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LV8968BBUWR2G

LV8968BBUWR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    LQFP48

  • 描述:

    IC 3PHASE BLDC/PMSM PREDR

  • 数据手册
  • 价格&库存
LV8968BBUWR2G 数据手册
LV8968BBUW Multi-purpose BLDC Gate-driver for Automotive Overview The LV8968BB is a 3−phase BLDC/PMSM pre−driver with integrated phase voltage sensing and logic level FET compatibility. The wide operating voltage range and AEC−Q100 qualification make this device ideal for automotive applications. Six gate drivers provide 400 mA (typ) gate current to external power bridges allowing use of low resistance power FETs as well as logic level FETs. All FETs are protected against over−current, short−circuit, over−temperature and gate under−voltage. A multitude of protection and monitoring features make this device suitable for ISO26262 applications. Three independent low−side source pins allow multiple shunt measurement. The device also includes a programmable linear regulator, a fast current−sense amplifier and a window watchdog for microcontroller support. The SPI interface allows for real time parameter setup and diagnostics. Critical system parameters can be programmed into non−volatile OTP memory. Junction temperature tolerance up to 175°C and control via wide level WAKE and PWM signals make the LV8968BB an ideal motor pre−driver for automotive applications such as engine cooling fans, fuel, oil, and hydraulic pumps. www.onsemi.com MARKING DIAGRAM SPQFP48 CASE 131AN MP WL Y WW ORDERING INFORMATION Device Features • Full Drive Power from 8 V to 28 V Supply Voltage with Transient • • • • • • • • • • • Tolerance from 4.5 V to 40 V Extended Voltage Range from 6 V to 33 V Using Logic−level Mode Up to 30 kHz Motor PWM with Individual Six Gate Control or Drive−3 Mode with Integrated Programmable Dead−Time 5 V / 3.3 V Linear Regulator for External Loads up to 50 mA Extensive System Protection Features Including: ♦ Drain−Source Short Detection for External FET ♦ Over−current Shutoff ♦ Low Gate Voltage Warning ♦ Over−temperature Warning and Shutoff ♦ Over / Under−voltage Protection SPI Interface for Parameter Setup and Diagnostic Access, Dynamic Access to Dead−Time, Amplifier Gain, and Short Circuit Levels Non−Volatile (OTP) Memory for Storing Critical System Parameters Wide Voltage Enable Line and PWM Interface Integrated Window Watchdog Timer Function AEC−Q100 Qualified and PPAP Capable Thermally Efficient Exposed Die 48 Pin SQFP Package for Transient Operation Up to 175°C These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant © Semiconductor Components Industries, LLC, 2018 March, 2019 − Rev. 3 1 = Assembly Location = Wafer Lot = Year = Work Week LV8968BBUWR2G Package Shipping† SPQFP48K (Pb−Free / Halogen Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. SAFETY DESIGN ASILB ASILB Product developed in compliance with ISO26262 for which a complete safety package is available. Typical Applications • Automotive Fuel, Oil, Water or Hydraulic • • • • Pumps Automotive Actuators Automotive HVAC and Cooling Fans Battery Operated Hand Power Tools White Goods Publication Order Number: LV8968BBUW/D LV8968BBUW INTERNAL EQUIVALENT BLOCK DIAGRAM AND APPLICATION CIRCUIT BAT Opt. Reverse Polarity Protection Opt. Charge Pump KEY PWM V3RO V3RI WAKE VS VGIN VG PWMIN RX D BS 1 BS 2 BS 3 VCC VDH EN GH1 Microcontroller VMCRES DIAG CSB SCLK SI GH2 LV8968BB GH3 SH 1 SO AOUT IH1 IL1 IH2 IL2 IH3 IL3 SH 2 SH 3 GL1 GL2 GL3 SL [1:3] ISP AGND ISO ISN GND Figure 1. Typical Application Diagram www.onsemi.com 2 3 LV8968BBUW SH3 GL3 GH3 BS3 SL2 SH2 GL2 GH2 BS2 SL1 GL1 SH1 PIN ASSIGNMENT 36 25 24 GH1 SL 3 BS1 NC VDH ISP VG ISN NC ISO LV8968BB SQFP48K (7 × 7) 7 mm × 7 mm VGIN VS AOUT AGND WAKE NC NC SO EN SI V3RO V3RI SCLK 48 13 NC PWMIN RXD DIAG VMCRES IL3 IH3 IL2 IH2 IL1 IH1 12 VCC 1 CSB Figure 2. LV8968BB Pinout Table 1. PIN ASSIGNMENTS & DESCRIPTION Name No. VCC 1 5 V or 3.3 V linear regulator output. (Selected by SPI register setting) Can provide up to 50 mA. IH1 2 Active high, digital control input to activate GH1. IL1 3 Active low, digital control input to activate GL1. IH2 4 Active high, digital control input to activate GH2. IL2 5 Active low, digital control input to activate GL2. IH3 6 Active high, digital control input to activate GH3. Description IL3 7 Active low, digital control input to activate GL3. VMCRES 8 Open drain reset output for the microcontroller. Goes low for VCC under−voltage fault, optionally for watchdog reset and thermal shutdown. DIAG 9 Open drain error or diagnostic output to be connected to microcontroller interrupt line. DIAG functionality is defined by internal register settings. RXD 10 Open drain PWM data output to microcontroller. NC 11 No connection. PWMIN 12 Input for battery level control signal. The digital level of PWMIN appears on RXD. CSB 13 High voltage level translator. Digital level is active low, digital SPI interface chip selection pin. SCLK 14 SPI interface clock input pin. SI data is latched during the rising edge. www.onsemi.com 3 LV8968BBUW Table 1. PIN ASSIGNMENTS & DESCRIPTION (continued) Name No. Description SI 15 SPI interface serial data input pin. SO 16 SPI interface serial data output pin. High level is pulled to VCC. NC 17 No connection. AGND 18 Ground pin. AOUT 19 Output for various internal analog signals. Actual signal is selected via SPI register. Scaled to 2 V full scale range. ISO 20 Output pin for current sense amplifier. Connect to AD converter input of the microcontroller for current sensing. Gain, reference, and over−current threshold is programmable via SPI register. Full scale range = 2 V. ISN 21 Current sense amp minus input pin. Connect this pin to the GND side of the shunt resistor with Kelvin leads. ISP 22 Current sense amp plus input pin. Connect this through to top side of shunt resistor with Kelvin leads. NC 23 No connection. SL3 24 Low side source connection of the power stage. Return path for gate current of GL3. Connect to source of FET controlled by IL3 or to common source of the power stage. GL3 25 Gate driver output for low side FETs. Switches voltage level between VG and SL3. Use at least 10 W gate resistors to protect against current spikes. SH3 26 Connection for the motor phase terminal controlled by GH3 and GL3. Return path for high−side drivers and input for back EMF sensing. GH3 27 Gate driver output for high side FETs. Switches voltage level between BS3 and SH3. Use at least 10 W gate resistors to protect against current spikes. BS3 28 Supply pin for high side driver GH3. Needs a bootstrap capacitor to SH3 and a diode in reverse connection to VG. SL2 29 Low side source connection of the power stage. Return path for gate current of GL2. Connect to source of FET controlled by IL2 or to common source of the power stage. GL2 30 Gate driver output for low side FETs. Switches voltage level between VG and SL2. Use at least 10 W gate resistors to protect against current spikes. SH2 31 Connection for the motor phase terminal controlled by GH2 and GL2. Return path for high−side drivers and input for back EMF sensing. GH2 32 Gate driver output for high side FETs. Switches voltage level between BS2 and SH2. Use at least 10 W gate resistors to protect against current spikes. BS2 33 Supply pin for high side driver GH2. Needs a bootstrap capacitor to SH2 and a diode in reverse connection to VG. SL1 34 Low side source connection of the power stage. Return path for gate current of GL1. Connect to source