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MBD101

MBD101

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO-226-2

  • 描述:

    DIODE SCHTTKY 7V LW NOISE TO92-2

  • 数据手册
  • 价格&库存
MBD101 数据手册
MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features http://onsemi.com • • • • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA Pb−Free Packages are Available SILICON SCHOTTKY BARRIER DIODES MARKING DIAGRAMS TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE MBD 101 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 Derate above 25°C MBD101 MMBD101LT1 TJ Tstg Symbol VR PF 280 225 2.2 1.8 +150 −55 to +150 mW mW/°C °C °C 1 2 3 Value 7.0 Unit V Junction Temperature Storage Temperature Range SOT−23 (TO−236) CASE 318 STYLE 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4M M G G 1 3 CATHODE 1 ANODE (Pin 2 Not Connected) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1, page 2) Forward Voltage (IF = 10 mA) Reverse Leakage (VR = 3.0 V) Symbol V(BR)R CD Min 7.0 − Typ 10 0.88 Max − 1.0 Unit V pF A = Assembly Location Y = Year WW = Work Week 4M = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. VF IR − − 0.5 0.02 0.6 0.25 V ORDERING INFORMATION mA Device MBD101 MBD101G MMBD101LT1 MMBD101LT1G Package TO−92 TO−92 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping † 5000 Units / Box 5000 Units / Box 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 1 March, 2007 − Rev. 3 Publication Order Number: MBD101/D MBD101, MMBD101LT1 TYPICAL CHARACTERISTICS (TA = 25°C unless noted) 1.0 0.7 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( m A) 0.5 0.2 0.1 0.07 0.05 0.02 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) VR = 3.0 V 100 TA = 85°C 10 TA = −40°C 1.0 TA = 25°C Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) C , CAPACITANCE (pF) D NF, NOISE FIGURE (dB) 0 1.0 2.0 3.0 4.0 0.9 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.8 0.7 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS Note 1 — CD is measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 — LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit http://onsemi.com 2 MBD101, MMBD101LT1 PACKAGE DIMENSIONS TO−92 TWO LEAD TO−226AC CASE 182−06 ISSUE L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. SEATING PLANE R D P L K J XX D G H V C N SECTION X−X DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− 1 2 N http://onsemi.com 3 ÉÉ ÉÉ STYLE 1: PIN 1. ANODE 2. CATHODE MBD101, MMBD101LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c b e q 0.25 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MBD101/D
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