2X 0.10 C 2X A3 SOLDERING FOOTPRINT* 0.10 C 6X A 6X 0.08 C MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.65 BSC 0.20 --0.25 0.35 0.47 0.95 6X A1 C 0.40 1 SEATING PLANE D2 6X e L 4X 1.70 3 1 E2 2.30 6X 6 K 4 6X BOTTOM VIEW b 0.10 C A B 0.05 C DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. LV52205MU is as follows. MARKING DIAGRAM 1 0.65 PITCH T5M T5 M = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 8 LV52205MU Packing Specification of Embossed Carrier Taping UDFN6 (2.0×2.0) 3,000 pcs/reel .EMBOSSED CARRIER TAPING - .Embossed carrier tape dimensions Embossment Sprocket hole Unit• Fmm - .Tape mounting direction Reel Embossed Carrier tape Index mark Direction of unreeling www.onsemi.com 9 LV52205MU .TAPE STRENGTH - .Tensile strength of the carrier tape - .Peel strength of the top cover tape ( )Peel angle ( )Peel rate ( )Peel of strength Min.10N 165 to 180 relative to the tape adhesive surface 300mm / minute 0.1N to 1.0N .PARTS No. ON BAR CODE LABEL Type number T B G LEAD FREE symbol Direction indication .REEL DIMENSIONS 1.6 MIN 10.9 MAX TYPE:P-RRM-08B UNIT:mm www.onsemi.com 10 LV52205MU Carrier tape type number N22986D001 SANYO Package code Maximum number of ICs contained (pcs.) Reel Inner box 3,000 30,000 Packing form Inner box. B50766P001 10 Reels contained UDFN6(2.0*2.0) Dimensions:mm 190 136 186 MPN Label HOURS:UNLIMITED Packing Method Inner box Direction of unreeling MPN Label Put 10 Reel into Inner box www.onsemi.com 11 Fix by tape MPN Sticher 1 LV52205MU ORDERING INFORMATION Device LV52205MUTBG Package UDFN6 (2x2) (Pb-Free) Shipping (Qty / Packing) 3000 / Tape & Reel ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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