of FET controlled by IL1 or to common source of the power stage. GL1 35 Gate driver output for low side FETs. Switches voltage level between VG and SL1. Use at least 10 W gate resistors to protect against current spikes. SH1 36 Connection for the motor phase terminal controlled by GH1 and GL1. Return path for high−side drivers and input for back EMF sensing. GH1 37 Gate driver output for high side FETs. Switches voltage level between BS1 and SH1. Use at least 10 W gate resistors to protect against current spikes. BS1 38 Supply pin for high side driver GH1. Needs a bootstrap capacitor to SH1 and a diode in reverse connection to VG. VDH 39 Sense input for supply voltage and short circuit detection of high side power FETs. Connect through 100 W resistor to common drain of the power bridge. VG 40 Power supply pin for low−side gate drive GL[1−3] directly and GH[1−3] through bootstrap circuit. Connect decoupling capacitor between VG and GND. NC 41 No Connection. www.onsemi.com 4 LV8968BBUW Table 1. PIN ASSIGNMENTS & DESCRIPTION (continued) Name No. Description VGIN 42 Gate supply input. Normally shorted to VS. Insert a charge pump circuit between VS and VGIN if low voltage operation is required. VS 43 Power supply pin. WAKE 44 WAKE up pin for internal power supply. “H” => Operating mode, “L” or “Open” => Sleep mode. NC 45 No connection. EN 46 Active high digital input. A high on EN will activate the outputs. EN can be used as a hold input to allow an external microcontroller to keep the IC operating even if WAKE is low. A falling edge on EN clears the error flags. V3RO 47 Internal regulator output pin. Connect capacitor between this pin and GND. V3RI 48 Internal regulator feedback pin (Control circuit and Logic power supply). Connect to V3RO pin. Do not load beyond 1 mA. www.onsemi.com 5 LV8968BBUW PIN FUNCTIONALITY VS VS VS V3RO V3RI VCC TYPE1: V3RI TYPE2: V3RO, VCC VS VS VMCRES DIAG RXD IH1 IH2 IH3 SCLK SI 100 kW TYPE3: IH1, IH2, IH3, SCLK, SI, EN BS VCC GH[1−3] 30 kW IL1 IL2 IL3 SH[1−3] 240 kW TYPE4: VMCRES, DIAG, RXD TYPE5: IL1, IL2, IL3, CSB TYPE6: BS[1−3], GH[1−3], SH[1−3] VG V3RI V3RI AOUT ISO GL[1−3] ISP ISN SL[1−3] TYPE7: GL[1−3], SL[1−3] TYPE8: AOUT, ISO TYPE9: ISP, ISN VS VS VS SO PWMIN TYPE10: SO 100 kW WAKE TYPE11: WAKE www.onsemi.com 6 TYPE12: PWMIN LV8968BBUW PIN FUNCTIONALITY (continued) VGIN VG VDH TYPE13: VDH TYPE14: VGIN, VG Figure 3. Pin Functionality Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Pins Ratings Unit Supply Voltage VS, VDH, VGIN −0.3 to 40 V Gate Voltage to GND VG −0.3 to 40 V Bootstrap to GND BS[1−3] −0.3 to 40 V Bootstrap to SH[1−3] BS[1−3] −0.3 to 40 V Logic Power Supply V3RI, V3RO −0.3 to 3.6 V 5 V Regulator Voltage VCC −0.3 to 5.5 V VS Level Signal Voltage WAKE, PWMIN −0.3 to 40 V Digital Inputs CSB, EN, SCLK, SI, IH[1−3], IL[1−3] −0.3 to 40 V Open Drain Voltage VMCRES, RXD, DIAG −0.3 to 40 V Digital Output Voltage SO −0.3 to VVCC+0.3 V Current Sense Input ISP, ISN −3 to VV3RI+0.3 V Analog Output ISO, AOUT −0.3 to VV3RO+0.3 V High−side Output to GND GH[1−3] −3 to 40 V Motor Phase SH[1−3] −3 to 40 V Low−side Output to GND GL[1−3] −3 to 40 V Low−side Source Pin to GND SL[1−3]] −3 to 40 V Voltage between HS Gate and Phase GH[n] to SH[n] for n = {1,2,3} −0.3 to 20 V Allowable Power SQFP48K at 70°C 2430 mW Thermal Resistance (JESD51−7) JA = Junction Ambient 33 °C/W JC = Junction Case 2 °C/W Storage Temperature −55 to 150 °C Junction Temperature −40 to 150 °C 150 to 175 °C ESD Human Body Model (Note 1) AEC Q100_002 2 kV ESD Charge Device Model AEC Q100_011 750 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Operation outside the Operating Junction temperature is not guaranteed. Operation above 150°C should not be considered without a written agreement from ON Semiconductor Engineering staff. www.onsemi.com 7 LV8968BBUW Table 3. ELECTRICAL CHARACTERISTICS (Valid at a junction temperature range from −40°C to 150°C, for supply Voltage 8.0 V ≤ VS ≤ 25 V unless otherwise specified. Typical values at 25°C and VS = 12 V unless specified otherwise) Parameter Symbol Condition Min. Typ. Max. Unit 12 INTERNAL REGULATOR VS supply voltage range VS supply current WAKE input voltage VSNO Normal mode (Note 2) 8 28 V VSLO Logic level mode 6 33 V 4.5 40 V 11 16 mA 25 50 mA 1.3 V VSLOF Full logic functionality, driver stage off. (t < 400 ms) (Note 3) ISTBY Standby mode VS & VGIN shorted VS = 6 V~25 V ISLEEP Sleep mode at 25°C VS & VGIN shorted 7 VTHWKL Low level 0 VTHWKH High level 2.7 WAKE pulldown resistor RPDWK 50 PWMIN switching levels VTHPIL Low level 0 VTHPIH High level 0.6 × VS PWMIN pulldown resistor RPDPI 50 PWMIN frequency range FPWMIN 0 V3RO 3.135 100 VS V 200 kW 0.4 × VS V VS V 200 kW 30 kHz 3.3 3.465 V 100 INTERNAL REGULATOR V3RO output voltage VCC CONSTANT VOLTAGE OUTPUT Output voltage 5V VC5RO REGSEL = 1, No load 4.9 5.0 5.1 V Output voltage 3.3V VC3RO REGSEL = 0, No load 3.23 3.3 3.37 V VC3RL VS = 4.5 V, IVCC = −50 mA 3.0 Voltage regulation VCCVR Load regulation VCCLR Output current limit V Io = −5 mA to −50 mA VCCILIM 50 50 mV 80 mV 180 mA GATE DRIVERS Low−side Rdson to SL[1−3] RONLSSK “L” level Io = 10 mA 6 15 W Low−side Rdson to SH[1−3] RONLSSC “H” level Io = −10 mA 12 22 W High−side Rdson to SH[1−3] RONHSSK “L” level Io = 10 mA 6 15 W High−side Rdson to BS[1−3] RONHSSC “H” level Io = −10 mA 22 W Propagation delay ON PDON 50% IHx to 20% GHx. Cload = 0 nF 12 120 nS Propagation delay OFF PDOFF 50% IHx to 80% GHx. Cload = 0 nF 120 nS Propagation delay ON Difference GH[1−3],GL[1−3] DPDON a.3 phase difference of GH1, GH2 and GH3 b.3 phase difference of GL1, GL2 and GL3 −20 20 nS Propagation delay OFF Difference GH[1−3],GL[1−3] DPDOFF a.3 phase difference of GH1, GH2 and GH3 b.3 phase difference of GL1, GL2 and GL3 −20 20 nS 800 mA BS VOLTAGE BS internal current IBSC www.onsemi.com 8 LV8968BBUW Table 3. ELECTRICAL CHARACTERISTICS (continued) (Valid at a junction temperature range from −40°C to 150°C, for supply Voltage 8.0 V ≤ VS ≤ 25 V unless otherwise specified. Typical values at 25°C and VS = 12 V unless specified otherwise) Parameter Symbol Condition Min. Typ. Max. Unit GATE VOLTAGE OUTPUT (VG) VG output voltage VG current limit VGNO Normal mode, IVG < 40 mA 7.0 11.0 12.0 V VGLO Logic level mode 5 6 7 V VGOL VS = 6 V, IVG < 30 mA 5 180 mA VGILIM 40 BEMF DETECTION BEMF divider ratio BEMFDR BEMF divider mismatch BEMFDM BEMF divider settling time (20% − 80% FSR) BEMFST 0.5 VDH divider ratio VDHDR 1/32 VDH divider settling time (20% − 80% FSR) VDHST 0.5 Thermal voltage VTMPH Thermal slope VTEMPSL AOUT full scale range AOFLSCR AOUT output resistance RONAO AOUT output current 1/16 −2 2 % 2 ms 2 ms Tj = 155° (Note 4) 705 mV (Note 4) −1.9 mV/°C IAOUT = ±100 mA IAO −100 2.1 V 200 W 100 mA CURRENT SENSING (ISP, ISN, ISO) ISP, ISN input current IISP/N 50 mA Reference voltage ISO VRCSA0 OCVR = 0, GAIN = 30, ISP = ISN = 0.2 V 1.425 1.5 1.575 V VRCSA1 OCVR = 1, GAIN = 30, ISP = ISN = 0.2 V 0.125 0.2 0.275 V CSAG00 OCGAIN = 00 6.53 7.5 8.63 CSAG01 OCGAIN = 01 (Note 4) 15 CSAG10 OCGAIN = 10 (Note 4) 22.5 CSAG11 OCGAIN = 11 Gain −0.2 V ≦ VISP, VISN ≦ 2 V −50 26 30 1 34.3 Common mode range CSACMR −0.2 2 V ISN, ISP differential voltage DVCSAIN −200 200 mV ISO full scale range CSAFLSC R 0.1 2.9 V Amplifier settling time (20% − 80% FSR) CSAOST Gain = 7.5, 0.25 V < VISO < 3 V 5400 ns ISO output resistance RCSAO IISO = ±100 mA 200 W ISO output current ICSAO 100 mA Over−current voltage level VISP−VISN −100 VTHCSA00 OCDL = 00 180 200 220 mV VTHCSA01 OCDL = 01 130 150 170 mV VTHCSA1X OCDL = 10,11 80 100 120 mV ACTIVE HIGH DIGITAL INPUTS (EN, SCLK, SI, IH[1−3]) High−level input voltage VTAHH Low−level input voltage VTAHL Pull−down resistance RPDAH 0.8 × V3RO 50 www.onsemi.com 9 V 100 0.2 × V3RO V 200 kW LV8968BBUW Table 3. ELECTRICAL CHARACTERISTICS (continued) (Valid at a junction temperature range from −40°C to 150°C, for supply Voltage 8.0 V ≤ VS ≤ 25 V unless otherwise specified. Typical values at 25°C and VS = 12 V unless specified otherwise) Parameter Symbol Condition Min. Typ. Max. Unit ACTIVE LOW DIGITAL INPUTS (CSB, IL[1−3]) High−level input voltage VTALH Low−level input voltage VTALL Pull−up resistance to VCC RPDAL V 0.8 × V3RO 15 30 0.2 × V3RO V 60 kW DIGITAL OUTPUTS (SO) Output voltage VSOH Io = −1 mA VSOL Io = 1 mA VVCC −0.2 V 0.2 V OPEN DRAIN OUTPUTS (VMCRES, DIAG, RXD) Output voltage VODL Io = 1 mA 0.2 V Pin leakage current ILKOD Vo = 5.5 V 10 mA TWT0 TSTS = 0 125 150 WARNING AND PROTECTION Thermal warning (Note 4) (Junction temperature) °C TWT1 TSTS = 1 HYSTW Hysteresis TSDT0 TSTS = 0 150 °C TSDT1 TSTS = 1 175 °C HYSTSD Hysteresis VSOVTH Over−voltage 16 17 18 V VSUVTH Under−voltage 7 7.5 8 V VDH voltage warning VDHOVTH Over−voltage 25 26.5 28 V VG under−voltage VGNUVTH Normal mode 5 6 7 V VGLUVTH Logic level mode 3.5 4 4.5 V VC3UVTH REGSEL = 0 2.3 2.7 V VC5UVTH REGSEL = 1 3.8 4.2 V 2.7 V Thermal shutdown (Note 4) (Junction temperature) VS voltage warning VCC under−voltage V3R Power on Reset FET short protection level °C 25 °C 25 VPOR °C FSDL0000 FSDL = 0000 75 100 125 mV FSDL0010 FSDL = 0010 240 300 360 mV FSDL0100 FSDL = 0100 400 500 600 mV FSDL1000 FSDL = 1000 720 900 1080 mV FSDL1111 FSDL = 1111 1280 1600 1920 mV WATCHDOG WDFOW WDWT[2:0] typical values 3.2 409.6 ms WD closed window time WDCW WDWT[2:0] typical values 0.8 102.4 ms WD open window time WDOW WDWT[2:0] typical values 1.6 204.8 ms WD reset duration WDRD WD first open window 400 ms SPI INTERFACE SPI clock frequency FSPI 4.5 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. VDH over voltage warning will be issued. See the specification of the VDH over voltage warning threshold voltage VDHOVTH. 3. Valid for limited time duration of 400 ms (Load dump) 4. Not tested in production. Verified during qualification only. www.onsemi.com 10 LV8968BBUW DETAILED FUNCTIONAL DESCRIPTION PWMIN RXD WAKE V3RO V3RI WAKE V3RO PWMIN PWM Interface RX LVSD VCC VGIN VS 2 VGIN VG VG Gate Voltage Regulator Internal Regulator LDO 3.3 V / 5 V VCC VS BS 1 BS 2 BS 3 POR VDH BS1 GH1 SH1 EN VMCRES System State Machine EN MCRESWindow−Watchdog DIAG DIAG CSB CSB SCLK GL1 GH 1 SL1 GH 2 BS2 Diag Control GH 3 GH2 Registers SH2 Gate−Drive SCLK SI SI SO SO AOUT VDH OTP SPI Interface LV 89031 SH 1 SH 2 AOUT IH1 IH1 IL1 IL1 IH2 IH2 IL2 IL2 IH3 IH2 IL3 IL2 SH 3 Thermal Monitor Motor Control Logic GL1 Short−Circuit Monitor Drive 3 Drive 6 GL2 GL3 Overcurrent Monitor SL [1:3] Digital Circuit GL2 SL2 BS3 GH3 SH3 GL3 SL3 ISP ISP ISO OP−AMP LV8968BB ISN AGND ISO AGND Figure 4. Block Diagram www.onsemi.com 11 ISN LV8968BBUW Chip Activation, System States and Shutdown (EN, WAKE) Once the supply voltage VS rises above 4.5 V(min), the LV8968BB enters Sleep mode. In Sleep mode system states are controlled with pin WAKE. Table 4. OPERATION MODES Mode WAKE EN V3RO Logic VCC VG SPI Drivers Sleep L NA Disable Reset Disable Disable Disable High−Z Standby H L Enable Active Enable Enable Enable Low Normal NA H Enable Active Enable Enable Enable Active activated to display internal errors. During Standby mode full SPI access is possible. Note that if the CPU watchdog was enabled via OTP, a VMCRES low will be asserted after 410 ms(typ) unless the watchdog is being triggered properly. See section “Watchdog”. A high on EN takes the LV8968BB from Standby to Normal mode. Normal mode allows motor control and the IC accepts control inputs via the motor control pins IH[1−3], IL[1−3]. A low on EN disables the motor stage regardless of the PWM input and returns the part back to Standby mode. The IC is shut down by taking WAKE below 1.3 V(min) if EN is low. If EN is high, a low on WAKE will be ignored until the microcontroller pulls EN low. A high level on WAKE > 2.7 V(max) activates the IC from sleep mode and enables the internal linear regulator at V3RO. Once the voltage on V3RO as sensed on V3RI has passed the power on reset (POR) threshold the system oscillator starts, and after 3.2 ms(typ) releases the internal digital reset. OTP register contents are loaded into the system registers defining the power on state of the LV8968BB and the VCC regulator voltage. VCC is powering up next, holding the CPU reset line VMCRES low until VCC passes its under−voltage level. During the entire wake−up sequence of 1.05 ms(typ) DIAG is masked for VG under−voltage. After wake−up is complete, the IC enters Standby mode and DIAG is www.onsemi.com 12 LV8968BBUW WAKE 1 ms (Max) V3RO , V3RI Power On Reset Reset Active Reset Analog & Driver Standby Standby Active Standby Download 125 ms (Max) OTP Download VCC Standby Standby Execute MRODL Command Download 125 ms (Max) (Protections are masked) Active Standby VCC 1.05 ms (Max) VCC Under Voltage Mask Mask Active Mask VMCRES VG Standby Standby Active Standby VG 1.05 ms (Max) VG Under Voltage Mask Mask Active Mask EN Over−current & FET Short Mask Mask Other Protection Mask SMOD[1:0] Register Mask SO Pin = Hi-Z (Sleep Mode) Driver Output OFF NOTE: Active Mask Active SMOD[1:0] = 1h (Start Up Time) × 1 Mask SMOD[1:0] = 2h (Standby Mode) SMOD[1:0] = 3h (Normal Mode) If EN = H, driver can drive according to input Even if EN = H, driver status is not changed to normal mode. Figure 5. Powerup and Shutdown Timing www.onsemi.com 13 SMOD[1:0] = 2h (Standby Mode) SO Pin = Hi-Z (Sleep Mode) LV8968BBUW • A linear regulator to provide 5 V or 3.3 V for external Operating Voltage Range Normal operation with full functionality is guaranteed from 8 V to 25 V. The device will operate from 4.5 V to 40 V with limited performance: • Shutdown: VS < 4.5 V The IC will be off. Gate drivers is Hi−Z. loads such as a microcontroller The VG regulator for the gate voltages of the inverter stage Internal Regulator (V3RO, V3RI) The internal regulator provides 3.3 V at V3RO and takes its feedback from V3RI. V3RO and V3RI need to be connected externally and bypassed to GND for stability. This regulator may be used for pullup resistors on the open drain outputs, but the load should not exceeding 1 mA. Under−voltage: 4.5 V < VS < 6 V VS under−voltage warning will be flagged. VG under−voltage warning may be asserted. If VCC is programmed to provide 3.3 V to the microcontroller, it will be supplied. If motor operation is required during Undervoltage, see section below ”Motor Operation during Under−voltage”. LDO 3.3 / 5 V (VCC) VCC becomes active during Standby mode and can be configured via registers to provide 5 V or 3.3 V. VMCRES low is asserted if the output voltage drops below the threshold levels. VCC may power external loads up to 50 mA (max) and must be bypassed to GND with an external capacitor. The voltage level is programmed in register VCVSEL with OTP backup. Low Voltage: 6 V < VS < 8 V VS under−voltage warning will be flagged. VG under−voltage warning may be asserted. VCC will provide power to the microcontroller. The motor can operate but may be in low gate enhancement mode if standard level FETs are used. If full enhancement is required, see section below ”Gate Voltage Regulator (VGIN, VG)” Gate Voltage Regulator (VGIN,VG) The gate voltage regulator is supplied by VGIN and regulates to either 11 V (typ) or 6 V (typ) at VG. The voltage level is programmed in register VGVSEL with OTP backup. VG provides the drive voltage for the low−side drivers GL[1−3] directly and for the high side drivers BS[1−3] through the bootstrap circuitry. The output is current limited to 40 mA(min). The output at VG should be bypassed with a capacitor CVG to GND which should be at least 20 times the maximum gate charge of the power FETs. Normal: 8 V < VS < 16 V Normal operation. High Voltage: Operation 16 V < VS < 25 V Normal operation. VS over−voltage warning will be flagged. Over−voltage: 25 V < VS < 40 V VDH over−voltage warning will be flagged. The driver stage can be programmed to let the motor freewheel to protect the bootstrap circuitry at BS[1−3] from overstress. This works if the motor is not operating in field weakening. In case of active braking, or field weakening operation, the microcontroller will have to react to a VDH over−voltage warning by either disabling the driver stage or activating all low side FETs to brake the motor. The maximum allowable VS level for motor operation is 40 V − VVGmax = 28 V or 33 V depending on the state of register VGVSEL. For additional protection add zener diodes to the bootstrap pins. Motor Control Inputs Once the LV8968BB is in standby mode with the supplies running, a microcontroller can facilitate motor control via the inputs EN, IL[1−3], IH[1−3]. All are VS compatible. Additionally, PWMIN a supply level compatible level shifter can bring a high voltage control such as a PWM signal or a crash indicator to microcontroller supply level. PWM Interface (PWMIN, RXD) The PWM interface translates a VS level signal with a threshold of 50%(typ) VS to a digital signal appearing at RXD. This signal can be used for input PWM translation or for CRASH signal communication from outside the application to the microcontroller. Motor Operation during Under−voltage An under−voltage charge pump is not included into the LV8968BB to save cost. If under−voltage operation of the motor is desired either an external charge pump must be inserted between VS and VGIN, or it is possible to use the device in logic level mode by setting MRCONF0[1]. In the latter case logic level FETs must be used for the inverter stage. Drive Enable (EN) Taking EN high enables the output drivers GH[1−3] and GL[1−3] for control by the microcontroller, taking EN low disables them by switching all of them to the sources of the corresponding external FETs. In addition, a high on EN will override a low on WAKE allowing the microcontroller to keep the motor running even after the WAKE line has gone low. System Power Supplies Three power supplies are integrated into the LV8968BB, all are supplied by VS: • An internal 3.3 V regulator which provides power to the digital and interface section www.onsemi.com 14 LV8968BBUW Drive 6 Mode In drive 6 mode, each input independently controls its corresponding output requiring 6 independent PWM channels in the microcontroller. A “high” on IH1 will result in a “high” on GH1. A “high” on IL1 will result in a “low” on GL1, and so forth. Trying to force a short by driving IH1 high and IL1 low will be ignored by the logic of the LV8968BB. Motor Control (IL[1−3] IH[1−3]) The individual motor phases are controlled by inputs IL[1−3] and IH[1−3]. IH[1−3] are active high, while IL[1−3] are active low allowing for parallel control with only three PWM outputs using internal dead time. To control the driver stage with GH [1−3] and GL[1−3] EN has to be “high”. The LV8968BB will insert an adjustable dead time during output transitions to prevent short circuiting the FETs. Two drive modes exist: Table 5. DRIVE 6 MODE Input IH[1−3] Output IL[1−3] GH[1−3] GL[1−3] L L L H L H L L H L L L H H H L Drive 3 Mode This mode is suitable for small microcontrollers which do not have 6 dedicated PWM control lines. IL[1−3] serve as enable signals for the phase drivers GH[1−3] and GL[1−3] while IH[1− 3] serve as their PWM inputs. Connect the microcontroller’s PWM line to IH[1−3] and the phase select lines to the individual IL inputs 1−3 respectively. Table 6. DRIVE 3 MODE Input Output IH[1−3] IL[1−3] GH[1−3] GL[1−3] L L L L L H L H H L L L H H H L implemented that begins counting after one driver has been turned off, and blocks the turning−on of the complementary driver for a programmable time tFDTI from (typ) 200 ns < tFDTI < 3.2 ms (typ). Gate Drive The gate drive circuit of the LV8968BB includes 3 half−bridge drivers which control six external N−Channel FETs. The high side gate drivers GH[1−3] switch their gate connection either to corresponding BS[1−3] pin or the respective phase connection SH[1−3]. The low−side gate drivers GL[1−3] are switched from VG to the corresponding source connection SL[1−3]. Both high and low side switches are hard switching, but saturate around 400 mA (typ) for pullup/down currents. Slope control has to be implemented with gate resistors. Dead−time Counter The dead−time counter uses a fixed minimum dead−time which can be programmed into 4bit parameter FDTILIM. The dead−time is never allowed to fall below that value. A dynamic dead time register FDTI allows dead time variation during motor operation. This register is uploaded at the beginning of every dead time measurement. Flag FDTIBSY is high when a dead time value has been written to register FDTI but was not uploaded to the counter, yet. Two consecutive writes to FDTI before a counter upload are flagged as an SPI error by setting bit SACF in the SPI status register GSDAT. “Through Current Prevention Function” Current shoot−through protection of the bridge−drivers is implemented by ignoring inputs at IH[n] and IL[n] that would result in turning on of both high−and low−side FET at the same time. In addition a dead−time counter is www.onsemi.com 15 LV8968BBUW SPI write FDTIBSY FDTI = 4 H write is ignored by FDTIBSY = H. FDTI 0h 2h 6h FDTI and FDTILIM are compared and smaller (longer deadtime) one is selected. FDTILIM 5h Gx_FDTI_LT 0h 2h 5h Gx_EDGE DEADTIME 3.2 us 2.8 us 2.2 us Figure 6. Dead Time Programming Short Protection To protect against FET shorts the drain−source voltage of the active external power FETs is monitored. The drain source voltage of the high side FETs is monitored between VDH and the corresponding source SH[1−3]. While the low side FETs are monitored between SH[1−3] and SL[1−3]. After activation of the FET the short detection is masked for time tFSFT to allow for signal settling. If after the masking time tFSFT the FET voltage exceeding VFSDL continues for tFSDT, a FET short error is flagged. For details see “System Errors and Warnings” on page 18. 4 bit register FSDL selects the short−circuit shutoff voltage between 1.6 V > VFSLD > 100 mV(typ). The masking time can be between 0.8 ms < tFSF < 3.2 ms(typ) as defined by register FSFT, and the debounce time is between 3.2 ms < tFSDT < 12.8 ms(typ) as selected by FSDT. These registers are dynamic and FSDL can be changed during motor operation, though FSFT and FSDT can be changed at EN = L. operation. The offset is determined by CSOFEN relative to an internal reference which can be either 200 mV(typ) for single ended sensing, or 1.5 V(typ) for sensing current in both directions. The output of the current sense amplifier appears on ISO with a full scale range of 3 V. Current Sensing and Over−current Shutoff Single shunt current sensing can be implemented with the integrated high speed sense amplifier. It amplifies the voltage across ISP – ISN with a programmable gain defined by register CSGAIN to be 7.5, 15, 22.5 or 30. Access to this register is dynamic, allowing gain adjustment during motor Temperature Sensing The LV8968BB monitors internal junction temperature Tj. The voltage representing this temperature (VPTAT) can be sampled at AOUT as described below. Thermal warnings and errors are issued if TJ exceeds the levels defined by THTSEL: Over−current Shutoff A parallel path implements fast over−current shutoff of the driver stage. Over−current shutoff is triggered if the voltage across ISP − ISN exceeds a programmable level of 100, 150 or 200 mV(typ) − as defined by register OCDL. In over−current shutoff all gate drivers go to Hi−Z, turning the power FETs high−impedance and letting the motor freewheel – this reaction is maskable. For more information on masking and recovery see section “System Errors and Warnings” on page 18. To suppress switching transients from causing an over−current masking time 0.2 ms < tOCMASK < 3.2 ms can be programmed into register OCMASK. Table 7. THERMAL THRESHOLDS ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ THTSEL Thermal Warning Thermal Shutoff 0 125°C 150°C 1 150°C 175°C If thermal error shutoff is activated, VG and VCC turn off, and the driver stage goes high impedance. As a result VMCRES goes low and SPI communication is disabled as well. The exact failure modes and masks are described in section “System Errors and Warnings”. Back EMF and other Measurements The LV8968BB includes a multiplexer for measuring the phase voltages, the motor voltage and the IC temperature. Depending on the state of AOUTSEL the following voltages appear on AOUT: www.onsemi.com 16 LV8968BBUW Table 8. AOUT SELECTION MRAOSEL[2:0] Pin Formula 0 VDH VVDH = 32 VAOUT Motor Supply Voltage Comment 1 SH1 VSH1 = 16 VAOUT Phase Voltage 1 2 SH2 VSH2 = 16 VAOUT Phase Voltage 2 3 SH3 VSH2 = 16 VAOUT Phase Voltage 3 4, 5 − TJ = (VAOUT − 995.7 mV) / 2 mV °C 6, 7 − High Impendance Internal junction temperature during closed window time or the watchdog time expires. Watchdog error effects can be customized. For detailed error behavior a masking see section “System Errors and Warnings”. After a watchdog induced microcontroller reset, the error register contents of registers MRDIAG[0] remain conserved until an SPI read access. This helps the microcontroller identify the fault condition. Watchdog The LV8968BB includes a window watchdog to monitor the microcontroller. The size of the watchdog window is defined by register WDTWT. For detailed timing information see Figure 7: Window Watchdog Timing. A write access to register MRRST during open window time resets the watchdog timer and it starts counting again. The watchdog will issue an error whenever MRRST is written to WAKE MCRES Twt Tcw Tcw Tfow WDT Status First Open Window Standby Twt Closed Open Window Window Reset by MRRST= 00h command Closed Window Open Window DIAG WAKE MCRES Tmr Tcw Tcw Twt (Not reset) WDT Status Open Window Closed Window Tfow Open Window First Open Window Closed Window Reset microcontroller DIAG Read MRDIAG0 DIAGS , WDTPO Register WAKE VMCRES Tmr Tcw Tcw Tcw Tfow Twt WDT Status Closed Window Open Window Closed Window Reset timing is too first DIAG First Open Window Reset microcontroller Read MRDIAG0 DIAGS , WDTPO Register Figure 7. Window Watchdog Timing www.onsemi.com 17 Closed Window LV8968BBUW Table 9. WINDOW WATCHDOG TIMING OPTIONS (TJ = −40 to 150 °C, VS = 4.5 to 40 V) Symbol TFOW TCW TWT TMR Min Typ Max Unit WDT first open window time WDTWT[2:0] = 0h WDTWT[2:0] = 1h : (1/2 step) WDTWT[2:0] = 7h Characteristic 390.0 195.0 : 3.0 409.6 204.8 : (1/2 step) 3.2 431.2 215.6 : 3.4 ms WDT closed window time WDTWT[2:0] = 0h WDTWT[2:0] = 1h : (1/2 step) WDTWT[2:0] = 7h 97.4 48.7 : 0.7 102.4 51.2 :(1/2 step) 0.8 107.8 53.9 : 0.9 ms WDT window time WDTWT[2:0] = 0h WDTWT[2:0] = 1h : (1/2 step) WDTWT[2:0] = 7h 195.0 97.4 : 1.4 204.8 102.4 :(1/2 step) 1.6 215.6 107.8 : 1.7 ms 333 400 422 ms WDT microcontroller reset time System Errors and Warnings case the LV8968BB will keep the output stage disabled until the latch is cleared by one of the following actions: • Power on reset • EN low • SPI write of FFh to MRRST Table 10 explains the error behaviour. ”Error” names the type of error that is covered. ”Reaction Settings Option” lists which options exists for this error and the corresponding register. ”Reaction names what happens if the error occurs. Some reactions depend on the ”Setting Options” and are described in Notes below. System errors and warnings are always flagged in their corresponding register MRDIAG0 and MRDIAG1 and their presence is indicated in SPI status register GSDAT. The LV8968BB gives great flexibility in modifying the error response. Error response definition can be backed up into OTP. All system errors and warnings can cause a transition on DIAG. The polarity of this transition is selected in bit DIAGPOL. DIAG should be connected to an interrupt input of the microcontroller. Errors that can cause serious damage such as short−circuit and over−current may be latched by enabling the corresponding latch bit in MRCONF7. In this Table 10. SYSTEM ERROR AND WARNING RESPONSE MATRIX Reaction Setting Options Reaction Setup Register Mask Error Report on DIAG Auto Recover Latch Off VG DRV VCC MC RES VS Under Voltage VSUVPS [1:0] Yes Yes Yes No ON (Note 5) ON H VS voltage recovers After OTP download VS Over Voltage VSOVPS [1:0] Yes Yes Yes No ON (Note 5) ON H VS voltage recovers After OTP download VDH Over Voltage VDOVPS [1:0] Yes Yes Yes No ON (Note 5) ON H VDH voltage recovers After OTP download VG Under Voltage VGUVPS [1:0] Yes Yes Yes No ON (Note 5) ON H VG voltage recovers After VG start−up time VCC Under Voltage − No No Yes No ON OFF ON L VCC voltage recovers After VCC start−up time Error www.onsemi.com 18 Recovery Condition Protection Enabled LV8968BBUW Table 10. SYSTEM ERROR AND WARNING RESPONSE MATRIX Reaction Setting Options 5. 6. 7. 8. Reaction Error Setup Register Mask Error Report on DIAG Auto Recover Latch Off VG DRV VCC MC RES Recovery Condition Over Current OCPS [1:0] Yes Yes Yes Yes ON (Note 5) ON H [Latch Off] EN = L or execute MRRST = Ffh command [Auto Recover] EN = L or after ecovery time [Report] EN = L or motor current is down EN = H (Normal mode) FET Short FSPS [1:0] Yes Yes Yes Yes ON (Note 5) ON H [Latch Off] EN = L or execute MRRST = FFh command [Auto Recover] EN = L or after recovery time [Report] EN = L or FET short current is down EN = H (Normal mode) Thermal Warning THWPS Yes Yes No No ON ON ON H Temperature is down After OTP download Thermal Shut Down THSPS Yes No Yes No (Note 6) (Note 6) (Note 6) (Note 7) Temperature is down After OTP download Watch Dog Timer WDTPS Yes No Yes No ON (Note 6) ON (Note 8) After output reset pulse from VMCRES pin VMCRES =H Protection Enabled Report or Ignore = ON, Latch Off or Auto Recover = OFF Ignore = ON, Auto Recover = OFF Ignore = H, Auto Recover = L Ignore = Fixed H, Auto Recover = Output L pulse SPI Interface In the LV8968BB the SPI Interface is used to perform general communications for status reporting, control and programming. CSB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SCLK SI WEN ADDR [6:0] WDAT [7:0] GSDAT [6:0] RDAT [7:0] (previous data) SO Hi-Z Figure 8. SPI Format in Write Mode www.onsemi.com 19 Hi-Z LV8968BBUW CSB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SCLK SI WEN ADDR [6:0] WDAT [7:0] (ignored) GSDAT [6:0] RDAT [7:0] SO Hi-Z Hi-Z Figure 9. SPI Format in Read Mode • It is important the system master have the clock and SPI communications with the LV8968BB follows established industry standard practices including the use of WEN and start and stop bits as shown above. Data is transferred MSB first and both clock and data are transferred as ’true’ data with the higher level indicating a logical 1 or true state. There are two items to be especially careful of with the general communication scheme: • Communications must be full duplex and simultaneous. It is not allowed to send one transaction and then read data on a second transaction as the status register information will be updated on the first transaction and then be out of date for the second. Some systems break transactions into separate read and write operations which is not acceptable data polarities and phases as shown above. Both the clock and data on some systems can be inverted for various reasons but must arrive at the LV8968BB per the above drawing. Common errors include SCLK inversion such that the leading edge arrives as a downward transition rather than a rising edge, or having the data to clock phase incorrect. Data phase must be such that the data only changes during a clock falling edge and is completely stable during a clock rising edge. This means a good margin of one half a bit time exists to eliminate transmission delay hazards. The first byte returned on all transactions is always the status register GSDAT, and contains information such as the busy flag during programming operations Table 11. GSDAT[7:0] Bit 7 6 5 4 3 2 0 ORBEN SACF DIAGS LATCH OBSY NA NA NA NA NA NA NA NA Sleep mode NA NA NA NA NA NA 0 1 Device start up time NA NA NA NA NA NA 1 0 Standby mode NA NA NA NA NA NA 1 1 Normal mode NA 0 0 0 0 0 NA NA Normal Operation NA NA NA NA NA 1 NA NA OTP download of default values NA NA NA NA 1 NA NA NA Latched shutdown condition NA NA NA 1 NA NA NA NA Failure Condition NA NA 1 NA NA NA NA NA Last SPI access failed* NA 1 NA NA NA NA NA NA OTP integrity test mode www.onsemi.com 20 1 Bit 0 SMOD[1:0] LV8968BBUW The following SPI failures are detectable and reported collectively by a high on SACF in GSDAT[5] as general SPI failures: ♦ Any access to an address which is not assigned. ♦ The number of SCLK edges is not 16 within one word transfer ♦ Any access to MRCONF and ORCONF while OBSY = 1, (During write operations) ♦ Write access to MRODL register while OBSY = 1, (during write operations) ♦ Write access to any of the main registers after setting MSAENB = 1 (Implies Reg. address 04 h to 07 h are locked) ♦ ♦ ♦ ♦ Write access to any of the OTP registers after OSAENB = 1 (Implies Reg. address 40 h to 43 h are locked) Write access attempt to a read only or locked register SI signal changed at positive edge of SCLK (Incorrect data/sclk phase setup) Write access to dead−time register FDTI while FDTIBSY is still high (last value has not been uploaded) www.onsemi.com 21 LV8968BBUW SPI Timing 90% CSB 10% 10% Tcss SCLK 1/Tfck 10% Tckn 10% Tcssod Tsis 90% 10% 10% Tckp Tcsh 90% 90% 10% 90% 90% Tcsp Tsih 90% 90% SI 10% 10% Tcksod Tcssoo SO Tcssoz 90% 10% 10% Figure 10. SPI Timing Diagram Table 12. SPI TIMING (TJ = −40 to 150°C, VS = 4.5 to 40 V, SO load = 50 pF) Symbol Comment Min Typ Max Unit 4.5 MHz TFCK SCLK Clock Frequency TCKP SCLK High Pulse Width 90 ns TCKN SCLK Low Pulse Width 90 ns TCSS CSB Setup Time 90 ns TCSH CSB Hold Time 0 ns TCSP CSB High Pulse Width 90 ns TSIS SI Setup Time 45 ns TSIH SI Hold Time 45 ns TCKSOD SCLK Fall Edge to SO Delay Time 75 ns TCSSOD CSB Fall Edge to SO Delay Time 75 ns TCSSOO CSB Fall Edge to SO Data Out Time TCSSOZ CSB Rise Edge to SO Hi−Z Out Time 0 ns 75 ns NOTE: SPI−Interface can be used after the data download of the OTP has been completed. However it can not be used during VMCRES = L. transition). This operation takes up to 125 ms. A high OBSY flag in the first returned byte during a SPI transaction indicates this. OTP Programming The OTP register data is typically transferred into the main registers at device startup (From sleep to standby POR Ready Download Data WAKE OBSY Figure 11. OTP Data Download Timing at Startup access (MRCONF0 ~ 3, ORCONF0 ~ 3, MRODL) until the OBSY flag is cleared. An OTP download can also actively be initiated by writing 00h to register MRODL. This command requires monitoring the OBSY flag. Don’t perform specific register www.onsemi.com 22 MRORB, LV8968BBUW Write MRODL Register OBSY Download Data Figure 12. OTP Data Download Timing after an MRODL Command OTP Programming Overall Figure 13 shows overall of the OTP memory write and verify flow. It consists of preparation, write and three times of data integrity verification. START Set LV8968BB standby Apply VS> 14V Write Data Set mode to L side read check Verify Set mode to H side read check Verify Set mode to Normal Verify END Figure 13. OTP Memory Write and Verify Flow The OBSY flag will be reset at the end of the write cycle. OBSY is in GSDAT register. To get GSDAT, SPI accesses to the register MRACK is recommended. MRACK doesn’t interfere with the programming operation. MRCONF0 ~ 3, ORCONF0 ~ 3, MRORB, MRODL registers cannot be accessed during an OTP write cycle. OTP Programming The OTP registers can be programmed in Standby mode only while the write lock bit OSAENB is set 0. And, the supply voltage at pin VS must be more than 14 V. The actual write operation to the OTP memory will be done, when the state change from 0 to 1 is commanded. Once the bit state is changed to 1, it cannot be change back to 0. The number of writing is limited to one per bit. www.onsemi.com 23 LV8968BBUW Write OTP Data OBSY Internal Write Time Figure 14. OTP Programming Timing The programming takes 4 ms maximum. To simplify operation, a waiting for 4 ms plus margin can be applicable instead of a polling of the flag OBSY. (Figure 15) START WRITE DATA Write data to address 40h Wait for 4 ms or more Write data to address 41h Wait for 4 ms or more Write data to address 42h Wait for 4 ms or more Write data to address 43h Wait for 4 ms or more END Figure 15. OTP Memory Write and Verify Flow 3. Verify that the main register contents are consistent with the programmed OTP data 4. Set OTP readout threshold “high” by setting ORBEN = 1 and ORBLV = 1 in register MRORB 5. Execute OTP download command by writing 00h to MRODL 6. Verify that the main register contents are consistent with the programmed OTP data 7. Return OTP threshold to normal by setting ORBEN = 0 and ORBLV = 0 8. Execute OTP download command 9. Verify that the main register contents are consistent with the programmed OTP data OTP Data Integrity Verification In order to verify that the OTP programming operation was successful. It is strongly recommended to do an OTP margin check: To do this, the OTP registers are downloaded into the main register bank with minimum and maximum readout thresholds. This OTP download is forced by writing 00h to register MRODL. The readout threshold is set in register MRORB. OTP Margin read check sequence after programmed: 1. Set OTP readout threshold “low” by setting ORBEN = 1 and ORBLV = 0 in register MRORB 2. Execute OTP download command by writing 00h to MRODL www.onsemi.com 24 LV8968BBUW Locking OTP Register Contents MSAENB bit and OSAENB bit are used in order to prevent write−access of main− and OTP registers respectively. CAUTION: Inadvertent writing of these bits will permanently lock the corresponding register blocks from any further write access. Should only be set at end of development cycles. Table 13. REGISTER MAP WENB WTIM Always NG Always NG OSAENB (Note 9) EN=L ADDR [6:0] Data Name D[7] D[6] − GSDAT 0 ORBEN SACF DIAGS LATCH OBSY 00h MRCONF0 0 0 THTSEL DFCSEL DIAGLTO DIAGPOL 01h MRCONF1 0 0 0 WDTPS THSPS THWPS 02h MRCONF2 0 0 0 D[5] D[4] D[3] VDOVPS[1:0] Read Only 03h MRCONF3 0 MSAENB (Note 9) EN=L 04h MRCONF4 0 05h MRCONF5 0 0 06h MRCONF6 0 0 0 07h MRCONF7 08h MRCONF8 0 0 0 0 0 10h MRAOSEL 0 0 0 0 0 0 Always OK Always OK EN=L Read Only OSAENB (Note 9) Read Only EN=L 0 WDTWT[2:0] D[0] SMOD[1:0] VGVSEL VCVSEL VGUVPS[1:0] VSUVPS[1:0] 0 0 0 CSOFEN OCDL[1:0] FSPS[1:0] D[1] VSOVPS[1:0] Read Only Always OK 0 D[2] 0 OSAENB AWODLEN D3MDEN OCMASK[3:0] 0 FSFT[1:0] FSDT[1:0] OCPS[1:0] FDTILIM[3:0] 0 0 MSAENB AOUTSEL[2:0] (Default=7h) 11h MRCSG 0 0 0 0 12h MRFSDL 0 0 0 0 0 FSDL[3:0] 13h MRFDTI 0 0 0 0 FDTI[3:0] 14h MRFDTIF 0 0 0 0 15h MRRST 16h MRORB 17h MRODL 20h MRDIAG0 0 0 0 WDTPO 21h MRDIAG1 0 0 0 22h MRACK 0 1 0 40h ORCONF0 THTSEL 41h ORCONF1 42h ORCONF2 43h ORCONF3 0 CSGAIN[1:0] 0 0 FDTIBSY 0 ORBEN ORBLV THSPO THWPO FSPO OCPO VCUVPO VGUVPO VDOVPO VSOVPO VSUVPO 1 0 1 0 1 DFCSEL DIAGLTO DIAGPOL VGVSEL VCVSEL WDTPS THSPS THWPS Write 00h: Reset WDT / Write FFh: Reset latch off 0 0 0 0 0 Write 00h: Execute OTP data download ORCONF0[7:6] ORCONF1[7:5] ORCONF2[7:6] VDOVPS[1:0] ORCONF3[7:1] NOTE: SPI access to addresses not listed here will result in an SPI access failure error (SACF). 9. At Test mode, ENB = 1 setting is ignored. www.onsemi.com 25 VSOVPS[1:0] VGUVPS[1:0] VSUVPS[1:0] OSAENB LV8968BBUW MRCONF0 (Default: 00h) (Write Access Only when EN = Low. OTP Backup Possible) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 00h MRCONF0 0 0 THTSEL DFCSEL DIAGLTO DIAGPOL VGVSEL VCVSEL THTSEL Temperature warning threshold and error selection. ♦ THTSEL = 0: Thermal warning = 125°C, Thermal shut down = 150°C ♦ THTSEL = 1: Thermal warning = 150°C, Thermal shut down = 175°C DFCSEL Defines the condition under which the error registers are reset, by error condition removed only, or by error condition removed and subsequent SPI read access of the register in question. ♦ DFCSEL = 0: If error was cleared, DIAGS flag of GSDAT and MRDIAG0, 1 flag are reset by MRDIAG0, 1 read ♦ DFCSEL = 1: DIAGS flag of GSDAT and MRDIAG0,1 flag are reset by recovery condition DIAGLTO If this bit is set, only latched errors result in a transition on DIAG. Otherwise all errors (and warnings) will be flagged. ♦ DIAGLTO = 0: At the time of detecting auto recover or latch off error, DIAG output is on ♦ DIAGLTO = 1: At the time of detecting latch off error, DIAG output is on DIAGPOL Decides the polarity of the DIAG output. ♦ DIAGPOL = 0: At the time of detecting diagnostic error, DIAG output is L ♦ DIAGPOL = 1: At the time of detecting diagnostic error, DIAG output is H VGVSEL Selects if the IC is in logic level mode or normal mode which modifies the gate voltage of the drive section. ♦ VGVSEL = 0: VG normal mode (VG = 11 V) ♦ VGVSEL = 1: VG logic level mode (VG = 6 V) VCVSEL Selects the output voltage of VCC to be either 3.3 V or 5 V. The wrong bit selection has a possibility to damage the microcontroller. Please make sure the appropriate selection. ♦ VCVSEL = 0: VCC = 3.3 V ♦ VCVSEL = 1: VCC = 5.0 V MRCONF1 (Default: 00h) (Write Access Only when EN = Low. OTP Backup Possible) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] 01h MRCONF1 0 0 0 WDTPS THSPS THWPS WDTPS Watchdog error results in error response or is ignored. ♦ WDTPS = 0: Ignore WDT error ♦ WDTPS = 1: Emergency off and report a WDT error (Auto recover) THSPS Thermal shutdown error results in error response or is ignored. ♦ THSPS = 0: Ignore thermal shut down error ♦ THSPS = 1: Emergency off and report at thermal shut down error (Auto recover) THWPS ♦ THWPS = 0: Ignore thermal warning error ♦ THWPS = 1: Report thermal warning error www.onsemi.com 26 D[1] D[0] VGUVPS[1:0] LV8968BBUW VGUVPS[1:0] ♦ VGUVPS[1:0] = 0h: Ignore VG under voltage error ♦ VGUVPS[1:0] = 1h: Report VG under voltage error ♦ VGUVPS[1:0] = 2h, 3h: Emergency off and report at VG under voltage error (Auto recover) MRCONF2 (Default: 00h) (Write Access Only when EN = Low. OTP Backup Possible) ADDR Data Name D[7] D[6] 02h MRCONF2 0 0 D[5] D[4] VDOVPS[1:0] D[3] D[2] VSOVPS[1:0] D[1] D[0] VSUVPS[1:0] VDOVPS[1:0] ♦ VDOVPS[1:0] = 0h: Ignore VDH over voltage error ♦ VDOVPS[1:0] = 1h: Report VDH over voltage error ♦ VDOVPS[1:0] = 2h, 3h: Emergency off and report at VDH over voltage error (Auto recover) VSOVPS[1:0] ♦ VSOVPS[1:0] = 0h: Ignore VS over voltage error ♦ VSOVPS[1:0] = 1h: Report VS over voltage error ♦ VSOVPS[1:0] = 2h, 3h: Emergency off and report at VS over voltage error (Auto recover) VSUVPS[1:0] ♦ VSUVPS[1:0] = 0h: Ignore VS under voltage error ♦ VSUVPS[1:0] = 1h: Report VS under voltage error ♦ VSUVPS[1:0] = 2h, 3h: Emergency off and report at VS under voltage error (Auto recover) MRCONF3 (Default: 00h) (Read Only) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 03h MRCONF3 0 0 0 0 0 0 0 OSAENB OSAENB Setting this bit disables all write access to the configuration registers MRCONF0, MRCONF1 and MRCONF2 and the OTP backup register. Set to prevent system parameters from being modified. ♦ OSAENB = 0: Enable write access of MRCONF0~2 and ORCONF0~3 ♦ OSAENB = 1: Disable write access of MRCONF0~2 and ORCONF0~3 www.onsemi.com 27 LV8968BBUW MRCONF4 (Default: 00h) (Write Access Only when EN = Low) ADDR Data Name D[7] 04h MRCONF4 0 D[6] D[5] D[4] D[3] D[2] D[1] D[0] 0 CSOFEN AWODLEN D3MDEN WDTWT[2:0] WDTWT[2:0] Defines the watchdog timer window sizes. ♦ WDTWT[2:0] = 0h: TFOW = 409.6 ms, TCW = 102.4 ms, TWT = 204.8 ms ♦ WDTWT[2:0]=1h: TFOW = 204.8 ms, TCW = 51.2 ms, TWT = 102.4 ms : : (1/2 step) : ♦ WDTWT[2:0] = 7h: TFOW = 3.2 ms, TCW = 0.8 ms, TWT = 1.6 ms CSOFEN Selects the offset of the current sense amplifier. ♦ CSOFEN = 0: Current sense amp offset = 1.5 V ♦ CSOFEN = 1: Current sense amp offset = 0.2 V AWODLEN Periodical (200 ms) OTP download during EN = H. ♦ AWODLEN = 0: Not download OTP data in normal mode ♦ AWODLEN = 1: Download OTP data periodically in normal mode D3MDEN Chooses how the output drivers are addressed, with six PWM channels, or with three PWM channels and three enables. ♦ D3MDEN = 0: Drive 6 mode ♦ D3MDEN = 1: Drive 3 mode MRCONF5 (Default: 00h) (Write Access Only when EN = Low) ADDR Data Name D[7] D[6] 05h MRCONF5 0 0 D[5] D[4] D[3] OCDL[1:0] OCDL[1:0] Defines the over−current detection threshold voltage between ISN and ISP. ♦ OCDL[1:0] = 0h: Over−current detect level = 200 mV ♦ OCDL[1:0] = 1h: Over−current detect level = 150 mV ♦ OCDL[1:0] = 2h, 3h: Over−current detect level = 100 mV OCMASK[3:0] Masking time for the over−current detection after every output transition. ♦ OCMASK[3:0] = 0h: Over−current mask time = 0.2 ms ♦ OCMASK[3:0] = 1h: Over−current mask time = 0.4 ms : : (0.2 ms step) : ♦ OCMASK[3:0] = Eh: Over−current mask time = 3.0 ms ♦ OCMASK[3:0] = Fh: Over−current mask time = 3.2 ms www.onsemi.com 28 D[2] D[1] OCMASK[3:0] D[0] LV8968BBUW MRCONF6 (Default: 00h) (Write Access Only when EN = Low) ADDR Data Name D[7] D[6] D[5] D[4] 06h MRCONF6 0 0 0 0 D[3] D[2] D[1] FSFT[1:0] D[0] FSDT[1:0] FSFT[1:0] External FET short detection debounce time. A short condition hast to remain valid during this time. ♦ FSFT[1:0] = 0h: FET short detect time = 0.8 ms ♦ FSFT[1:0] = 1h: FET short detect time = 1.6 ms ♦ FSFT[1:0] = 2h: FET short detect time = 2.4 ms ♦ FSFT[1:0] = 3h: FET short detect time = 3.2 ms FSDT[1:0] External FET short circuit detection masking time, starts after turn−on of the FET. ♦ FSDT[1:0] = 0h: FET short masking time = 3.2 ms ♦ FSDT[1:0] = 1h: FET short masking time = 6.4 ms ♦ FSDT[1:0] = 2h: FET short masking time = 9.6 ms ♦ FSDT[1:0] = 3h: FET short masking time = 12.8 ms MRCONF7 (Default: 00h) (Write Access Only when EN = Low) ADDR Data Name 07h MRCONF7 D[7] D[6] FSPS[1:0] D[5] D[4] D[3] OCPS[1:0] FSPS[1:0] Short circuit error decision mask. ♦ FSPS[1:0] = 0h: Ignore FET short error ♦ FSPS[1:0] = 1h: Report FET short error ♦ FSPS[1:0] = 2h: Emergency off and report at FET short error (Auto recover) ♦ FSPS[1:0] = 3h: Emergency off and report at FET short error (Latched off) OCPS[1:0] Over−current error decision mask. ♦ OCPS[1:0] = 0h: Ignore over−current error ♦ OCPS[1:0] = 1h: Report over−current error ♦ OCPS[1:0] = 2h: Emergency off and report at over−current error (Auto recover) ♦ OCPS[1:0] = 3h: Emergency off and report at over−current error (Latched off) FDTILIM[3:0] Minimum Dead time programming register. ♦ FDTILIM[3:0] = 0h: FET dead time = 3.2 ms ♦ FDTILIM[3:0] = 1h: FET dead time = 3.0 ms : : (−0.2 ms step) : ♦ FDTILIM[3:0] = Eh: FET dead time = 0.4 ms ♦ FDTILIM[3:0] = Fh: FET dead time = 0.2 ms www.onsemi.com 29 D[2] D[1] FDTILIM[3:0] D[0] LV8968BBUW MRCONF8 (Default: 00h) (Write access only when EN = Low) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 08h MRCONF8 0 0 0 0 0 0 0 MSAENB D[1] D[0] MSAENB Setting this bit disables all write access to the configuration registers MRCONF4 to MRCONF7. ♦ MSAENB = 0: Enable write access of MRCONF4 ~ 7 ♦ MSAENB = 1: Disable write access of MRCONF4 ~ 7 MRAOSEL (Default: 07h) (Full Dynamic Access) ADDR Data Name D[7] D[6] D[5] D[4] D[3] 10h MRAOSEL 0 0 0 0 0 D[2] AOUTSEL[2:0] AOUTSEL[2:0] Select the internal nodes brought out on AOUT. ♦ AOUTSEL[2:0] = 0h: AOUT = Output VDH voltage level ♦ AOUTSEL[2:0] = 1h: AOUT = Output SH1 voltage level ♦ AOUTSEL[2:0] = 2h: AOUT = Output SH2 voltage level ♦ AOUTSEL[2:0] = 3h: AOUT = Output SH3 voltage level ♦ AOUTSEL[2:0] = 4h, 5h: AOUT = Output thermal monitor voltage level ♦ AOUTSEL[2:0] = 6h, 7h: AOUT = Hi−Z MRCSG (Default: 00h) (Full Dynamic Access) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] 11h MRCSG 0 0 0 0 0 0 D[3] D[2] D[1] D[0] CSGAIN[1:0] CSGAIN[1:0] Programs the gain of the current sense amplifier. ♦ CSGAIN[1:0] = 0h: Current sense amp gain = 7.5 ♦ CSGAIN[1:0] = 1h: Current sense amp gain = 15 ♦ CSGAIN[1:0] = 2h: Current sense amp gain = 22.5 ♦ CSGAIN[1:0] = 3h: Current sense amp gain = 30 MRFSDL (Default: 00h) (Full Dynamic Access) ADDR Data Name D[7] D[6] D[5] D[4] 12h MRFSDL 0 0 0 0 FSDL[3:0] Defines the maximum allowable drain source voltage across a power FET. ♦ FSDL[3:0] = 0h: FET short detect level = 100 mV ♦ FSDL[3:0] = 1h: FET short detect level = 200 mV : : (100 mV step) : ♦ FSDL[3:0] = Eh: FET short detect level = 1500 mV ♦ FSDL[3:0] = Fh: FET short detect level = 1600 mV www.onsemi.com 30 D[1] FSDL[3:0] D[0] LV8968BBUW MRFDTI (Default: 00h) (Full Dynamic Access) ADDR Data Name D[7] D[6] D[5] D[4] 13h MRFDTI 0 0 0 0 D[3] D[2] D[1] D[0] FDTI[3:0] FDTI[3:0] Dead time programming register. This dead time will be applied unless it is smaller than FDTILIM[3:0] in MRCONF7. ♦ FDTI[3:0] = 0h: FET dead time = 3.2 ms ♦ FDTI[3:0] = 1h: FET dead time = 3.0 ms : : (−0.2 ms step) : ♦ FDTI[3:0] = Eh: FET dead time = 0.4 ms ♦ FDTI[3:0] = Fh: FET dead time = 0.2 ms MRFDTIF (Default: 00h) (Full Dynamic Access) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 14h MRFDTIF 0 0 0 0 0 0 0 FDTIBSY FDTIBSY FDTIBSY goes high after the dead−time register was written to via SPI but not uploaded into the dead−time counter. Upload happens at the beginning of every dead time measuring period (falling edge of a gate signal) and clears the FDTIBSY flag. A write access MRFDTIF = 01h also clears the FDTIBSY flag. MRRST (Full Dynamic Access) ADDR Data Name 15h MRRST D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] Write 00h: Reset WDT / Write FFh: Reset latch off MRRST[7:0] Write access to this register resets the Watchdog or the Error latch. ♦ Write MRRST[7:0] = 00h: Reset WDT ♦ Write MRRST[7:0] = FFh: Reset latch off MRORB (Default: 00h) (Register for OTP Programming Integrity Check. Write During EN = Low Only) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 16h MRORB 0 0 0 0 0 0 ORBEN ORBLV ORBEN Setting this bit puts the device into OTP integrity check mode. ♦ ORBEN = 0: Normal ♦ ORBEN = 1: OTP bias read mode ORBLV Changes the OTP readout thresholds to high and low, to verify data integrity. ♦ ORBLV = 0: OTP low bias read mode at ORBEN = 1 ♦ ORBLV = 1: OTP high bias read mode at ORBEN = 1 www.onsemi.com 31 LV8968BBUW MRODL (Write Access During EN = Low Only) ADDR Data Name 17h MRODL D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] Write 00h: Execute OTP data download MRODL[7:0] A write initiates an OTP data download into the main registers in standby mode. In Normal mode, OTP download can be initiated only when AWODLEN is set regardless of MRODL. ♦ Write MRODL[7:0] = 00h: Execute OTP data download MRDIAG0 (Read Only) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 20h MRDIAG0 0 0 0 WDTPO THSPO THWPO FSPO OCPO WDTPO Watchdog error flag. ♦ WDTPO = 0: Normal ♦ WDTPO = 1: Detect WDT error THSPO Over temperature shutoff flag. ♦ THSPO = 0: Normal ♦ THSPO = 1: Detect thermal shut down error THWPO Thermal warning flag. ♦ THWPO = 0: Normal ♦ THWPO = 1: Detect thermal warning error FSPO FET short circuit detection flag. ♦ FSPO = 0: Normal ♦ FSPO = 1: Detect FET short error OCPO Over−current error flag. ♦ OCPO = 0: Normal ♦ OCPO = 1: Detect over−current error MRDIAG1 (Read Only) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 21h MRDIAG1 0 0 0 VCUVPO VGUVPO VDOVPO VSOVPO VSUVPO VCUVPO VCC under−voltage flag. ♦ VCUVPO = 0: Normal ♦ VCUVPO = 1: Detect VCC under voltage error VGUVPO VG under−voltage flag. ♦ VGUVPO = 0: Normal ♦ VGUVPO = 1: Detect VG under voltage error www.onsemi.com 32 LV8968BBUW VDOVPO VDH over−voltage flag. ♦ VDOVPO = 0: Normal ♦ VDOVPO = 1: Detect VDH over voltage error VSOVPO VS over−voltage flag. ♦ VSOVPO = 0: Normal ♦ VSOVPO = 1: Detect VS over voltage error VSUVPO VS under−voltage flag. ♦ VSUVPO = 0: Normal ♦ VSUVPO = 1: Detect VS under voltage error MRACK (Read Only) ADDR Data Name D[7] D[6] D[5] D[4] D[3] D[2] D[1] D[0] 22h MRACK 0 1 0 1 0 1 0 1 MRACK[7:0] For SPI data verification. A read must result in 55h. ♦ MRACK[7:0] read data is fixed 55h ORCONF0 ~ 3 (Default: 00h) (OTP Backup for Critical System Registers. Programmable During EN = L Only) ADDR Data Name D[7] D[6] 40h ORCONF0 ORCONF0[7:6] 41h ORCONF1 42h ORCONF2 43h ORCONF3 D[5] D[4] D[3] D[2] D[1] D[0] THTSEL DFCSEL DIAGLTO DIAGPOL VGVSEL VCVSEL WDTPS THSPS THWPS ORCONF1[7:5] ORCONF2[7:6] VDOVPS[1:0] VSOVPS[1:0] VGUVPS[1:0] VSUVPS[1:0] ORCONF3[7:1] ORCONF0 ~ 3 ♦ ORCONF0 ~ 3 data is transferred to MRCONF0 ~ 3 at OTP data download ♦ ORCONF0[7:6], ORCONF1[7:5], ORCONF2[7:6], ORCONF3[7:1] data is not transferred to MRCONF www.onsemi.com 33 OSAENB MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SPQFP48 7x7 / SQFP48K CASE 131AN ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON78439F SPQFP48 7X7 / SQFP48K DATE 08 NOV 2013 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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